IPB95R450PFD7 [INFINEON]

The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPB95R450PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPB95R450PFD7 in the TO-263 package features RDS(on) of 450 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. ;


型号：	IPB95R450PFD7
厂家：	Infineon
描述：	The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPB95R450PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPB95R450PFD7 in the TO-263 package features RDS(on) of 450 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device.
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中文：	中文翻译
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IPB95R450PFD7

MOSFET

D²PAK

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

Theꢀlatestꢀ950VꢀCoolMOS™ꢀPFD7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀthe

superꢀjunctionꢀ(SJ)ꢀtechnologies.ꢀThisꢀtechnologyꢀisꢀdesignedꢀtoꢀaddress

LightingꢀandꢀIndustrialꢀSMPSꢀapplicationsꢀbyꢀcombiningꢀbest-in-class

performanceꢀwithꢀstate-of-the-artꢀeaseꢀofꢀuse.ꢀComparedꢀtoꢀthe

CoolMOS™ꢀP7ꢀfamilies,ꢀtheꢀPFD7ꢀoffersꢀanꢀintegratedꢀultra-fastꢀbody

diodeꢀenablingꢀusageꢀinꢀresonantꢀtopologiesꢀwithꢀmarketsꢀlowestꢀreverse

recoveryꢀchargeꢀ(Qrr).

tab

Features

•ꢀIntegratedꢀultra-fastꢀbodyꢀdiode

•ꢀBest-in-classꢀreverseꢀrecoveryꢀchargeꢀQ_rr

•ꢀBest-in-classꢀFOMꢀR_DS(on)ꢀ*ꢀE_oss,ꢀreducedꢀQ_g,ꢀC_iss,ꢀandꢀC_oss

•ꢀBest-in-classꢀV_(GS)thꢀofꢀ3VꢀandꢀsmallestꢀꢀV_(GS)thꢀvariationꢀofꢀ±0.5V

•ꢀIntegratedꢀfastꢀbodyꢀdiode

Drain

Pin 2, Tab

•ꢀBest-in-classꢀCoolMOS™ꢀqualityꢀandꢀreliability

•ꢀFullyꢀoptimizedꢀportfolio

Gate

Pin 1

•ꢀBest-in-classꢀR_DS(on)ꢀinꢀTHDꢀandꢀSMDꢀpackages

•ꢀESDꢀprotectionꢀmin.ꢀClassꢀ2ꢀ(HBM)

Source

Pin 3

*1: Internal body diode

Benefits

•ꢀExcellentꢀhardꢀcommutationꢀrobustnessꢀenablingꢀusageꢀinꢀresonant

topologies

•ꢀExtraꢀsafetyꢀmarginꢀforꢀdesignsꢀwithꢀincreasedꢀbusꢀvoltage

•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions

•ꢀImprovedꢀfullꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications

•ꢀPriceꢀcompetitivenessꢀoverꢀpreviousꢀCoolMOS™ꢀfamilies

•ꢀImprovedꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures

Potentialꢀapplications

•ꢀSuitableꢀforꢀhardꢀ&ꢀsoftꢀswitchingꢀtopologies

•ꢀOptimizedꢀforꢀusageꢀinꢀLLCꢀandꢀZVSꢀtopologies

•ꢀPFCꢀ&ꢀLLCꢀapplicationsꢀinꢀLightingꢀandꢀIndustrialꢀSMPS

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j= 25 °C

R_DS(on),max

Value

950

450

Unit

mΩ

Q_g,typ

I_D

13.3

3.0

E_oss@ 500V

Body diode di_F/dt

Q_oss@ 500V

µJ

1300

0.1

A/µs

µC

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPB95R450PFD7

PG-TO263-3

95R450D7

see Appendix A

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPB95R450PFD7

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPB95R450PFD7

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

13.3

8.4

T_C=25°C

Continuous drain current¹⁾

I_D

T_C=100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

E_AR

I_AS

T_C=25°C

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, single pulse

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation

I_D=1.8A; V_DD=50V; see table 10

0.22

1.8

120

I_D=1.8A; V_DD=50V; see table 10

dv/dt

V_GS

P_tot

T_stg

T_j

V/ns V_DS=0...400V

-20

-30

static;

AC (f>1 Hz)

104

150

°C

T_C=25°C

Storage temperature

-55

Operating junction temperature

Mounting torque

Ncm -

Continuous diode forward current

Diode pulse current²⁾

I_S

T_C=25°C

I_S,pulse

T_C=25°C

V_DS=0...400V,ꢀI_SD<=9A,ꢀT_j=25°Cꢀꢀꢀꢀꢀꢀꢀ

see table 8

Reverse diode dv/dt³⁾

dv/dt

V/ns

V_DS=0...400V,ꢀI_SD<=9A,ꢀT_j=25°Cꢀꢀꢀꢀꢀꢀꢀ

see table 8

Maximum diode commutation speed

Insulation withstand voltage

di_F/dt

1300 A/µs

n.a.

V_ISO

V_rms,ꢀT_C=25°C,ꢀt=1min

¹⁾Limited by T_j,max. Maximum Duty Cycle D = 0.50

²⁾Pulse width t_plimited by T_j,max

³⁾Identical low side and high side switch with identical R_G

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPB95R450PFD7

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

1.20

Thermal resistance, junction - case

R_thJC

°C/W -

Thermal resistance, junction - ambient R_thJA

°C/W device on PCB, minimal footprint

Device on 40mm*40mm*1.5mm

epoxy PCB FR4 with 6cm² (one

Thermal resistance, junction - ambient

for SMD version

layer, 70µm thickness) copper area

for drain connection and cooling.

PCB is vertical without air stream

cooling.

R_thJA

°C/W

Soldering temperature, wave- & reflow

soldering allowed

T_sold

260

°C

reflow MSL1

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPB95R450PFD7

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

950

2.5

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_(GS)th

V_GS=0V,ꢀI_D=1mA

3.5

V_DS=V_GS,ꢀI_D=0.36mA

V_DS=950V,ꢀV_GS=0V,ꢀT_j=25°C

V_DS=950V,ꢀV_GS=0V,ꢀT_j=150°C

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

I_DSS

µA

Ω

I_GSS

100

V_GS=20V,ꢀV_DS=0V

0.35

0.93

0.45

V_GS=10V,ꢀI_D=7.2A,ꢀT_j=25°C

V_GS=10V,ꢀI_D=7.2A,ꢀT_j=150°C

R_DS(on)

R_G

Ω

f=250kHz,ꢀopenꢀdrain

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

Values

Typ.

1230

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Input capacitance

Output capacitance

C_iss

V_GS=0V,ꢀV_DS=400V,ꢀf=250kHz

C_oss

Effective output capacitance, energy

related¹⁾

C_o(er)

C_o(tr)

t_d(on)

t_r

277

V_GS=0V,ꢀV_DS=0...400V

Effective output capacitance, time

related²⁾

I_D=constant,ꢀV_GS=0V,ꢀV_DS=0...400V

V_DD=400V,ꢀV_GS=13V,ꢀI_D=7.2A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Turn-on delay time

Rise time

V_DD=400V,ꢀV_GS=13V,ꢀI_D=7.2A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

8.7

4.7

V_DD=400V,ꢀV_GS=13V,ꢀI_D=7.2A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Turn-off delay time

Fall time

t_d(off)

t_f

V_DD=400V,ꢀV_GS=13V,ꢀI_D=7.2A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

V_DD=760V,ꢀI_D=7.2A,ꢀV_GS=0ꢀtoꢀ10V

Q_gd

Q_g

Gate plateau voltage

V_plateau

4.5

¹⁾ꢀC_o(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

²⁾ꢀC_o(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPB95R450PFD7

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics

Values

Typ.

1.1

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Diode forward voltage

Reverse recovery time

V_SD

t_rr

V_GS=0V,ꢀI_F=7.2A,ꢀT_j=25°C

V_R=400V,ꢀI_F=7.2A,ꢀdi_F/dt=100A/µs;

see table 8

149

0.72

9.3

V_R=400V,ꢀI_F=7.2A,ꢀdi_F/dt=100A/µs;

see table 8

Reverse recovery charge

Q_rr

I_rrm

µC

V_R=400V,ꢀI_F=7.2A,ꢀdi_F/dt=100A/µs;

see table 8

Peak reverse recovery current

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPB95R450PFD7

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams

Diagramꢀ1:ꢀPowerꢀdissipation

Diagramꢀ2:ꢀSafeꢀoperatingꢀarea

120

10²

1 µs

10 µs

100

10¹

10⁰

100 µs

10^-1

10^-2

10^-3

10^-4

1 ms

10 ms

100

125

150

10⁰

10¹

10²

10³

T_Cꢀ[°C]

V_DSꢀ[V]

P_tot=f(T_C)

I_D=f(V_DS);ꢀT_C=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance

10²

10¹

1 µs

10¹

10⁰

10 µs

10⁰

0.5

100 µs

10^-1

10^-2

10^-3

10^-4

0.2

0.1

1 ms

0.05

10^-1

0.01

0.02

10 ms

single pulse

10^-2

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

V_DSꢀ[V]

t_pꢀ[s]

I_D=f(V_DS);ꢀT_C=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Z_thJCꢀ=f(t_P);ꢀparameter:ꢀD=t_p/T

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPB95R450PFD7

Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics

Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics

20 V

10 V

8 V

7 V

20 V

6 V

10 V

8 V

7 V

5.5 V

6 V

5.5 V

5 V

4.5 V

V_DSꢀ[V]

I_D=f(V_DS);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

I_D=f(V_DS);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance

Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance

1.400

3.0

20 V

2.5

2.0

1.5

1.0

0.5

1.200

10 V

7 V

1.000

6.5 V

6 V

5.5 V

0.800

0.600

-50

-25

100

125

150

I_Dꢀ[A]

T_jꢀ[°C]

R_DS(on)=f(I_D);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

R_DS(on)=f(T_j);ꢀI_D=7.2ꢀA;ꢀV_GS=10ꢀV

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPB95R450PFD7

Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics

Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge

25 °C

760 V

120 V

150 °C

V_GSꢀ[V]

Q_gateꢀ[nC]

I_D=f(V_GS);ꢀV_DS=20V;ꢀparameter:ꢀT_j

V_GS=f(Q_gate);ꢀI_D=7.2ꢀAꢀpulsed;ꢀparameter:ꢀV_DD

Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode

Diagramꢀ12:ꢀAvalancheꢀenergy

10²

10¹

125 °C

25 °C

10⁰

10^-1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

100

125

150

V_SDꢀ[V]

T_jꢀ[°C]

I_F=f(V_SD);ꢀparameter:ꢀT_j

E_AS=f(T_j);ꢀI_D=1.8ꢀA;ꢀV_DD=50ꢀV

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPB95R450PFD7

Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage

Diagramꢀ14:ꢀTyp.ꢀcapacitances

1050

10⁵

1030

1010

990

970

950

930

910

890

870

850

10⁴

10³

10²

10¹

10⁰

Ciss

Coss

Crss

-50

-25

100

125

150

100

200

300

400

500

T_jꢀ[°C]

V_DSꢀ[V]

V_BR(DSS)=f(T_j);ꢀI_D=1ꢀmA

C=f(V_DS);ꢀV_GS=0ꢀV;ꢀf=250ꢀkHz

Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy

200

400

600

800

1000

V_DSꢀ[V]

E_oss=f(V_DS

)

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPB95R450PFD7

5ꢀꢀꢀꢀꢀTestꢀCircuits

Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics

Test circuit for diode characteristics

Diode recovery waveform

R_g1

V_DS

R_g2

I_F

R_g1 = R_g2

Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes

Switching times test circuit for inductive load

Switching times waveform

V_DS

90%

10%

V_DS

V_GS

t_d(off)

t_f

t_d(on)

t_on

t_r

t_off

Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload

Unclamped inductive load test circuit

Unclamped inductive waveform

V_(BR)DS

I_D

V_DS

I_D

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPB95R450PFD7

6ꢀꢀꢀꢀꢀPackageꢀOutlines

Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-3,ꢀdimensionsꢀinꢀmm/inches

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPB95R450PFD7

7ꢀꢀꢀꢀꢀAppendixꢀA

Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks

• IFXꢀCoolMOSꢀPFD7ꢀ950VꢀWebpage:ꢀwww.infineon.com

• IFXꢀCoolMOSꢀPFD7ꢀ950Vꢀapplicationꢀnote:ꢀwww.infineon.com

• IFXꢀCoolMOSꢀPFD7ꢀ950Vꢀsimulationꢀmodel:ꢀwww.infineon.com

• IFXꢀDesignꢀtools:ꢀwww.infineon.com

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPB95R450PFD7

RevisionꢀHistory

IPB95R450PFD7

Revision:ꢀ2022-04-22,ꢀRev.ꢀ2.1

Previous Revision

Revision Date

Subjects (major changes since last revision)

Release of final version

2.0

2.1

2022-03-18

2022-04-22

Modified features

Trademarks

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Publishedꢀby

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Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ

(“Beschaffenheitsgarantie”)ꢀ.

Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe

product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation

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Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s

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Warnings

Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,

pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.

TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or

automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa

failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand

aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare

intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis

reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

IPB95R450PFD7 [INFINEON]

相关型号：

IPBD-02-D

IPBD-02-D-R

IPBD-02-S

IPBD-02-S-K

IPBD-02-S-M-K

IPBD-03-D-R

IPBD-03-S

IPBD-03-S-K

IPBD-03-S-R

IPBD-04-D

IPBD-04-S

IPBD-04-S-K