select brandShort,logo,brand from pdf_brand where id=10020 limit 1 IPD135N08N3GBTMA1_技术文档

IPD135N08N3GBTMA1 [INFINEON]

Power Field-Effect Transistor, 45A I(D), 80V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN;
IPD135N08N3GBTMA1
型号: IPD135N08N3GBTMA1
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 45A I(D), 80V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN

开关 脉冲 晶体管
文件: 总9页 (文件大小:340K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IPD13N03LA

OptiMOS 2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD13N03LAG

OptiMOS㈢2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD144N06NG

OptiMOS㈢ Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD144N06NGBTMA1

Power Field-Effect Transistor, 50A I(D), 60V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD14N03L

OptiMOS Buck converter series

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD14N06S2-80

OptiMOS Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD14N06S280ATMA1

Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD15N06S2L-64

OptiMOS Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD15N06S2L64ATMA2

Power Field-Effect Transistor, 19A I(D), 55V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252-3-11, 3/2 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD160N04LG

OptiMOS3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD160N04LGBTMA1

Power Field-Effect Transistor, 30A I(D), 40V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD16CN10NG

OptiMOS㈢2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD16CNE8NG

OptiMOS㈢2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD170N04NG

OptiMOS3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD170N04NGBTMA1

Power Field-Effect Transistor, 30A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD180N10N3 G

英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比,该系列在 R Ds(on)和 FOM(品质因数)方面均降低了30%。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD180N10N3G

OptiMOSTM3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD180N10N3GATMA1

Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD180N10N3GBTMA1

Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPD18DP10LM

DPAK 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、负载开关和反极性保护应用的全新技术。P 沟道器件的主要优势在于降低中低功率应用的设计复杂度。此类产品可轻松连接 MCU,开关速度快且雪崩能力强,尤其适合质量要求高的应用。器件支持逻辑电平,具备较宽的 RDS(on) 范围和低 Qg,低负载下效率较高。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON