IPD50N10S3L-16 [INFINEON]
OptiMOS-T Power-Transistor; 的OptiMOS -T电源晶体管
| 型号： | IPD50N10S3L-16 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS-T Power-Transistor |
| 文件： | 总9页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD50N10S3L-16
OptiMOS®-T Power-Transistor
Product Summary
VDS
100
15
V
R DS(on),max
I D
mΩ
A
50
Features
• N-channel - Enhancement mode
PG-TO252-3-11
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPD50N10S3L-16
PG-TO252-3-11 QN10L16
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
I D
T C=25°C, VGS=10V
Continuous drain current
50
A
T C=100°C, VGS=10V1)
38
Pulsed drain current1)
Avalanche energy, single pulse1)
I D,pulse
EAS
T C=25°C
I D=25A
200
330
mJ
A
I AS
Avalanche current, single pulse
50
Gate source voltage2)
VGS
±20
V
Ptot
T C=25 °C
Power dissipation
100
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... +175
55/175/56
Rev. 1.1
page 1
2008-04-09
IPD50N10S3L-16
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics1)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
1.5
62
40
K/W
minimal footprint
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0V, I D= 1mA
DS=VGS, I D=60µA
Drain-source breakdown voltage
Gate threshold voltage
100
1.2
-
-
V
1.7
2.4
V
DS=80V, VGS=0V,
I DSS
Zero gate voltage drain current
-
-
0.01
1
0.1
10
µA
T j=25°C
V
DS=80V, VGS=0V,
T j=125°C1)
I GSS
V
V
V
GS=16V, VDS=0V
GS=4.5V, I D=50A
GS=10 V, I D=50 A
Gate-source leakage current
-
-
-
-
100 nA
R DS(on)
Drain-source on-state resistance
15.3
12.5
19.9
15.0
mΩ
Rev. 1.1
page 2
2008-04-09
IPD50N10S3L-16
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
3215
730
63
10
5
4180 pF
950
V
GS=0V, VDS=25V,
f =1MHz
95
-
-
-
-
ns
V
DD=20V, VGS=10V,
I D=50A, R G=3.5Ω
t d(off)
t f
Turn-off delay time
Fall time
29
5
Gate Charge Characteristics1)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
9
8
12
12
64
-
nC
Q gd
V
V
DD=80V, I D=50A,
GS=0 to 10V
Q g
49
3.7
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current1)
Diode pulse current1)
I S
-
-
-
-
50
T C=25°C
I S,pulse
200
V
GS=0V, I F=50A,
VSD
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge1)
0.6
1
1.2
V
T j=25°C
VR=50V, I F=I S,
diF/dt =100A/µs
t rr
-
-
97
-
-
ns
nC
Q rr
178
1) Defined by design. Not subject to production test.
2) Qualified with VGS = +20/-5V.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2008-04-09
IPD50N10S3L-16
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS ≥ 6 V
I D = f(T C); VGS ≥ 6 V
120
100
80
60
40
20
0
60
50
40
30
20
10
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
Z
parameter: D =t p/T
101
1000
100
10
1 µs
100
0.5
10 µs
0.1
100 µs
10-1
0.05
0.01
10-2
1 ms
single pulse
10-3
1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t p [s]
V
DS [V]
Rev. 1.1
page 4
2008-04-09
IPD50N10S3L-16
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
DS(on) = f(I D); T j = 25 °C
R
parameter: VGS
200
50
10 V
5 V
4 V
3 V
3.5 V
4.5 V
160
120
80
40
0
40
4.5 V
30
20
4 V
5 V
3.5 V
3 V
10 V
10
0
0
1
2
3
4
5
6
40
80
D [A]
120
160
V
DS [V]
I
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R
DS(on) = f(T j); I D = 50 A; VGS = 10 V
160
120
80
40
0
30
-55 °C
25 °C
25
20
15
10
5
175 °C
1
2
3
4
5
-60
-20
20
60
T j [°C]
100
140
180
V
GS [V]
Rev. 1.1
page 5
2008-04-09
IPD50N10S3L-16
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
10 Typ. capacitances
V
C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: I D
2.5
104
103
102
Ciss
2
1.5
1
300 µA
60 µA
Coss
Crss
0.5
101
0
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
V
DS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
A S= f(t AV
IF = f(VSD)
I
)
parameter: T j
parameter: Tj(start)
103
102
101
100
25 °C
100 °C
150 °C
10
1
25 °C
175 °C
100
0.1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
10
AV [µs]
100
1000
V
SD [V]
t
Rev. 1.1
page 6
2008-04-09
IPD50N10S3L-16
13 Typical avalanche energy
AS = f(T j)
14 Typ. drain-source breakdown voltage
E
V
BR(DSS) = f(T j); I D = 1 mA
parameter: I D
115
600
12.5 A
500
110
105
100
95
400
300
25 A
200
50 A
100
90
0
-55
-15
25
65
105
145
25
75
125
175
T j [°C]
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V
GS = f(Q gate); I D = 50 A pulsed
parameter: VDD
10
9
8
7
6
5
4
3
2
1
V GS
Q g
20 V
80 V
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
0
10
20
Q
30
gate [nC]
40
50
Rev. 1.1
page 7
2008-04-09
IPD50N10S3L-16
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2008
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.1
page 8
2008-04-09
IPD50N10S3L-16
Revision History
Version
Date
Changes
Page 1: VGS changed from ±16V
08.04.2008 to ±20V
1.1
1.1
08.04.2008 Page 3: Footnote 2) added
Page 1: EAS changed from 264mJ
09.04.2008 to 330mJ
1.1
Rev. 1.1
page 9
2008-04-09
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