IPD400N06NG_08 [INFINEON]

OptiMOS® Power-Transistor Features N-channel enhancement - normal level Avalanche rated; OptiMOS®电源晶体管特点N沟道增强 - 正常水平额定雪崩
IPD400N06NG_08
型号: IPD400N06NG_08
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

OptiMOS® Power-Transistor Features N-channel enhancement - normal level Avalanche rated
OptiMOS®电源晶体管特点N沟道增强 - 正常水平额定雪崩

晶体 晶体管
文件: 总9页 (文件大小:503K)
下载:  下载PDF数据表文档文件

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OptiMOS-T2 Power-Transistor

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6 INFINEON

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9 INFINEON

IPD40N03S4L08ATMA1

Power Field-Effect Transistor, 40A I(D), 30V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2

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0 INFINEON

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26 INFINEON

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0 INFINEON

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0 INFINEON

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16 INFINEON

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49 INFINEON

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0 INFINEON

IPD50N03S2L-06

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23 INFINEON

IPD50N03S2L06ATMA1

Power Field-Effect Transistor, 50A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

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1 INFINEON

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OptiMOS-T2 Power-Transistor

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27 INFINEON

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8 INFINEON