IPD60R2K1CEAUMA1 [INFINEON]
Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2;
| 型号： | IPD60R2K1CEAUMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 开关 脉冲 晶体管 |
| 文件： | 总14页 (文件大小：1416K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD60R2K1CE,ꢀIPU60R2K1CE
MOSFET
DPAK
IPAK
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
tab
tab
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀisꢀa
2
1
1
2
3
3
price-performanceꢀoptimizedꢀplatformꢀenablingꢀtoꢀtargetꢀcostꢀsensitive
applicationsꢀinꢀConsumerꢀandꢀLightingꢀmarketsꢀbyꢀstillꢀmeetingꢀhighest
efficiencyꢀstandards.ꢀTheꢀnewꢀseriesꢀprovidesꢀallꢀbenefitsꢀofꢀaꢀfast
switchingꢀSuperjunctionꢀMOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuseꢀand
offeringꢀtheꢀbestꢀcostꢀdownꢀperformanceꢀratioꢀavailableꢀonꢀtheꢀmarket.
Drain
Pin 2, Tab
Gate
Pin 1
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀVeryꢀhighꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀuse/drive
Source
Pin 3
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications
Applications
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTVꢀandꢀindoorꢀlighting.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Id.
Value
650
2100
3.7
Unit
V
mΩ
A
Qg.typ
6.7
nC
A
ID,pulse
6
Eoss@400V
0.76
µJ
Typeꢀ/ꢀOrderingꢀCode
IPD60R2K1CE
Package
Marking
RelatedꢀLinks
see Appendix A
PG-TO 252
PG-TO 251
60S2K1CE
IPU60R2K1CE
Final Data Sheet
1
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R2K1CE,ꢀIPU60R2K1CE
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R2K1CE,ꢀIPU60R2K1CE
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
3.7
2.4
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
-
-
-
-
-
-
-
-
6
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
-
11
0.06
0.4
50
20
30
mJ
mJ
A
ID=0.4A; VDD=50V; see table 11
EAR
-
ID=0.4A; VDD=50V; see table 11
-
IAR
-
dv/dt
VGS
VGS
-
V/ns VDS=0...480V
-20
-30
V
V
static;
AC (f>1 Hz)
Power dissipation
TO-251, TO252
Ptot
-
-
38
W
TC=25°C
Storage temperature
Tstg
Tj
-40
-40
-
-
-
-
-
150
150
2.7
6
°C
°C
A
-
Operating junction temperature
Continuous diode forward current
Diode pulse current2)
-
IS
TC=25°C
TC=25°C
IS,pulse
-
A
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 9
Reverse diode dv/dt3)
dv/dt
dif/dt
-
-
-
-
15
V/ns
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 9
Maximum diode commutation speed
500
A/µs
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀꢀTO-251,ꢀTO-252
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
3.26
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
Tsold
-
-
260
°C
1.6mm (0.063 in.) from case for 10s
1) Limited by Tj max. Maximum duty cycle D=0.50
2) Pulse width tp limited by Tj,max
3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG
Final Data Sheet
3
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R2K1CE,ꢀIPU60R2K1CE
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
2.5
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
V
V
VGS=0V,ꢀID=0.25mA
VDS=VGS,ꢀID=0.06mA
3.0
3.5
-
-
-
10
1
-
VDS=600,ꢀVGS=0V,ꢀTj=25°C
VDS=600,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
1.80
4.68
2.10
-
VGS=10V,ꢀID=0.76A,ꢀTj=25°C
VGS=10V,ꢀID=0.76A,ꢀTj=150°C
RDS(on)
RG
-
12
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
140
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=100V,ꢀf=1MHz
VGS=0V,ꢀVDS=100V,ꢀf=1MHz
Coss
12
Effective output capacitance,
energy related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
8.5
30
7
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...480V
Effective output capacitance,
time related2)
ID=constant,ꢀVGS=0V,ꢀVDS=0...480V
VDD=400V,ꢀVGS=10V,ꢀID=0.9A,
RG=12.2Ω;ꢀseeꢀtableꢀ10
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=10V,ꢀID=0.9A,
RG=12.2Ω;ꢀseeꢀtableꢀ10
7
VDD=400V,ꢀVGS=10V,ꢀID=0.9A,
RG=12.2Ω;ꢀseeꢀtableꢀ10
Turn-off delay time
Fall time
td(off)
tf
30
50
VDD=400V,ꢀVGS=10ꢀV,ꢀID=0.9A,
RG=12.2Ω;ꢀseeꢀtableꢀ10
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
0.8
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=480V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=480V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=480V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=480V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
Qgd
3.6
Qg
6.7
Gate plateau voltage
Vplateau
5.4
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ80%ꢀVo(BR)DSS
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ80%ꢀVo(BR)DSS
Final Data Sheet
4
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R2K1CE,ꢀIPU60R2K1CE
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=0.9A,ꢀTj=25°C
VR=400V,ꢀIF=0.9A,ꢀdiF/dt=100A/µs;
see table 9
-
-
-
180
0.67
7.1
-
-
-
ns
VR=400V,ꢀIF=0.9A,ꢀdiF/dt=100A/µs;
see table 9
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=0.9A,ꢀdiF/dt=100A/µs;
see table 9
Peak reverse recovery current
Final Data Sheet
5
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R2K1CE,ꢀIPU60R2K1CE
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipationꢀ(NonꢀFullPAK)
Diagramꢀ2:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)
40
101
1 µs
35
30
25
20
15
10
5
10 µs
100 µs
100
1 ms
DC
10-1
10-2
10-3
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(NonꢀFullPAK)
101
101
1 µs
10 µs
0.5
0.2
100
10-1
10-2
10-3
100 µs
1 ms
100
DC
0.1
0.05
0.02
0.01
single pulse
10-1
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R2K1CE,ꢀIPU60R2K1CE
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
6
4.0
20 V
20 V
10 V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10 V
5
8 V
8 V
7 V
4
7 V
3
6 V
5.5 V
6 V
2
5 V
5.5 V
1
4.5 V
5 V
4.5 V
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
10
6
9
8
7
5
4
6.5V
6V
5V
7 V
5.5V
6
5
4
3
2
1
typ
3
2
1
0
98%
10 V
0
1
2
3
4
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=0.76ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
7
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R2K1CE,ꢀIPU60R2K1CE
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
6
10
25 °C
9
8
7
6
5
4
3
2
1
0
5
4
120 V
480 V
150 °C
3
2
1
0
0
2
4
6
8
10
12
0
1
2
3
4
5
6
7
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=0.9ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
12
25 °C
125 °C
11
10
9
101
8
7
6
5
100
4
3
2
1
10-1
0
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=0.4ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
8
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R2K1CE,ꢀIPU60R2K1CE
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
700
104
680
660
640
620
600
580
560
540
520
103
Ciss
102
Coss
101
Crss
100
-75 -50 -25
0
25
50
75 100 125 150 175
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=0.25ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
1.20
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
9
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R2K1CE,ꢀIPU60R2K1CE
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
VDS
Rg1
VDS(peak)
VDS
trr
VDS
IF
tF
tS
dIF / dt
Rg 2
IF
t
10%Irrm
Q
F
Q
S
IF
dI / dt
rr
trr =tF +tS
rr
Irrm
Q =QF +Q
S
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
10
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R2K1CE,ꢀIPU60R2K1CE
6ꢀꢀꢀꢀꢀPackageꢀOutlines
*) mold flash not included
MILLIMETERS
DIM
INCHES
MIN
2.16
0.00
0.64
0.65
5.00
0.46
0.46
5.97
5.02
6.40
4.70
MAX
2.41
0.15
0.89
1.15
5.50
0.60
0.98
6.22
5.84
6.73
5.60
MIN
MAX
0.095
0.006
0.035
0.045
0.217
0.024
0.039
0.245
0.230
0.265
0.220
A
A1
b
0.085
0.000
0.025
0.026
0.197
0.018
0.018
0.235
0.198
0.252
0.185
b2
b3
c
DOCUMENT NO.
Z8B00003328
0
c2
D
SCALE
D1
E
2.0
0
2.0
E1
e
2.29 (BSC)
0.090 (BSC)
0.180 (BSC)
3
4mm
4.57 (BSC)
3
e1
N
EUROPEAN PROJECTION
H
9.40
1.18
0.90
0.51
10.48
0.370
0.046
0.035
0.020
0.413
L
1.70
1.25
1.00
0.067
0.049
0.039
L3
L4
F1
F2
F3
F4
F5
F6
0.417
0.252
0.087
0.228
0.227
0.047
10.60
6.40
2.20
5.80
5.76
1.20
ISSUE DATE
01-09-2015
REVISION
05
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ252,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R2K1CE,ꢀIPU60R2K1CE
DOCUMENT NO.
Z8B00003330
MILLIMETERS
DIM
INCHES
0
MIN
2.16
0.90
0.64
0.65
4.95
0.46
0.46
5.97
5.04
6.35
4.70
MAX
2.41
1.14
0.89
1.15
5.50
0.60
0.89
6.22
5.77
6.73
5.21
MIN
MAX
0.095
0.045
0.035
0.045
0.217
0.024
0.035
0.245
0.227
0.265
0.205
SCALE
A
A1
b
0.085
0.035
0.025
0.026
0.195
0.018
0.018
0.235
0.198
0.250
0.185
2.0
0
2.0
b2
b4
c
4mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29
4.57
3
0.090
0.180
3
e1
N
ISSUE DATE
31-08-2015
L
8.89
0.85
0.89
9.65
2.29
1.37
0.350
0.033
0.035
0.380
0.090
0.054
REVISION
L1
L2
04
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ251,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R2K1CE,ꢀIPU60R2K1CE
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSTMꢀCEꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀCEꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀCEꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R2K1CE,ꢀIPU60R2K1CE
RevisionꢀHistory
IPD60R2K1CE, IPU60R2K1CE
Revision:ꢀ2016-03-31
Previous Revision
Date
Subjects (major changes since last revision)
Release of final version
2014-09-25
2015-11-17
2016-03-31
Updated with qualified for standard grade & updated package drawing
Modified Id, Rthjc. Modified SOA, Zthjc curves
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
WeꢀListenꢀtoꢀYourꢀComments
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
erratum@infineon.com
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2016ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
2016-03-31
相关型号：
IPD60R360CFD7
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
INFINEON
IPD60R380P6
英飞凌 CoolMOS™ P6 超结 MOSFET 系列旨在实现更高的系统效率，同时易于在 CoolMOS™ P6 中设计，填补了专注于提供最佳性能的技术与更专注于易用性的技术之间的空白。
INFINEON
©2020 ICPDF网 联系我们和版权申明