IPB80P04P407ATMA1 [INFINEON]
Power Field-Effect Transistor, 80A I(D), 40V, 0.0077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN;
| 型号： | IPB80P04P407ATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 80A I(D), 40V, 0.0077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN ATM 异步传输模式 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB80P04P4-07
IPI80P04P4-07, IPP80P04P4-07
OptiMOS®-P2 Power-Transistor
Product Summary
V DS
-40
7.4
-80
V
R DS(on) (SMD Version)
mW
A
I D
Features
• P-channel - Normal Level - Enhancement mode
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
4P0407
4P0407
4P0407
IPB80P04P4-07
IPI80P04P4-07
IPP80P04P4-07
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C,
V GS=-10V
Continuous drain current1)
I D
-80
A
T C=100°C,
V GS=-10V2)
62
Pulsed drain current2)
I D,pulse
E AS
I AS
T C=25°C
-320
31
I D=-40A
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
mJ
A
-
-80
V GS
P tot
-
±20
V
T C=25 °C
Power dissipation
88
W
°C
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.0
page 1
2011-02-14
IPB80P04P4-07
IPI80P04P4-07, IPP80P04P4-07
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
-
-
1.7
62
K/W
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0V, I D= -1mA
V GS(th) V DS=V GS, I D=-150µA
Drain-source breakdown voltage
Gate threshold voltage
-40
-
-
V
-2.0
-3.0
-4.0
V DS=-32V, V GS=0V,
T j=25°C
I DSS
Zero gate voltage drain current
-
-
-0.05
-20
-1
µA
V DS=-32V, V GS=0V,
T j=125°C2)
-200
I GSS
V GS=-20V, V DS=0V
Gate-source leakage current
-
-
-
-100 nA
R DS(on) V GS=-10V, I D=-80A
Drain-source on-state resistance
5.7
7.7
7.4
mW
V GS=-10V, I D=-80A,
SMD version
-
5.4
Rev. 1.0
page 2
2011-02-14
IPB80P04P4-07
IPI80P04P4-07, IPP80P04P4-07
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
4681
1520
45
6085 pF
2280
V GS=0V, V DS=-25V,
f =1MHz
91
25
-
-
-
-
ns
V DD=-20V,
V GS=-10V, I D=-80A,
R G=3.5W
15
t d(off)
t f
Turn-off delay time
Fall time
34
41
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
25
13
33
26
89
-
nC
V DD=-32V,
I D=-80A,
V GS=0 to -10V
Q gd
Q g
68
V plateau
Gate plateau voltage
-5.4
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
-80
T C=25°C
I S,pulse
-320
V GS=0V, I F=-80A,
T j=25°C
V SD
Diode forward voltage
-
-1
-1.3
V
Reverse recovery time2)
t rr
-
-
48
54
-
-
ns
V R=-20V, I F=-50A,
di F/dt =-100A/µs
Reverse recovery charge2)
Q rr
nC
1) Current is limited by bondwire; with an R thJC = 1.7K/W the chip is able to carry -88A at 25°C.
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2011-02-14
IPB80P04P4-07
IPI80P04P4-07, IPP80P04P4-07
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≤ -6V
I D = f(T C); V GS ≤ -6V; SMD
100
80
60
40
20
0
100
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0; SMD
parameter: t p
parameter: D =t p/T
101
1000
1 µs
100
0.5
10 µs
100
100 µs
0.1
1 ms
10-1
0.05
0.01
10
10-2
single pulse
1
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t p [s]
-V DS [V]
Rev. 1.0
page 4
2011-02-14
IPB80P04P4-07
IPI80P04P4-07, IPP80P04P4-07
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C; SMD
parameter: V GS
30
320
-5.5V
-5V
-10V
27
24
21
18
15
12
9
-7V
240
160
80
-6.5V
-6V
-6V
-6.5V
-7V
-5.5V
-5V
6
-10V
3
0
0
0
40
-I D [A]
80
0
1
2
3
4
5
6
-V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = -6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = -80 A; V GS = -10 V; SMD
320
240
160
80
9
8
7
6
5
4
175 °C
25 °C
-55 °C
0
2
3
4
5
6
7
8
-60
-20
20
60
100
140
180
-V GS [V]
T j [°C]
Rev. 1.0
page 5
2011-02-14
IPB80P04P4-07
IPI80P04P4-07, IPP80P04P4-07
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
104
4
3.6
3.2
Ciss
Coss
103
102
101
-1500µA
2.8
-150µA
2.4
2
Crss
1.6
1.2
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
-V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD
12 Drain-source breakdown voltage
)
V BR(DSS) = f(T j); I D = -1 mA
parameter: T j
103
45
44
43
42
41
40
39
38
37
36
35
102
25 °C
175 °C
101
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-60
-20
20
60
100
140
180
-V SD [V]
T j [°C]
Rev. 1.0
page 6
2011-02-14
IPB80P04P4-07
IPI80P04P4-07, IPP80P04P4-07
15 Typ. gate charge
V GS = f(Q gate); I D = -80 A pulsed
parameter: V DD
16 Gate charge waveforms
12
10
8
VGS
-8V
Q g
-32V
6
4
Qgate
2
Qgd
Q gs
0
0
20
40
60
80
Q gate [nC]
Rev. 1.0
page 7
2011-02-14
IPB80P04P4-07
IPI80P04P4-07, IPP80P04P4-07
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2011
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2011-02-14
IPB80P04P4-07
IPI80P04P4-07, IPP80P04P4-07
Revision History
Version
Date
Changes
0.1
1.0
29.01.2010 Initial Target Data Sheet
10.02.2011 Final Data Sheet
Rev. 1.0
page 9
2011-02-14
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