IPC020N10L3 [INFINEON]
英飞凌的 OptiMOS ™100V、120V 和150V 系列导通电阻 (R DS (on))极低，具有极快的开关性能，可为各种工业和消费类应用提供出色的性能。从高电流电机控制应用到快速开关 DC-DC 转换器或 D 类音频放大器，英飞凌的产品性能卓越，效率极高，空间要求极小。;
| 型号： | IPC020N10L3 |
| 厂家： | 
Infineon |
| 描述： | 英飞凌的 OptiMOS ™100V、120V 和150V 系列导通电阻 (R DS (on))极低，具有极快的开关性能，可为各种工业和消费类应用提供出色的性能。从高电流电机控制应用到快速开关 DC-DC 转换器或 D 类音频放大器，英飞凌的产品性能卓越，效率极高，空间要求极小。 开关 放大器 电机 音频放大器 转换器 |
| 文件： | 总4页 (文件大小：1998K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
BareꢀDie
OptiMOS™3ꢀPowerꢀMOSꢀTransistorꢀChip
IPC020N10L3
DataꢀSheet
Rev.ꢀ2.5
Final
Industrialꢀ&ꢀMultimarket
OptiMOS™3ꢀPowerꢀMOSꢀTransistorꢀChip
IPC020N10L3
PowerꢀMOSꢀTransistorꢀChip
1ꢀꢀꢀꢀꢀDescription
•ꢀN-channelꢀenhancementꢀmode
•ꢀForꢀdynamicꢀcharacterizationꢀreferꢀtoꢀtheꢀdatasheetꢀofꢀBSZ440N10LS3ꢀG
•ꢀAQLꢀ0.65ꢀforꢀvisualꢀinspectionꢀaccordingꢀtoꢀfailureꢀcatalogue
•ꢀElectrostaticꢀDischargeꢀSensitiveꢀDeviceꢀaccordingꢀtoꢀMIL-STDꢀ883C
•ꢀDieꢀbond:ꢀsolderedꢀorꢀglued
•ꢀBacksideꢀmetallization:ꢀNiVꢀsystem
•ꢀFrontsideꢀmetallization:ꢀAlCuꢀsystem
•ꢀPassivation:ꢀnitrideꢀ(onlyꢀonꢀedgeꢀstructure)
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
Drain
V(BR)DSS
100
V
RDS(on)
441)
mΩ
mm2
µm
Gate
Die size
Thickness
2.1 x 0.96
220
Source
Typeꢀ/ꢀOrderingꢀCode
Package
Chip
Marking
RelatedꢀLinks
IPC020N10L3
not defined
-
2ꢀꢀꢀꢀꢀElectricalꢀCharacteristicsꢀonꢀWaferꢀLevel
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀ
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
IDSS
100
V
VGS=0ꢀVꢀ,ID=1ꢀmA
VDS=VGS,ꢀID=12ꢀµA
VGS=0ꢀVꢀ,VDS=100ꢀV
VGS=20ꢀVꢀ,VDS=0ꢀV
1.1
1.7
0.1
1
422)
1.0
184)
2.1
1
V
Zero gate voltage drain current
Gate-source leakage current
Drain-source on- resistance
Reverse diode forward on-voltage
Avalanche energy, single pulse
-
-
-
-
-
µA
IGSS
100
nA
RDS(on)
VSD
1003) mΩ VGS=4.5ꢀVꢀ,ID=2.0ꢀA
1.2
-
V
VGS=0ꢀVꢀ,IF=1ꢀA
EAS
mJ
ID =12 A, RGS =25 Ω
1) packaged in a S308 (see ref. product). Maximum RDS(on) at VGS=10V
2)ꢀtypicalꢀbareꢀdieꢀRDS(on);ꢀVGS=ꢀ4.5ꢀV
3) limited by wafer test-equipment
4) Wafer tested.
Final Data Sheet
2
Rev.ꢀ2.5,ꢀꢀ2014-07-23
OptiMOS™3ꢀPowerꢀMOSꢀTransistorꢀChip
IPC020N10L3
3ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀChip,ꢀdimensionsꢀinꢀµm
Final Data Sheet
3
Rev.ꢀ2.5,ꢀꢀ2014-07-23
OptiMOS™3ꢀPowerꢀMOSꢀTransistorꢀChip
IPC020N10L3
RevisionꢀHistory
IPC020N10L3
Revision:ꢀ2014-07-23,ꢀRev.ꢀ2.5
Previous Revision
Revision Date
2.5
Subjects (major changes since last revision)
Release Final Version
2014-07-23
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intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
4
Rev.ꢀ2.5,ꢀꢀ2014-07-23
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