IPD80R2K7C3A [INFINEON]
电动汽车领域，例如插电充电型混合动力汽车(PHEV)和纯电动汽车(BEV)），对更高系统电压的需求日益增长，CoolMOS™ C3A 技术就是专为满足这种需求而设计的。;
| 型号： | IPD80R2K7C3A |
| 厂家： | 
Infineon |
| 描述： | 电动汽车领域，例如插电充电型混合动力汽车(PHEV)和纯电动汽车(BEV)），对更高系统电压的需求日益增长，CoolMOS™ C3A 技术就是专为满足这种需求而设计的。 |
| 文件： | 总10页 (文件大小：510K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
IPD80R2k7C3A
CoolMOSTM Power Transistor
Features
Product Summary
VDS
800
2.7
12
V
• New revolutionary high voltage technology
• Extreme dv/dt rated
RDS(on)max @ Tj = 25°C
W
Qg,typ
nC
• High peak current capability
• Qualified according to AEC Q101
• Green package (RoHS compliant), Pb-free lead plating, halogen free for mold compound
PG-TO252-3
• Ultra low gate charge
• Ultra low effective capacitances
CoolMOSTM 800V designed for:
• Automotive application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Type
Package
Marking
IPD80R2k7C3A
PG-TO252-3
80C2k7A
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
2
1.2
Continuous drain current
A
T C=100 °C
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C
6
I D=1 A, V DD=50 V
I D=2 A, V DD=50 V
Avalanche energy, single pulse
90
mJ
2),3)
2),3)
E AR
0.05
2
Avalanche energy, repetitive t AR
I AR
A
Avalanche current, repetitive t AR
MOSFET dv /dt ruggedness
Gate source voltage
V DS=0…640 V
static
50
dv /dt
V GS
V/ns
V
±20
±30
42
AC (f >1 Hz)
T C=25 °C
P tot
Power dissipation
W
-40 ... 150
Operating, Storage temperature
Tj,Tstg
°C
Final Data Sheet, Rev. 1.1
page 1
2013-11-21
IPD80R2k7C3A
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I S
2
6
4
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
A
T C=25 °C
I S,pulse
dv /dt
V/ns
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
3
K/W
SMD version, device
on PCB, minimal
footprint
R thJA
62
Thermal resistance, junction -
ambient
SMD version, device
on PCB, 6 cm2 cooling
area5)
-
-
35
-
-
Soldering temperature, reflow
soldering
T sold
reflow MSL1
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage1)
V (BR)DSS V GS=0 V, I D=250 µA
800
-
-
870
3
-
-
V
V (BR)DS V GS=0 V, I D=2 A
V GS(th) V DS=V GS, I D=0.12 mA
Avalanche breakdown voltage
Gate threshold voltage
2.1
3.9
V DS=800 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
5
-
µA
V DS=800 V, V GS=0 V,
T j=150 °C
-
-
-
25
-
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
100 nA
V GS=10 V, I D=1.2 A,
T j=25 °C
R DS(on)
Drain-source on-state resistance
2.4
2.7
W
V GS=10 V, I D=1.2 A,
T j=150 °C
-
-
5.5
1.2
-
-
R G
Gate resistance
f =1 MHz, open drain
W
Final Data Sheet, Rev. 1.1
page 2
2013-11-21
IPD80R2k7C3A
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
-
-
290
13
-
-
pF
V GS=0 V, V DS=100 V,
f =1 MHz
C oss
Effective output capacitance, energy
related6)
C o(er)
-
-
11
26
-
-
V GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related7)
C o(tr)
t d(on)
t r
t d(off)
t f
Turn-on delay time
Rise time
-
-
-
-
25
15
72
18
-
-
-
-
ns
V DD=400 V,
V GS=0/10 V, I D=2 A,
R G,ext=47 Ω, T j=25 °C
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
1.5
6
-
-
nC
Q gd
V DD=640 V, I D=2 A,
V GS=0 to 10 V
Q g
12
5.5
16
-
V plateau
Gate plateau voltage
V
V
Reverse Diode
V GS=0 V, I F=I S=2 A,
T j=25 °C
V SD
Diode forward voltage
-
1
1.2
t rr
Reverse recovery time
-
-
-
520
2
-
-
-
ns
µC
A
V R=400 V, I F=I S=2 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
I rrm
Peak reverse recovery current
6
1) For applications with applied blocking voltage > 65% of the specified blocking voltage, we recommend to evaluate
the impact of the cosmic radiation effect in early design phase. For assessment please contact local Infineon sales
office.
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
I
≤ID, di/dt≤400A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
SD
5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection.
PCB is vertical without blown air
6)
C
is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
o(er)
7)
C
is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
o(tr)
Final Data Sheet, Rev. 1.1
page 3
2013-11-21
IPD80R2k7C3A
2 Safe operating area 1)
1 Power dissipation
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0, Parameter: tp
DC curve indicates operation at thermal equilibrated state, not
guaranteed over lifetime.
10
50
40
30
20
10
0
limited by on-state
1 µs
resistance
10 µs
100 µs
1 ms
1
5 ms
0.1
DC
0.01
0.001
1
10
100
1000
0
25
50
75
TC [°C]
100
125
150
VDS [V]
3 Max. transient thermal impedance
ZthJC=f(tP)
4 Typ. output characteristics
I D=f(V DS); T j=25 °C; t p=10 µs
parameter: V GS
parameter: D=t p/T
101
7
6
5
20 V
10 V
0.5
4
3
2
1
0
100
0.2
6.5 V
6 V
0.1
0.05
0.02
5.5 V
5 V
0.01
single pulse
10-1
10-5
10-4
10-3
10-2
10-1
0
5
10
15
20
25
tp [s]
VDS [V]
Final Data Sheet, Rev. 1.1
page 4
2013-11-21
IPD80R2k7C3A
5 Typ. output characteristics
I D=f(V DS); T j=150 °C; t p=10 µs
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
3
2.5
2
9
8.6
8.2
7.8
7.4
7
20 V
6 V
10 V
20 V
5.5 V
10 V
6 V
1.5
5 V
6.6
1
5.5 V
6.2
5.8
5.4
5
5 V
4.5 V
4 V
4.5 V
0.5
0
0
5
10
15
VDS [V]
20
25
0
1
2
3
4
5
6
ID [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=1.2 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 µs
parameter: T j
5.6
4.8
7
25 °C
6
5
4
3
2
1
0
98 %
4
3.2
2.4
150 °C
typ
1.6
0.8
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
Tj [°C]
VGS [V]
Final Data Sheet, Rev. 1.1
page 5
2013-11-21
IPD80R2k7C3A
9 Typ. gate charge
V GS=f(Q gate); I D=2 A pulsed
parameter: V DD
10 Forward characteristics of reverse diode
I F=f(V SD); t p=10 µs
parameter: T j
102
101
100
10-1
10
160 V
8
150 °C
640 V
25°C (98°C)
6
150°C (98%)
4
25 °C
2
0
0
0.5
1
1.5
2
0
2
4
6
8
10
12
14
Qgate [nC]
VSD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=1 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
absolut
80
960
920
880
840
800
760
720
680
60
40
20
0
25
50
75
100
Tj [°C]
125
150
-60
-20
20
60
100
140
180
Tj [°C]
Final Data Sheet, Rev. 1.1
page 6
2013-11-21
IPD80R2k7C3A
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
103
2.5
Ciss
2
1.5
1
102
Coss
101
Crss
0.5
100
0
0
0
100
200
300
400
500
100 200 300 400 500 600 700 800
VDS [V]
VDS [V]
Final Data Sheet, Rev. 1.1
page 7
2013-11-21
IPD80R2k7C3A
Definition of diode switching characteristics
Final Data Sheet, Rev. 1.1
page 8
2013-11-21
IPD80R2k7C3A
PG-TO252-3: Outline
dimensions in mm/inches
Final Data Sheet, Rev. 1.1
page 9
2013-11-21
IPD80R2k7C3A
Revision 2013-11-21, Rev. 1.1, Final Data Sheet
Disclaimer ATV
We listen to your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback
will help us to continously improve the quality of this document. Please send your proposal
(including a reference to this document) to: erratum@infineon.com.
Edition 2011-09-30
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Final Data Sheet, Rev. 1.1
page 10
2013-11-21
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