IPD122N10N3 G [INFINEON]
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。;
| 型号： | IPD122N10N3 G |
| 厂家： | 
Infineon |
| 描述： | 英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。 |
| 文件： | 总9页 (文件大小：503K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD122N10N3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
VDS
100
12.2
59
V
• N-channel, normal level
RDS(on),max
ID
mW
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPD122N10N3 G
Package
Marking
PG-TO252-3
122N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
59
42
A
T C=100 °C
Pulsed drain current2)
I D,pulse
EAS
T C=25 °C
236
I D=46 A, R GS=25 W
Avalanche energy, single pulse
Gate source voltage
70
mJ
V
VGS
±20
Ptot
T C=25 °C
Power dissipation
94
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) See figure 3
Rev. 2.3
page 1
2014-05-19
IPD122N10N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
Thermal resistance,
-
-
-
-
-
-
1.6
75
50
K/W
R thJA
minimal footprint
6 cm2 cooling area3)
junction - ambient
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0 V, I D=1 mA
VGS(th) VDS=VGS, I D=46 µA
Drain-source breakdown voltage
Gate threshold voltage
100
2
-
-
V
2.7
3.5
VDS=100 V, VGS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
VDS=100 V, VGS=0 V,
T j=125 °C
100
I GSS
VGS=20 V, VDS=0 V
Gate-source leakage current
-
-
-
-
1
100 nA
R DS(on) VGS=10 V, I D=46 A
VGS=6 V, I D=23 A
R G
Drain-source on-state resistance
10.5
13.1
1.1
12.2
23.1
-
mW
Gate resistance
W
|VDS|>2|I D|R DS(on)max
I D=46 A
,
g fs
Transconductance
29
57
-
S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3
page 2
2014-05-19
IPD122N10N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
1880
330
14
14
8
2500 pF
VGS=0 V, VDS=50 V,
f =1 MHz
C oss
C rss
t d(on)
t r
439
-
-
-
-
-
ns
VDD=50 V, VGS=10 V,
I D=46 A, R G,ext=1.6 W
t d(off)
t f
Turn-off delay time
Fall time
24
5
Gate Charge Characteristics6)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
9
5
-
-
nC
Q gd
VDD=50 V, I D=46 A,
VGS=0 to 10 V
Q sw
Q g
9
-
Gate charge total
26
4.9
35
35
-
Vplateau
Q oss
Gate plateau voltage
Output charge
V
VDD=50 V, VGS=0 V
46
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
59
A
T C=25 °C
I S,pulse
236
VGS=0 V, I F=46 A,
T j=25 °C
VSD
Diode forward voltage
-
1
1.2
V
t rr
Reverse recovery time
-
-
61
-
-
ns
VR=15 V, I F=46 A ,
diF/dt =100 A/µs
Q rr
Reverse recovery charge
103
nC
6) See figure 16 for gate charge parameter definition
Rev. 2.3
page 3
2014-05-19
IPD122N10N3 G
1 Power dissipation
2 Drain current
Ptot=f(T C)
I D=f(T C); VGS≥10 V
100
80
60
40
20
0
60
50
40
30
20
10
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
I D=f(VDS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
10 µs
102
101
100
100
0.5
100 µs
0.2
0.1
0.05
1 ms
0.02
10-1
0.01
10 ms
single pulse
DC
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 2.3
page 4
2014-05-19
IPD122N10N3 G
5 Typ. output characteristics
I D=f(VDS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: VGS
parameter: VGS
200
25
180
10 V
4.5 V
160
20
5 V
7.5 V
140
6 V
120
100
80
15
10
5
6 V
7.5 V
10 V
5.5 V
60
5 V
40
4.5 V
20
0
0
0
0
1
2
3
4
5
0
20
40
60
80
100
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(VGS); |VDS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100
80
60
40
20
100
80
60
40
20
0
25 °C
175 °C
0
0
2
4
6
8
0
40
80
120
VGS [V]
ID [A]
Rev. 2.3
page 5
2014-05-19
IPD122N10N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
VGS(th)=f(T j); VGS=VDS
parameter: I D
R DS(on)=f(T j); I D=46 A; VGS=10 V
28
26
24
22
20
18
4
3.5
3
460 µA
2.5
46 µA
16
98 %
14
2
1.5
1
typ
12
10
8
6
4
0.5
0
2
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(VSD
C =f(VDS); VGS=0 V; f =1 MHz
)
parameter: T j
104
103
Ciss
175 °C, 98%
103
102
101
102
25 °C
Coss
175 °C
25 °C, 98%
101
Crss
100
0
0
20
40
60
80
0.5
1
1.5
2
VDS [V]
VSD [V]
Rev. 2.3
page 6
2014-05-19
IPD122N10N3 G
13 Avalanche characteristics
14 Typ. gate charge
VGS=f(Q gate); I D=46 A pulsed
parameter: VDD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
10
8
80 V
50 V
25 °C
20 V
6
4
2
0
100 °C
10
150 °C
1
0.1
1
10
100
1000
0
10
20
30
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
VBR(DSS)=f(T j); I D=1 mA
110
105
100
95
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
90
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.3
page 7
2014-05-19
IPD122N10N3 G
PG-TO-252 (D-Pak)
Rev. 2.3
page 8
2014-05-19
IPD122N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.3
page 9
2014-05-19
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