IPD053N08N3 G [INFINEON]
OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。;
| 型号： | IPD053N08N3 G |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。 通信 服务器 |
| 文件： | 总9页 (文件大小：345K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD053N08N3 G
OptiMOS®3 Power-Transistor
Product Summary
Features
VDS
80
5.3
90
V
• N-channel, normal level
RDS(on),max
ID
mW
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
previous engineering
sample code:
IPD06CN08N
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPD053N08N3 G
Package
Marking
PG-TO252-3
053N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
90
90
A
T C=100 °C
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C
360
I D=90 A, R GS=25 W
Avalanche energy, single pulse
Gate source voltage
190
mJ
V
V GS
±20
P tot
T C=25 °C
Power dissipation
150
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
Rev. 1.1
page 1
2014-05-19
IPD053N08N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
Thermal resistance,
-
-
-
-
-
-
1
K/W
R thJA
minimal footprint
75
50
6 cm2 cooling area3)
junction - ambient
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=90 µA
Drain-source breakdown voltage
Gate threshold voltage
80
2
-
-
V
2.8
3.5
V DS=80 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
V DS=80 V, V GS=0 V,
T j=125 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
-
1
100 nA
R DS(on) V GS=10 V, I D=90 A
V GS=6 V, I D=45 A
Drain-source on-state resistance
4.4
5.8
5.3
9.5
mW
R G
Gate resistance
-
2.2
-
-
W
|V DS|>2|I D|R DS(on)max
I D=90 A
,
g fs
Transconductance
56
111
S
1)J-STD20 and JESD22
2) See figure 3
3) Device on 40 mm x 40 mm x 1.5 mm
epoxy PCB FR4 with 6 cm2 (one layer, 70
Rev. 1.1
page 2
2014-05-19
IPD053N08N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
3570
963
36
4750 pF
1280
V GS=0 V, V DS=40 V,
f =1 MHz
C oss
C rss
t d(on)
t r
54
18
-
-
-
-
ns
66
V DD=40 V, V GS=10 V,
I D=90 A, R G,ext=1.6 W
t d(off)
t f
Turn-off delay time
Fall time
38
10
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
19
11
19
52
5.3
70
25
16
28
69
-
nC
Q gd
V DD=40 V, I D=90A,
V GS=0 to 10 V
Q sw
Q g
Gate charge total
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=40 V, V GS=0 V
93
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
90
A
T C=25 °C
I S,pulse
360
V GS=0 V, I F=90 A,
T j=25 °C
V SD
Diode forward voltage
-
1.0
1.2
V
t rr
Reverse recovery time
-
-
72
-
-
ns
V R=40 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
130
nC
4) See figure 16 for gate charge parameter definition
Rev. 1.1
page 3
2014-05-19
IPD053N08N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
100
80
60
40
20
0
150
120
90
60
30
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
10 µs
102
100 µs
100
0.5
1 ms
0.2
0.1
10 ms
101
10-1
0.05
DC
0.02
0.01
single pulse
100
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.1
page 4
2014-05-19
IPD053N08N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
360
20
8 V
10 V
7 V
320
16
280
5.5 V
5 V
4.5 V
6.5 V
240
200
160
120
80
12
8
6 V
6 V
5.5 V
6.5 V
8 V
7 V
4
10 V
5 V
40
4.5 V
0
0
0
1
2
3
4
5
0
40
80
120
160
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
120
80
40
0
150
120
90
60
175 °C
25 °C
30
0
0
2
4
6
8
0
40
80
120
160
VGS [V]
ID [A]
Rev. 1.1
page 5
2014-05-19
IPD053N08N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
R DS(on)=f(T j); I D=90 A; V GS=10 V
12
10
8
4
3
900 µA
90 µA
98 %
6
2
typ
4
1
0
2
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
103
Ciss
Coss
175 °C, 98%
25 °C
175 °C
103
102
25 °C, 98%
102
101
Crss
101
100
0
0
20
40
60
80
0.5
1
1.5
2
VDS [V]
VSD [V]
Rev. 1.1
page 6
2014-05-19
IPD053N08N3 G
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=90 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
10
1
12
10
8
25 °C
40 V
20 V
60 V
100 °C
6
150 °C
4
2
0
0.1
1
10
100
1000
0
20
40
60
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
90
85
80
75
70
65
60
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 1.1
page 7
2014-05-19
IPD053N08N3 G
PG-TO252-3 (D-Pak)
Rev. 1.1
page 8
2014-05-19
IPD053N08N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
Rev. 1.1
page 9
2014-05-19
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