IPDQ60R040S7A [INFINEON]

The automotive qualified AEC-Q101, 600 V CoolMOS™ S7A SJ MOSFET family is optimized to offer low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for HV eFuse, HV eDisconnect and on-board charger PFC stage in an active line configuration.;


型号：	IPDQ60R040S7A
厂家：	Infineon
描述：	The automotive qualified AEC-Q101, 600 V CoolMOS™ S7A SJ MOSFET family is optimized to offer low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for HV eFuse, HV eDisconnect and on-board charger PFC stage in an active line configuration. 功率因数校正
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中文：	中文翻译
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IPDQ60R040S7A

MOSFET

PG-HDSOP-22

600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice

IPDQ60R040S7AꢀisꢀaꢀhighꢀvoltageꢀpowerꢀMOSFET,ꢀdesignedꢀasꢀstatic

switchꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀpioneeredꢀbyꢀInfineon

Technologies.

TAB

IPDQ60R040S7AꢀcombinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJꢀMOSFET

supplierꢀwithꢀhighꢀclassꢀinnovationꢀenablingꢀlowꢀR_DS(on)ꢀinꢀQDPAKꢀpackage.

TheꢀS7Aꢀseriesꢀisꢀoptimisedꢀforꢀlowꢀfrequencyꢀswitchingꢀandꢀhighꢀcurrent

applicationꢀlikeꢀcircuitꢀbreakers.

Features

•ꢀOptimizedꢀforꢀlowꢀswitchingꢀfrequencyꢀinꢀhigh-endꢀapplicationsꢀ(circuit

breakersꢀandꢀdiodeꢀparalleling/replacementꢀinꢀbridgeꢀrectifiers).

•ꢀꢀS7AꢀtechnologyꢀenablesꢀbestꢀinꢀclassꢀR_DS(on)ꢀinꢀsmallestꢀfootprint.

•ꢀKelvinꢀSourceꢀpinꢀimprovesꢀswitchingꢀperformanceꢀatꢀhighꢀcurrent.

•ꢀQDPAKꢀ(PG-HDSOP-22-1)ꢀpackageꢀisꢀMSL1ꢀcompliant,ꢀtotalꢀPb-free

andꢀsuitableꢀforꢀstandardꢀPCBꢀassemblingꢀflow.

Drain

Pin 12-22, Tab

Gate

Pin 1

Driver

Source

Pin 2

Power

Source

Pin 3-11

Benefits

*1: Internal body diode

•ꢀS7AꢀenablingꢀlowꢀR_DS(on)ꢀforꢀhighꢀconstantꢀcurrent.

•ꢀIncreasedꢀperformanceꢀbyꢀusingꢀMOSFETꢀinsteadꢀofꢀdiodeꢀinꢀthe

applicationꢀ(e.g.ꢀsynchronousꢀrectification).

•ꢀS7Aꢀcanꢀreachꢀ40mΩꢀinꢀaꢀcompactꢀfootprint.

•ꢀReducedꢀparasiticꢀsourceꢀinductanceꢀbyꢀKelvinꢀSourceꢀimprovesꢀstability

forꢀextremeꢀhighꢀcurrentꢀhandlingꢀandꢀeaseꢀofꢀuseꢀdueꢀtoꢀlessꢀringing.

•ꢀImprovedꢀthermalsꢀenableꢀSMDꢀQDPAKꢀpackageꢀtoꢀbeꢀusedꢀinꢀhigh

currentꢀdesigns.

Potentialꢀapplications

Circuitꢀbreakersꢀ(HVꢀBatteryꢀdisconnectꢀswitch,ꢀDCꢀandꢀACꢀlowꢀfrequency

switch,ꢀHVꢀE-fuse)ꢀandꢀdiodeꢀparalleling/replacementꢀforꢀhigh

power/performanceꢀapplications.

Productꢀvalidation

QualifiedꢀaccordingꢀtoꢀAECꢀQ101

Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.

Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.ꢀForꢀparallelingꢀ4pinꢀMOSFET

devicesꢀtheꢀplacementꢀofꢀtheꢀgateꢀresistorꢀisꢀgenerallyꢀrecommendedꢀtoꢀbe

onꢀtheꢀDriverꢀSourceꢀinsteadꢀofꢀtheꢀGate.ꢀForꢀproductionꢀpartꢀapproval

processꢀ(PPAP)ꢀreleaseꢀweꢀproposeꢀtoꢀshareꢀapplicationꢀrelated

informationꢀduringꢀanꢀearlyꢀdesignꢀphaseꢀtoꢀavoidꢀdelaysꢀinꢀPPAPꢀrelease.

PleaseꢀcontactꢀInfineonꢀsalesꢀoffice.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

R_DS(on),max

Q_g,typ

Value

Unit

mΩ

V_SD

0.82

207

Pulsed I_SD, I_DS

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPDQ60R040S7A

PG-HDSOP-22

60A040S7

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice

IPDQ60R040S7A

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice

IPDQ60R040S7A

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

T_C=140°C

Current is limited by T_{j max}= 150°C;

Lower case temp does increase

Drain current rating

I_D

current capability

Pulsed drain current¹⁾

I_D,pulse

E_AS

I_AS

207

159

2.8

T_C=25°C

Avalanche energy, single pulse

Avalanche current, single pulse

MOSFET dv/dt ruggedness²⁾

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation

I_D=2.8A; V_DD=50V; see table 10

dv/dt

V_GS

P_tot

V/ns V_DS=ꢀ0Vꢀtoꢀ300V

-20

-30

static

AC (f>1 Hz)

272

150

°C

T_C=25°C

Storage temperature

T_stg

T_j

-55

-40

Operating junction temperature

Extended operating junction

temperature

T_j

150

175

n.a.

°C

≤50 h in the application lifetime

Mounting torque

Ncm -

T_C=140°C

Current is limited by T_{j max}= 150°C;

Lower case temp does increase

current capability

Diode forward current rating

I_S

Diode pulse current¹⁾

Reverse diode dv/dt³⁾

I_S,pulse

207

T_C=25°C

V_DS=0ꢀtoꢀ300V,ꢀI_SD<=13A,ꢀT_j=25°Cꢀꢀꢀ

dv/dt

V/ns

see table 8

V_DS=0ꢀtoꢀ300V,ꢀI_SD<=13A,ꢀT_j=25°Cꢀꢀꢀ

Maximum diode commutation speed

Insulation withstand voltage

di_f/dt

1000 A/µs

n.a.

see table 8

V_ISO

V_rms,ꢀT_C=25°C,ꢀt=1min

¹⁾Pulse width t_plimited by T_j,max

²⁾The dv/dt has to be limited by appropriate gate resistor

³⁾Identical low side and high side switch

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice

IPDQ60R040S7A

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

0.46

Thermal resistance, junction - case

R_thJC

°C/W -

Thermal resistance, junction - ambient R_thJA

°C/W device on PCB, minimal footprint

Device on 40mm*40mm*1.5mm

epoxy PCB FR4 with 6cm² (one

°C/W layer, 70µm thickness) copper area.

Tap exposed to air. PCB is vertical

without air stream cooling.

Thermal resistance, junction - ambient

for SMD version

R_thJA

Soldering temperature, reflow soldering

allowed

T_sold

260

°C

reflow MSL1

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice

IPDQ60R040S7A

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

The CoolMOS mentioned in this datasheet shall not be operated in linear mode.

For any questions in this regard, please contact Infineon sales office.

For applications with applied blocking voltage >70% of the specified blocking voltage, it is required that the customer

evaluates the impact of cosmic radiation effect in early design phase and contacts the Infineon sales office for the

necessary technical support by Infineon

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

600

3.5

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_(GS)th

V_GS=0V,ꢀI_D=1mA

4.0

4.5

V_DS=V_GS,ꢀI_D=0.79mA

V_DS=600V,ꢀV_GS=0V,ꢀT_j=25°C

V_DS=600V,ꢀV_GS=0V,ꢀT_j=150°C

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

I_DSS

µA

Ω

I_GSS

100

V_GS=20V,ꢀV_DS=0V

0.036 0.040

0.084

V_GS=12V,ꢀI_D=13A,ꢀT_j=25°C

V_GS=12V,ꢀI_D=13A,ꢀT_j=150°C

R_DS(on)

R_G

0.8

Ω

f=1MHz,ꢀopenꢀdrain

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

External parasitic elements (PCB layout) influence switching behavior significantly.

Stray inductances and coupling capacitances must be minimized.

For layout recommendations please use provided application notes or contact Infineon sales office.

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

3128

Max.

Input capacitance

Output capacitance

C_iss

V_GS=0V,ꢀV_DS=300V,ꢀf=250kHz

C_oss

Effective output capacitance, energy

related¹⁾

C_o(er)

168

V_GS=0V,ꢀV_DS=0ꢀtoꢀ300V

Effective output capacitance, time

related²⁾

C_o(tr)

Q_oss

t_d(on)

1476

443

I_D=constant,ꢀV_GS=0V,ꢀV_DS=0ꢀtoꢀ300V

V_GS=0V,ꢀV_DS=0ꢀtoꢀ300V

Output charge

V_DD=300V,ꢀV_GS=13V,ꢀI_D=13A,

R_G=8.0Ω;ꢀseeꢀtableꢀ9

Turn-on delay time

V_DD=300V,ꢀV_GS=13V,ꢀI_D=13A,

R_G=8.0Ω;ꢀseeꢀtableꢀ9

Rise time

t_r

V_DD=300V,ꢀV_GS=13V,ꢀI_D=13A,

R_G=8.0Ω;ꢀseeꢀtableꢀ9

Turn-off delay time

Fall time

t_d(off)

t_f

120

V_DD=300V,ꢀV_GS=13V,ꢀI_D=13A,

R_G=8.0Ω;ꢀseeꢀtableꢀ9

¹⁾ꢀC_o(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V

²⁾ꢀC_o(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice

IPDQ60R040S7A

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

V_DD=300V,ꢀI_D=13A,ꢀV_GS=0ꢀtoꢀ12V

Q_gd

Q_g

Gate plateau voltage

V_plateau

5.4

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Diode forward voltage

Reverse recovery time

V_SD

t_rr

0.82

V_GS=0V,ꢀI_F=13A,ꢀT_j=25°C

V_R=300V,ꢀI_F=13A,ꢀdi_F/dt=100A/µs;

see table 8

360

5.5

V_R=300V,ꢀI_F=13A,ꢀdi_F/dt=100A/µs;

see table 8

Reverse recovery charge

Q_rr

I_rrm

µC

V_R=300V,ꢀI_F=13A,ꢀdi_F/dt=100A/µs;

see table 8

Peak reverse recovery current

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice

IPDQ60R040S7A

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams

Diagramꢀ1:ꢀPowerꢀdissipation

Diagramꢀ2:ꢀSafeꢀoperatingꢀarea

300

10³

250

200

150

100

10²

10¹

1 µs

10 µs

10⁰

100 µs

1 ms

10^-1

10^-2

10^-3

10 ms

100

125

150

10⁰

10¹

10²

10³

T_Cꢀ[°C]

V_DSꢀ[V]

P_tot=f(T_C)

I_D=f(V_DS);ꢀT_C=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance

10³

10⁰

10²

10¹

1 µs

0.5

10 µs

0.2

10⁰

10^-1

100 µs

0.1

10^-1

10^-2

10^-3

1 ms

0.05

0.02

0.01

10 ms

single pulse

10^-2

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

V_DSꢀ[V]

t_pꢀ[s]

I_D=f(V_DS);ꢀT_C=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Z_thJCꢀ=f(t_P);ꢀparameter:ꢀD=t_p/T

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice

IPDQ60R040S7A

Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics

Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics

350

200

20 V

12 V

300

12 V

10 V

150

100

10 V

250

200

150

100

8 V

V_DSꢀ[V]

I_D=f(V_DS);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

I_D=f(V_DS);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance

Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance

0.120

2.5

8 V

2.0

1.5

1.0

0.5

0.100

0.080

0.060

10 V

12 V

20 V

100

150

200

-50

-25

100

125

150

I_Dꢀ[A]

T_jꢀ[°C]

R_DS(on)=f(I_D);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

R_DS(on)=f(T_j);ꢀI_D=13ꢀA;ꢀV_GS=12ꢀV

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice

IPDQ60R040S7A

Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics

Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge

350

300

25 °C

300 V

250

200

120 V

150 °C

150

100

V_GSꢀ[V]

Q_gateꢀ[nC]

I_D=f(V_GS);ꢀV_DS=20V;ꢀparameter:ꢀT_j

V_GS=f(Q_gate);ꢀI_D=13ꢀAꢀpulsed;ꢀparameter:ꢀV_DD

Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode

Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode

10³

10²

25 °C

10¹

125 °C

25 °C

125 °C

10⁰

10^-1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V_SDꢀ[V]

I_F=f(V_SD);ꢀV_GS=0ꢀV;ꢀparameter:ꢀT_j

I_F=f(V_SD);ꢀV_GS=12ꢀV;ꢀparameter:ꢀT_j

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice

IPDQ60R040S7A

Diagramꢀ13:ꢀAvalancheꢀenergy

Diagramꢀ14:ꢀDrain-sourceꢀbreakdownꢀvoltage

200

680

660

640

620

600

580

560

540

150

100

125

150

-50

-25

100

125

150

T_jꢀ[°C]

E_AS=f(T_j);ꢀI_D=2.8ꢀA;ꢀV_DD=50ꢀV

V_BR(DSS)=f(T_j);ꢀI_D=1ꢀmA

Diagramꢀ15:ꢀTyp.ꢀcapacitances

Diagramꢀ17:ꢀTyp.ꢀQossꢀoutputꢀcharge

10⁵

500

10⁴

400

300

200

100

Ciss

10³

10²

Coss

Crss

10¹

10⁰

100

150

200

250

300

100

150

200

250

300

V_DSꢀ[V]

C=f(V_DS);ꢀV_GS=0ꢀV;ꢀf=250ꢀkHz

Q_oss=f(V_DS);ꢀV_GS=0ꢀV

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice

IPDQ60R040S7A

5ꢀꢀꢀꢀꢀTestꢀCircuits

Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics

Test circuit for diode characteristics

Diode recovery waveform

R_g1

V_DS

R_g2

I_F

R_g1 = R_g2

Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(ss)

Switching times test circuit for inductive load

Switching times waveform

V_DS

90%

10%

V_DS

V_GS

t_d(off)

t_f

t_d(on)

t_on

t_r

t_off

Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)

Unclamped inductive load test circuit

Unclamped inductive waveform

V_(BR)DS

I_D

V_DS

I_D

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice

IPDQ60R040S7A

6ꢀꢀꢀꢀꢀPackageꢀOutlines

DOCUMENT NO.

Z8B00184650

REVISION

MILLIMETERS

DIMENSIONS

MIN.

2.20

MAX.

2.35

SCALE 5:1

0.00

0.15

5mm

0.89

1.10

0.50

0.70

0.46

0.58

EUROPEAN PROJECTION

15.30

10.23

14.90

11.91

15.50

10.43

15.10

12.11

1.14

ISSUE DATE

16.01.2018

20.86

1.20

21.06

1.40

Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HDSOP-22,ꢀdimensionsꢀinꢀmm

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice

IPDQ60R040S7A

7ꢀꢀꢀꢀꢀAppendixꢀA

Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks

• IFXꢀCoolMOSꢀS7ꢀWebpage:ꢀwww.infineon.com

• IFXꢀCoolMOSꢀS7ꢀapplicationꢀnote:ꢀwww.infineon.com

• IFXꢀCoolMOSꢀS7ꢀsimulationꢀmodel:ꢀwww.infineon.com

• IFXꢀDesignꢀtools:ꢀwww.infineon.com

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice

IPDQ60R040S7A

RevisionꢀHistory

IPDQ60R040S7A

Revision:ꢀ2022-11-23,ꢀRev.ꢀ2.0

Previous Revision

Revision Date

Subjects (major changes since last revision)

Release of final version

2.0

2022-11-23

Trademarks

Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.

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erratum@infineon.com

Publishedꢀby

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InfineonꢀTechnologies,ꢀifꢀaꢀfailureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support

deviceꢀorꢀsystem,ꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀareꢀintended

toꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbody,ꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.

Ifꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

IPDQ60R040S7A [INFINEON]

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