IPB80N06S2L06ATMA2 [INFINEON]
Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN;
| 型号： | IPB80N06S2L06ATMA2 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN ATM 异步传输模式 PC 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB80N06S2L-06
IPP80N06S2L-06
OptiMOS® Power-Transistor
Product Summary
Features
VDS
55
6.3
80
V
• N-channel Logic Level - Enhancement mode
R
DS(on),max (SMD version)
mΩ
A
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
I D
PG-TO263-3-2
PG-TO220-3-1
• 100% Avalanche tested
Type
Package
Ordering Code Marking
IPB80N06S2L-06
IPP80N06S2L-06
PG-TO263-3-2
PG-TO220-3-1
SP0002-18163
SP0002-18824
2N06L06
2N06L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25 °C, VGS=10 V
T C=100 °C,
80
80
A
V
GS=10 V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Gate source voltage4)
I D,pulse
EAS
T C=25 °C
I D= 80 A
320
530
mJ
V
VGS
±20
Ptot
T C=25 °C
Power dissipation
250
W
°C
T j, T stg
Operating and storage temperature
-55 ... +175
Rev. 1.0
page 1
2006-03-13
IPB80N06S2L-06
IPP80N06S2L-06
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
0.6
62
K/W
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area5)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0 V, I D= 1 mA
Drain-source breakdown voltage
Gate threshold voltage
55
-
-
V
DS=VGS, I D=180 µA
1.2
1.6
2.0
V
DS=55 V, VGS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.01
1
1
µA
T j=25 °C
V
DS=55 V, VGS=0 V,
100
T j=125 °C2)
I GSS
V
V
GS=20 V, VDS=0 V
GS=4.5 V, I D=69 A
Gate-source leakage current
-
-
1
100 nA
R DS(on)
Drain-source on-state resistance
6.1
8.4
8.1
6.3
6
mΩ
V
GS=4.5 V, I D=69 A,
-
-
-
5.8
6.1
4.8
SMD version
RDS(on)
V
GS=10 V, I D=69 A,
Drain-source on-state resistance
mΩ
V
GS=10 V, I D=69 A,
SMD version
Rev. 1.0
page 2
2006-03-13
IPB80N06S2L-06
IPP80N06S2L-06
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
3800
890
240
11
-
-
-
-
-
-
-
pF
ns
V
GS=0 V, VDS=25 V,
f =1 MHz
21
V
DD=30 V, VGS=10 V,
I D=80 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
60
20
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
13
38
17
60
150
-
nC
Q gd
V
V
DD=44 V, I D=80 A,
GS=0 to 10 V
Q g
114
3.5
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
80
T C=25 °C
I S,pulse
320
V
GS=0 V, I F=80 A,
VSD
Diode forward voltage
Reverse recovery time2)
Reverse recovery charge2)
-
-
-
0.9
60
92
1.3
76
V
T j=25 °C
VR=30 V, I F=I S,
diF/dt =100 A/µs
t rr
ns
Q rr
115 nC
1) Current is limited by bondwire; with an R thJC = 0.6 K/W the chip is able to carry 138 A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) See diagram 13
4) Qualified at -20V and +20V.
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-13
IPB80N06S2L-06
IPP80N06S2L-06
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS ≥ 4 V
I D = f(T C); VGS ≥ 10 V
300
250
200
150
100
50
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
Z
parameter: D =t p/T
100
1000
100
10
0.5
1 µs
10 µs
100 µs
10-1
0.1
1 ms
0.05
10-2
0.01
single pulse
10-3
1
10-7
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t p [s]
V
DS [V]
Rev. 1.0
page 4
2006-03-13
IPB80N06S2L-06
IPP80N06S2L-06
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
DS(on) = (I D); T j = 25 °C
R
parameter: VGS
300
16
10 V
3 V
3.5 V
14
12
10
8
250
200
150
100
50
4 V
4 V
3.5 V
4.5 V
6
10 V
3 V
4
2.5 V
0
2
0
2
4
6
8
10
0
20
40
60
80
100
120
I
D [A]
V
DS [V]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. Forward transconductance
g fs = f(I D); T j = 25°C
parameter: g fs
200
180
160
140
120
100
80
250
200
150
100
50
60
40
175 °C
20
25 °C
-55 °C
0
0
1
2
3
4
0
50
100
150
200
I
D [A]
V
GS [V]
Rev. 1.0
page 5
2006-03-13
IPB80N06S2L-06
IPP80N06S2L-06
9 Typ. Drain-source on-state resistance
DS(ON) = f(T j)
10 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
R
V
parameter: I D = 80 A; VGS = 10 V
parameter: I D
12
2.5
10
8
2
1.5
1
900 µA
180 µA
6
4
0.5
2
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Typical forward diode characteristicis
C = f(VDS); VGS = 0 V; f = 1 MHz
IF = f(VSD)
parameter: T j
104
103
Ciss
102
Coss
103
25 °C
175 °C
101
Crss
102
100
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
DS [V]
V
SD [V]
Rev. 1.0
page 6
2006-03-13
IPB80N06S2L-06
IPP80N06S2L-06
13 Typical avalanche energy
AS = f(T j)
14 Typ. gate charge
E
V
GS = f(Q gate); I D = 80 A pulsed
parameter: I D
900
12
10
8
50 A
800
44 V
11 V
700
60 A
600
80 A
500
6
400
300
200
100
4
2
0
0
0
50
100
150
200
0
20
40
60
80
100
120
140
T j [°C]
Q gate [nC]
15 Typ. drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS) = f(T j); I D = 1 mA
66
64
62
60
58
56
54
52
50
48
46
VGS
Qg
Qgate
Qgd
Qgs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.0
page 7
2006-03-13
IPB80N06S2L-06
IPP80N06S2L-06
Published by
Infineon Technologies AG
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2006-03-13
相关型号：
IPB80N06S2L07ATMA1
Power Field-Effect Transistor, 80A I(D), 55V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
IPB80N06S2L07ATMA3
Power Field-Effect Transistor, 80A I(D), 55V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
IPB80N06S2L11ATMA2
Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
IPB80N06S2LH5ATMA1
Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
IPB80N06S2LH5ATMA4
Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN
INFINEON
IPB80N06S2LH5XT
Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明