IPD60R400CEAUMA1 [INFINEON]
Power Field-Effect Transistor, 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2;
| 型号： | IPD60R400CEAUMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 |
| 文件： | 总17页 (文件大小：1345K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
MOSFET
DPAK
IPAKꢀSL
PG-TOꢀ220ꢀFP
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
tab
tab
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀisꢀa
2
1
3
price-performanceꢀoptimizedꢀplatformꢀenablingꢀtoꢀtargetꢀcostꢀsensitive
applicationsꢀinꢀConsumerꢀandꢀLightingꢀmarketsꢀbyꢀstillꢀmeetingꢀhighest
efficiencyꢀstandards.ꢀTheꢀnewꢀseriesꢀprovidesꢀallꢀbenefitsꢀofꢀaꢀfast
switchingꢀSuperjunctionꢀMOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuseꢀand
offeringꢀtheꢀbestꢀcostꢀdownꢀperformanceꢀratioꢀavailableꢀonꢀtheꢀmarket.
Drain
Pin 2, Tab
Gate
Pin 1
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀVeryꢀhighꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀuse/drive
Source
Pin 3
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications
Applications
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTVꢀandꢀindoorꢀlighting.
Pleaseꢀnote:ꢀNote1:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀon
theꢀgateꢀorꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
ꢀꢀꢀꢀNote2:ꢀ*6R400CEꢀisꢀFullꢀPAKꢀmarkingꢀonly
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Id.
Value
650
400
14.7
32
Unit
V
mΩ
A
Qg.typ
nC
A
ID,pulse
30
Eoss@400V
2.8
µJ
Typeꢀ/ꢀOrderingꢀCode
IPD60R400CE
Package
Marking
RelatedꢀLinks
PG-TO 252
PG-TO 251
IPS60R400CE
60S400CE / 6R400CE*
see Appendix A
IPA60R400CE
PG-TO 220 FullPAK
Final Data Sheet
1
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Final Data Sheet
2
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
14.7
9.3
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
-
-
-
-
-
-
-
-
30
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
-
210
0.32
1.8
50
mJ
mJ
A
ID=1.8A; VDD=50V; see table 11
EAR
-
ID=1.8A; VDD=50V; see table 11
-
IAR
-
dv/dt
VGS
VGS
-
V/ns VDS=0...480V
-20
-30
20
V
V
static;
30
AC (f>1 Hz)
Power dissipation (Non FullPAK)
TO-252, TO-251
Ptot
Ptot
-
-
-
-
112
31
W
W
TC=25°C
TC=25°C
Power dissipation (FullPAK)
TO-220FP
Storage temperature
Tstg
Tj
-40
-40
-
-
-
-
-
150
150
10.4
30
°C
°C
A
-
Operating junction temperature
Continuous diode forward current
Diode pulse current2)
-
IS
TC=25°C
TC=25°C
IS,pulse
-
A
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 9
Reverse diode dv/dt3)
dv/dt
dif/dt
-
-
-
-
-
-
-
-
-
15
V/ns
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 9
Maximum diode commutation speed
500
50
A/µs
Mounting torque (FullPAK)
TO-220FP
Ncm M2.5 screws
Insulation withstand voltage for
TO-220FP
VISO
2500
V
Vrms,ꢀTC=25°C,ꢀt=1min
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀ(FullPAK)ꢀTO-220FP
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
4
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
80
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
Tsold
-
-
260
°C
1.6mm (0.063 in.) from case for 10s
1) Limited by Tj max. TO252 equivalent,Maximum duty cycle D=0.50
2) Pulse width tp limited by Tj,max
3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG
Final Data Sheet
3
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
Tableꢀ4ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀꢀTO-252,ꢀTO-251
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
1.12
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction - ambient
for SMD version
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
RthJA
-
-
35
-
45
°C/W
Soldering temperature, wave & reflow
soldering allowed
Tsold
260
°C
reflow MSL3
Final Data Sheet
4
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ5ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
2.5
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
V
V
VGS=0V,ꢀID=0.25mA
VDS=VGS,ꢀID=0.3mA
3.0
3.5
-
-
-
10
1
-
VDS=600,ꢀVGS=0V,ꢀTj=25°C
VDS=600,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.34
0.89
0.40
-
VGS=10V,ꢀID=3.8A,ꢀTj=25°C
VGS=10V,ꢀID=3.8A,ꢀTj=150°C
RDS(on)
RG
-
7.5
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ6ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
700
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=100V,ꢀf=1MHz
VGS=0V,ꢀVDS=100V,ꢀf=1MHz
Coss
46
Effective output capacitance,
energy related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
30
136
11
9
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...480V
Effective output capacitance,
time related2)
ID=constant,ꢀVGS=0V,ꢀVDS=0...480V
VDD=400V,ꢀVGS=13V,ꢀID=4.8A,
RG=3.4Ω;ꢀseeꢀtableꢀ10
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=4.8A,
RG=3.4Ω;ꢀseeꢀtableꢀ10
VDD=400V,ꢀVGS=13V,ꢀID=4.8A,
RG=3.4Ω;ꢀseeꢀtableꢀ10
Turn-off delay time
Fall time
td(off)
tf
56
8
VDD=400V,ꢀVGS=13ꢀV,ꢀID=4.8A,
RG=3.4Ω;ꢀseeꢀtableꢀ10
Tableꢀ7ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
4
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=480V,ꢀID=4.8A,ꢀVGS=0ꢀtoꢀ10V
VDD=480V,ꢀID=4.8A,ꢀVGS=0ꢀtoꢀ10V
VDD=480V,ꢀID=4.8A,ꢀVGS=0ꢀtoꢀ10V
VDD=480V,ꢀID=4.8A,ꢀVGS=0ꢀtoꢀ10V
Qgd
16
Qg
32
Gate plateau voltage
Vplateau
5.4
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ80%ꢀVo(BR)DSS
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ80%ꢀVo(BR)DSS
Final Data Sheet
5
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
Tableꢀ8ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=4.8A,ꢀTj=25°C
VR=400V,ꢀIF=4.8A,ꢀdiF/dt=100A/µs;
see table 9
-
-
-
290
3.3
21
-
-
-
ns
VR=400V,ꢀIF=4.8A,ꢀdiF/dt=100A/µs;
see table 9
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=4.8A,ꢀdiF/dt=100A/µs;
see table 9
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipationꢀ(NonꢀFullPAK)
Diagramꢀ2:ꢀPowerꢀdissipationꢀ(FullPAK)
120
35
110
100
90
80
70
60
50
40
30
20
10
0
30
25
20
15
10
5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
Ptot=f(TC)
Diagramꢀ3:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(NonꢀFullPAK) Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(FullPAK)
101
101
0.5
0.2
100
100
0.5
0.1
0.2
0.1
0.05
0.02
0.05
0.02
10-1
10-1
0.01
single pulse
0.01
single pulse
10-2
10-2
10-5
10-4
10-3
10-2
10-1
10-5
10-4
10-3
10-2
10-1
100
101
tpꢀ[s]
tpꢀ[s]
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
Diagramꢀ5:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)
Diagramꢀ6:ꢀSafeꢀoperatingꢀareaꢀ(FullPAK)
102
102
1 µs
1 µs
10 µs
100 µs
101
100
10 µs
101
100 µs
1 ms
10 ms
1 ms
100
DC
DC
10-1
10-2
10-3
10-4
10-1
10-2
10-3
100
101
102
103
100
101
102
103
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ7:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)
Diagramꢀ8:ꢀSafeꢀoperatingꢀareaꢀ(FullPAK)
102
102
1 µs
1 µs
101
10 µs
100 µs
101
10 µs
100 µs
1 ms
10 ms
100
10-1
10-2
10-3
10-4
1 ms
100
10-1
10-2
10-3
DC
DC
100
101
102
103
100
101
102
103
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Final Data Sheet
8
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
Diagramꢀ9:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀoutputꢀcharacteristics
30
20
20 V
20 V
10 V
10 V
8 V
25
8 V
15
10
5
7 V
20
7 V
6 V
15
5.5 V
6 V
10
5 V
5.5 V
5
4.5 V
5 V
4.5 V
0
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ11:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ12:ꢀDrain-sourceꢀon-stateꢀresistance
1.5
1.00
1.4
1.3
1.2
0.90
0.80
0.70
5 V
6.5 V
7 V
5.5 V 6 V
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.60
98%
typ
10 V
0.50
0.40
0.30
0.20
0.10
0
5
10
15
20
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=3.8ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
9
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
Diagramꢀ13:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
30
10
25 °C
9
8
7
6
5
4
3
2
1
0
25
20
120 V
480 V
150 °C
15
10
5
0
0
2
4
6
8
10
12
0
5
10
15
20
25
30
35
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=4.8ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ16:ꢀAvalancheꢀenergy
102
225
25 °C
125 °C
200
175
150
125
100
75
101
100
50
25
10-1
0
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=1.8ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
10
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
Diagramꢀ17:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ18:ꢀTyp.ꢀcapacitances
700
104
680
660
640
620
600
580
560
540
520
103
Ciss
102
Coss
101
Crss
100
-75 -50 -25
0
25
50
75 100 125 150 175
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=0.25ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
Diagramꢀ19:ꢀTyp.ꢀCossꢀstoredꢀenergy
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
11
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ9ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
VDS
Rg1
VDS(peak)
VDS
trr
VDS
IF
tF
tS
dIF / dt
Rg 2
IF
t
10%Irrm
Q
F
Q
S
IF
dI / dt
rr
trr =tF +tS
rr
Irrm
Q =QF +Q
S
Rg1 = Rg 2
Tableꢀ10ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ11ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
12
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
6ꢀꢀꢀꢀꢀPackageꢀOutlines
*) mold flash not included
MILLIMETERS
DIM
INCHES
MIN
2.16
0.00
0.64
0.65
5.00
0.46
0.46
5.97
5.02
6.40
4.70
MAX
2.41
0.15
0.89
1.15
5.50
0.60
0.98
6.22
5.84
6.73
5.60
MIN
MAX
0.095
0.006
0.035
0.045
0.217
0.024
0.039
0.245
0.230
0.265
0.220
A
A1
b
0.085
0.000
0.025
0.026
0.197
0.018
0.018
0.235
0.198
0.252
0.185
b2
b3
c
DOCUMENT NO.
Z8B00003328
0
c2
D
SCALE
D1
E
2.0
0
2.0
E1
e
2.29 (BSC)
0.090 (BSC)
0.180 (BSC)
3
4mm
4.57 (BSC)
3
e1
N
EUROPEAN PROJECTION
H
9.40
1.18
0.90
0.51
10.48
0.370
0.046
0.035
0.020
0.413
L
1.70
1.25
1.00
0.067
0.049
0.039
L3
L4
F1
F2
F3
F4
F5
F6
0.417
0.252
0.087
0.228
0.227
0.047
10.60
6.40
2.20
5.80
5.76
1.20
ISSUE DATE
01-09-2015
REVISION
05
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ252,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
13
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
DOCUMENT NO.
Z8B00003329
MILLIMETERS
DIM
INCHES
0
MIN
2.18
0.80
0.64
0.65
4.95
0.46
0.46
5.97
5.04
6.35
4.60
MAX
2.40
1.14
0.89
1.15
5.50
0.59
0.89
6.22
5.55
6.73
5.21
MIN
MAX
0.094
0.045
0.035
0.045
0.217
0.023
0.035
0.245
0.219
0.265
0.205
SCALE
A
A1
b
0.086
0.031
0.025
0.026
0.195
0.018
0.018
0.235
0.198
0.250
0.181
2.0
0
2.0
b2
b4
c
4mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29
4.57
3
0.090
0.180
3
e1
N
ISSUE DATE
21-10-2015
L
3.00
0.80
0.88
3.60
1.25
1.28
0.118
0.031
0.035
0.142
0.049
0.050
REVISION
L1
L2
06
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ251,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
14
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
DIM
MIN
4.50
2.34
2.42
0.65
0.95
1.20
0.65
1.20
0.40
MAX
4.90
2.80
2.86
0.90
1.38
1.50
1.38
1.50
0.63
16.15
9.83
10.65
MIN
MAX
0.193
0.110
0.113
0.035
0.054
0.059
0.054
0.059
0.025
0.636
0.387
0.419
DOCUMENT NO.
Z8B00181328
A
A1
A2
b
0.177
0.092
0.095
0.026
0.037
0.047
0.026
0.047
0.016
0.617
0.353
0.394
0
SCALE
b1
b2
b3
b4
c
2.5
0
2.5
5mm
D
15.67
8.97
EUROPEAN PROJECTION
D1
E
10.00
2.54 (BSC)
0.100 (BSC)
e
e1
N
5.08
3
0.200
3
H
28.70
12.78
2.83
29.75
13.75
3.45
1.130
0.503
0.111
0.118
0.124
1.171
0.541
0.136
0.133
0.138
ISSUE DATE
29-04-2016
L
L1
¡3
Q
REVISION
01
3.00
3.38
3.15
3.50
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAK,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
15
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ12ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSTMꢀCEꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀCEꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀCEꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
16
Rev.ꢀ2.2,ꢀꢀ2016-08-08
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R400CE,ꢀIPS60R400CE,ꢀIPA60R400CE
RevisionꢀHistory
IPD60R400CE, IPS60R400CE, IPA60R400CE
Revision:ꢀ2016-08-08,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
Release of final version
2014-09-25
2016-03-31
Modified Id, Rthjc. Modified SOA & Zthjc curves. Added IPAK_SL package
Revised Full PAK package drawing on page 15, solder reflow info to MSL3 on page 4
and added Full PAK marking on page 1
2016-08-08
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
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respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
17
Rev.ꢀ2.2,ꢀꢀ2016-08-08
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