IPD65R420CFD [INFINEON]
650V CoolMOS C6 CFD Power Transistor; 650V的CoolMOS C6 CFD功率晶体管
| 型号： | IPD65R420CFD |
| 厂家： | 
Infineon |
| 描述： | 650V CoolMOS C6 CFD Power Transistor |
| 文件： | 总21页 (文件大小：7642K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6/CFD 650V
650V CoolMOS™ C6 CFD Power Transistor
IPx65R420CFD
Data Sheet Data Sheet
Rev. 2.0
Final
Industrial & Multimarket
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
TO-247
D²PAK
TO-220
I²PAK
1
Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. 650V CoolMOS™ CFD series
combines the experience of the leading SJ MOSFET supplier with high
class innovation. The resulting devices provide all benefits of a fast
switching SJ MOSFET while offering an extremely fast and robust body
diode. This combination of extremely low switching, commutation and
conduction losses together with highest robustness make especially
resonant switching applications more reliable, more efficient, lighter and
cooler.
TO-220 FP
DPAK
drain
pin 2
Features
• Ultra-fast body diode
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Easy to use/drive
gate
pin 1
• Qualified for industrial grade applications according to JEDEC
(J-STD20 and JESD22)
• Pb-free plating, Halogen free for mold compound
source
pin 3
Applications
650V CoolMOS™ CFD is especially suitable for resonant switching PWM
stages for e.g. PC Silverbox, LCD TV, Lighting, Server and Telecom
Table 1 Key Performance Parameters
Parameter
V‡» @ TÎ ÑÈà
RDS(on),max
Qg,typ
Value
650
0.42
32
Unit
V
Â
nC
A
ID,pulse
27
Eoss @ 400V
Body diode di/dt
Qrr
2.8
µJ
A/µs
µC
ns
A
900
0.3
trr
90
Irrm
6.2
Type / Ordering Code
IPW65R420CFD
IPB65R420CFD
IPP65R420CFD
IPA65R420CFD
IPD65R420CFD
IPI65R420CFD
Package
Marking
65F6420
Related Links
PG-TO 247
PG-TO 263
PG-TO 220
see Appendix A
PG-TO 220 FullPAK
PG-TO 252
PG-TO 262
Final Data Sheet
Rev. 2.0, 2011-04-26
2
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Final Data Sheet
Rev. 2.0, 2011-04-26
3
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
2
Maximum ratings
at TÎ = 25°C, unless otherwise specified
Table 2 Maximum ratings
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current1)
I‡
8.7
5.5
27
A
T† = 25°C
T† = 100°C
T† = 25°C
Pulsed drain current2)
I‡‚ÔÛÐÙþ
Eƒ»
A
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
227
0.3
1.8
50
mJ I‡ = 1.8A, V‡‡ = 50V
mJ I‡ = 1.8A, V‡‡ = 50V
A
Eƒ¸
Iƒ¸
dv/dt
V•»
V/ns V‡» = 0 ... 480V
-20
-30
20
30
V
static
AC (f > 1 Hz)
Power dissipation for
TO-247, TO-220, I²PAK
PÚÓÚ
83.3
W
T† = 25°C
T† = 25°C
Power dissipation for
TO-220 FP
PÚÓÚ
31.25 W
Operating and storage temperature
T΂TÙÚÃ
-55
150
60
°C
Mounting torque for
TO-247, TO-220, I²PAK
Ncm M3 and M3.5 screws
Ncm M2.5 screws
Mounting torque for
TO-220 FP
50
Continuous diode forward current
Diode pulse current
I»
8.7
27
A
T† = 25°C
T† = 25°C
I»‚ÔÛÐÙþ
dv/dt
diË/dt
A
Reverse diode dv/dt3)
50
V/ns
A/µs
V‡» = 0 ... 480V, I»‡ ù I‡,
TÎ = 25°C
Maximum diode commutation speed
900
1) Limited by TÎ ÑÈà.
2) Pulse width tÔ limited by TÎ ÑÈà
3) I»‡ ù I‡, di/dt=900A/µs, V‡†ÐÍÒÏ=400V, VÔþÈÏ<Vñ…¸ò‡»»; TÎ<TÎ ÑÈà, identical low and high side switch
Final Data Sheet
Rev. 2.0, 2011-04-26
4
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
3
Thermal characteristics
Table 3 Thermal characteristics TO-247, TO-220, I²PAK
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Thermal resistance, junction - case
Thermal resistance, junction - ambient
RÚÌœ†
RÚÌœƒ
1.5
62
°C/W
°C/W leaded
Soldering temperature, wavesoldering only
allowed at leads
1.6 mm (0.063 in.) from case for
10s
TÙÓÐÁ
260
°C
Table 4 Thermal characteristics TO-220 FP
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Thermal resistance, junction - case
Thermal resistance, junction - ambient
RÚÌœ†
RÚÌœƒ
4
°C/W
80
°C/W leaded
Soldering temperature, wavesoldering only
allowed at leads
1.6 mm (0.063 in.) from case for
10s
TÙÓÐÁ
260
°C
Table 5 Thermal characteristics D²PAK, DPAK
Values
Min. Typ. Max.
1.5
Parameter
Symbol
Unit Note / Test Condition
Thermal resistance, junction - case
RÚÌœ†
RÚÌœƒ
°C/W
SMD version, device on PCB,
minimal footprint
Thermal resistance, junction - ambient1)
62
°C/W
Soldering temperature, wave- &
reflowsoldering allowed
TÙÓÐÁ
260
°C
reflow MSL
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
Rev. 2.0, 2011-04-26
5
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
4
Electrical characteristics
at TÎ = 25°C, unless otherwise specified
Table 6 Static characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage
Gate threshold voltage
Vñ…¸ò‡»» 650
V
V•» = 0V, I‡ = 1mA
V•»ñÚÌò
I‡»»
3.5
4
4.5
5
V
V‡» = V•», I‡ = 0.34mA
V‡» = 650V, V•» = 0V, TÎ = 25°C
Zero gate voltage drain current
µA
V‡» = 650V, V•» = 0V,
TÎ = 150°C
600
Gate-source leakage current
I•»»
100
nA
Â
V•» = 20V, V‡» = 20V
Drain-source on-state resistance 25
R‡»ñÓÒò
0.378 0.42
V•» = 10V, I‡ = 3.4A, TÎ = 25°C
V•» = 10V, I‡ = 3.4A, TÎ = 150°C
f•» = 1Mhz, open drain
0.9828
4
Gate resistance
R•
Â
Table 7 Dynamic characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Input capacitance
CÍÙÙ
870
45
pF
pF
V•» = 0V, V‡» = 100V, f = 1Mhz
Output capacitance
CÓÙÙ
Effective output capacitance, energy
related1)
CÓñþØò
30
pF
pF
V•» = 0V, V‡» = 0 ... 480V
V•» = constant, V‡» = 0V,
V‡» = 0 ... 480V
Effective output capacitance, time related2) CÓñÚØò
138
Turn-on delay time
Rise time
tÁñÓÒò
tØ
10
7
ns
ns
ns
ns
V‡‡ = 400V, V•» = 13V,
I‡ = 5.2A, R• = 3.4Â
Turn-off delay time
Fall time
tÁñÓËËò
tË
38
8
Table 8 Gate charge characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Gate to source charge
Gate to drain charge
Gate charge total
QÃÙ
5.5
17.5
32
nC
nC
nC
V
V‡‡ = 480V, I‡ = 5.2A,
V•» = 0 to 10V
QÃÁ
QÃ
Gate plateau voltage
VÔÐÈÚþÈÛ
6.4
1) CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 80% Vñ…¸ò‡»»
2) CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 80% Vñ…¸ò‡»»
Final Data Sheet
Rev. 2.0, 2011-04-26
6
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
Table 9 Reverse diode characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Diode forward voltage
V»‡
tØØ
0.9
90
V
V•» = 0V, IŒ = 5.2A, TÎ = 25°C
Reverse recovery time
ns
µC
A
V¸ = 400V, IŒ = 5.2A,
diŒ/dt = 100A/µs
Reverse recovery charge
Peak reverse recovery current
QØØ
IØØÑ
0.3
6.2
Final Data Sheet
Rev. 2.0, 2011-04-26
7
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
5
Electrical characteristics diagrams
Table 10
Power dissipation (Non FullPAK)
Power dissipation (FullPAK)
90
40
36
32
28
24
20
80
70
60
50
40
P
P
P
P
PP
PP
16
12
8
30
20
10
0
4
0
0
40
80
TC [°C]
120
160
0
40
80
TC [°C]
120
160
Ptot=f(TC)
Ptot=f(TC)
Table 11
Max. transient thermal impedance (Non FullPAK)
Max. transient thermal impedance (FullPAK)
101
101
0.5
0.5
0.2
0.1
0.2
0.1
0.05
0.05
100
100
0.02
0.02
0.01
0.01
single pulse
single pulse
Z
Z
Z
Z
ZZ
ZZ
10-1
10-1
10-2
10-2
10-5
10-4
10-3
tp [s]
10-2
10-1
10-5
10-4
10-3
10-2
tp [s]
10-1
100
ZthJC =f(tP); parameter: D=tp/T
Final Data Sheet
ZthJC =f(tP); parameter: D=tp/T
Rev. 2.0, 2011-04-26
8
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
Table 12
Safe operating area (Non FullPAK) Tj = 25 °C
Safe operating area (FullPAK) Tj = 25 °C
103
102
1 µs
102
101
101
10 µs
1 µs
100 µs
10 µs
100 µs
1 ms
10 ms
DC
1 ms
100
10-1
10-2
I
I
I
I
II
II
10 ms
100
10-1
10-2
DC
100
101
102
103
100
101
102
103
VDS [V]
VDS [V]
ID=f(VDS); TC=25 °C; D=0; parameter: tp; Vgs>7.5V;
ID=f(VDS); TC=25 °C; D=0; parameter: tpVgs>7.5V;
Table 13
Safe operating area (Non FullPAK) Tj = 80 °C
Safe operating area (FullPAK) Tj = 80 °C
103
102
1 µs
102
101
10 µs
1 µs
101
100
100 µs
10 µs
100 µs
1 ms
10 ms
DC
100
1 ms
I
I
I
I
II
II
10 ms
10-1
DC
10-1
10-2
10-2
100
101 102
VDS [V]Vgs>7.5V;
103
100
101
102
103
VDS [V]
ID=f(VDS); TC=80 °C; D=0; parameter: tp; Vgs>7.5V;
ID=f(VDS); TC=80 °C; D=0; parameter: tp; Vgs>7.5V;
Final Data Sheet
Rev. 2.0, 2011-04-26
9
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
Table 14
Typ. output characteristics Tj = 25°C
Typ. output characteristics Tj = 125°C
35
20
20 V
20 V
18
10 V
10 V
30
8 V
8 V
16
7 V
7 V
25
14
6 V
6 V
12
5.5 V
5.5 V
20
5 V
5 V
10
I
I
I
I
II
II
4.5 V
4.5 V
15
10
5
8
6
4
2
0
0
0
5
10
VDS [V]
15
20
0
5
10
VDS [V]
15
20
ID=f(VDS); Tj=25 °C; parameter: VGS
ID=f(VDS); Tj=125 °C; parameter: VGS
Table 15
Typ. drain-source on-state resistance
Drain-source on-state resistance
2.0
1.2
1.0
0.8
0.6
1.5
98%
typ
1.0
5 V 5.5 V 6 V 6.5 V 7 V
10 V
R
R
R
R
RR
RR
0.4
0.2
0.0
0.5
0.0
0
4
8
12
16
20
-60
-20
20
60
Tj [°C]
100
140
180
ID [A]
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); ID=3.4 A; VGS=10 V
Final Data Sheet
Rev. 2.0, 2011-04-26
10
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
Table 16
Typ. transfer characteristics
Typ. gate charge
30
10
9
120 V
480 V
25
20
15
150 °C
8
7
6
5
4
3
2
1
0
I
I
I
I
25 °C
V
V
V
V
10
5
0
0
2
4
6
8
10
0
10
20
Qgate [nC]
30
40
VGS [V]
ID=f(VGS); |VDS|>2|ID|RDS(on)max; parameter: Tj
VGS=f(Qgate); ID=3.4 A pulsed; parameter: VDD
Table 17
Avalanche energy
Drain-source breakdown voltage
1200
760
740
720
700
680
660
640
1000
800
600
E
E
E
E
V
V
V
V
620
600
580
560
540
400
200
0
0
50
100
Tj [°C]
150
200
-60
-20
20
60
Tj [°C]
100
140
180
EAS=f(Tj); ID=1.8 A; VDD=50 V
VBR(DSS)=f(Tj); ID=0.25 mA
Final Data Sheet
Rev. 2.0, 2011-04-26
11
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
Table 18
Typ. capacitances
Typ. Coss stored energy
104
6
5
Ciss
103
25°C
4
3
102
C
C
C
C
E
E
E
E
Coss
Crss
2
1
0
101
100
0
100
200
300
VDS [V]
400
500
600
0
100
200
300
VDS [V]
400
500
600
C=f(VDS); VGS=0 V; f=1 MHz
Eoss=f(VDS)
Table 19
Forward characteristics of reverse diode
102
101
125 °C
25 °C
I
I
I
I
100
10-1
0.0
1.0
2.0
3.0
VSD [V]
IF=f(VSD); parameter: Tj
Final Data Sheet
Rev. 2.0, 2011-04-26
12
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
6
Test Circuits
Table 20 Diode_characteristics
Test circuit for diode characteristics
Diode recovery waveform
ID
RG1
VDS
RG2
RG1 = RG2
Table 21 Switching_times
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Table 22 Unclamped_inductive
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
VD
ID
VDS
VDS
VDS
ID
Final Data Sheet
Rev. 2.0, 2011-04-26
13
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
7
Package Outlines
Figure 1 Outline PG-TO 247, dimensions in mm/inches
Final Data Sheet
Rev. 2.0, 2011-04-26
14
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
Figure 2 Outline PG-TO 263, dimensions in mm/inches
Final Data Sheet
Rev. 2.0, 2011-04-26
15
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
Figure 3 Outline PG-TO 220, dimensions in mm/inches
Final Data Sheet
Rev. 2.0, 2011-04-26
16
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
Figure 4 Outline PG-TO 220 FullPAK, dimensions in mm/inches
Final Data Sheet
Rev. 2.0, 2011-04-26
17
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
Figure 5 Outline PG-TO 252, dimensions in mm/inches
Final Data Sheet
Rev. 2.0, 2011-04-26
18
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
Figure 6 Outline PG-TO 262, dimensions in mm/inches
Final Data Sheet
Rev. 2.0, 2011-04-26
19
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
8
Appendix A
Table 23 Related Links
IFX Design Tools:
•
http://www.infineon.com/cms/en/product/promopages/designtools/index.html
IFX CoolMOS Webpage:
•
http://www.infineon.com/cms/en/product/channel.html?channel=ff80808112ab681d0112ab6a628704d8
Final Data Sheet
Rev. 2.0, 2011-04-26
20
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD
IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
650V CoolMOS™ C6 CFD Power Transistor
Revision History
IPW65R420CFD , IPB65R420CFD , IPP65R420CFD , IPA65R420CFD , IPD65R420CFD , IPI65R420CFD
Revision: 2011-04-26, Rev. 2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final datasheet
-
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Edition 2009-08-27
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Final Data Sheet
Rev. 2.0, 2011-04-26
21
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