IPC90N04S5L3R3ATMA1 [INFINEON]
Power Field-Effect Transistor, 90A I(D), 40V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-33, 8 PIN;
| 型号： | IPC90N04S5L3R3ATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 90A I(D), 40V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-33, 8 PIN ATM 异步传输模式 PC 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPC90N04S5L-3R3
OptiMOS™-5 Power-Transistor
Product Summary
VDS
40
3.3
90
V
RDS(on),max
ID
mW
A
Features
PG-TDSON-8-33
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPC90N04S5L-3R3
PG-TDSON-8-33 5N04L3R3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25 °C, VGS=10 V
T C=100°C, VGS=10V2)
90
A
67
Pulsed drain current2)
I D,pulse
EAS
T C=25°C
360
Avalanche energy, single pulse2)
Avalanche current, single pulse4)
Gate source voltage
I D=45A
40
90
mJ
A
I AS
-
VGS
-
±16
V
Ptot
T C=25°C
Power dissipation
62
W
°C
T j, T stg
Operating and storage temperature
-
-55 ... +175
Rev. 1.0
page 1
2016-12-15
IPC90N04S5L-3R3
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
Thermal resistance, junction - case
-
-
-
-
-
2.4
50
K/W
Thermal resistance, junction -
ambient
6 cm2 cooling area3)
R thJA
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0V, I D= 1mA
VGS(th) VDS=VGS, I D=23µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
1.2
1.6
2.0
VDS=40V, VGS=0V,
T j=25°C
I DSS
Zero gate voltage drain current
-
-
-
-
1
µA
VDS=40V, VGS=0V,
T j=125°C1)
100
I GSS
VGS=16V, VDS=0V
Gate-source leakage current
-
-
-
-
100 nA
R DS(on) VGS=4.5V, I D=45A
VGS=10V, I D=45A
Drain-source on-state resistance
3.4
2.6
4.7
3.3
mW
Rev. 1.0
page 2
2016-12-15
IPC90N04S5L-3R3
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
1650
370
25
3
2145 pF
492
VGS=0V, VDS=25V,
f =1MHz
38
-
-
-
-
ns
2
VDD=20V, VGS=10V,
I D=90A, R G,ext=3.5W
t d(off)
t f
Turn-off delay time
Fall time
15
7
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
4.6
6.3
30
3
6
9.5
40
-
nC
Q gd
VDD=32V, I D=90A,
VGS=0 to 10V
Q g
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
90
T C=25°C
I S,pulse
360
VGS=0V, I F=45A,
T j=25°C
VSD
Diode forward voltage
-
-
-
0.8
36
25
1.1
V
VR=20V, I F=50A,
diF/dt =100A/µs
Reverse recovery time2)
Reverse recovery charge2)
t rr
-
-
ns
nC
Q rr
1) Current is limited by package; with an R thJC = 2.4K/W the chip is able to carry 95A at 25°C.
2) The parameter is not subject to production test- verified by design/characterization.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4) The device is tested in production with an avalanche current of 70 A.
Rev. 1.0
page 3
2016-12-15
IPC90N04S5L-3R3
1 Power dissipation
2 Drain current
Ptot = f(T C); VGS = 10 V
I D = f(T C); VGS = 10 V
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
100
10
1 µs
0.5
100
10 µs
0.1
100 µs
0.05
10-1
0.01
150 µs
single pulse
10-2
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2016-12-15
IPC90N04S5L-3R3
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: VGS
360
2.5 V
14
320
2.75 V
10 V
12
280
240
200
160
120
80
3 V
10
8
3.5 V
3.5 V
6
3 V
4
10 V
2.75 V
2
40
2.5 V
0
0
0
1
2
3
0
40
80
120
160
200
240
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 45 A; VGS = 10 V
360
320
280
240
200
160
120
80
6
5
4
3
2
1
175 °C
40
-55 °C
25 °C
0
1.5
2
2.5
VGS [V]
3
3.5
4
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 1.0
page 5
2016-12-15
IPC90N04S5L-3R3
9 Typ. gate threshold voltage
VGS(th) = f(T j); VGS = VDS
parameter: I D
10 Typ. capacitances
C = f(VDS); VGS = 0 V; f = 1 MHz
104
2
Ciss
1.5
230 µA
103
102
101
23 µA
Coss
1
0.5
Crss
0
0
10
20
30
-60
-20
20
60
100
140
180
VDS [V]
Tj [°C]
11 Typical forward diode characteristics
12 Avalanche characteristics
I A S= f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
100
25 °C
100 °C
102
150 °C
10
25 °C
175 °C
101
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
1
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2016-12-15
IPC90N04S5L-3R3
13 Avalanche energy
14 Drain-source breakdown voltage
EAS = f(T j)
VBR(DSS) = f(T j); I D = 1 mA
46
100
90
44
42
40
38
36
80
70
22.5 A
60
50
40
45 A
30
20
90 A
10
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
VGS = f(Q gate); I D = 90 A pulsed
parameter: VDD
10
9
8
7
6
5
4
3
2
1
0
V GS
Qg
8 V
32 V
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
0
10
20
30
Qgate [nC]
Rev. 1.0
page 7
2016-12-15
IPC90N04S5L-3R3
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2016
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2016-12-15
IPC90N04S5L-3R3
Revision History
Version
Date
Changes
Final Data Sheet
Revision 1.0
06.12.2016
Rev. 1.0
page 9
2016-12-15
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