IPF010N04NF2S [INFINEON]
Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 1.0 mOhm, addressing a broad range of applications from low- to high-switching frequency.;
| 型号： | IPF010N04NF2S |
| 厂家： | 
Infineon |
| 描述： | Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 1.0 mOhm, addressing a broad range of applications from low- to high-switching frequency. |
| 文件： | 总11页 (文件大小：1047K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPF010N04NF2S
MOSFET
StrongIRFETTM2ꢀPower-Transistor
PG-TO263-7
Features
•ꢀOptimizedꢀforꢀwideꢀrangeꢀofꢀapplications
•ꢀN-channel,ꢀnormalꢀlevel
tab
•ꢀ100%ꢀavalancheꢀtested
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
1
7
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
Drain
Pin 4, tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
Gate
Pin 1
VDS
40
V
RDS(on),max
ID
1.0
mΩ
A
Source
Pin 2,3,5,6,7
289
176
159
Qoss
nC
nC
QGꢀ(0V..10V)
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
010N04NS
RelatedꢀLinks
IPF010N04NF2S
PG-TO263-7
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2022-10-11
StrongIRFETTM2ꢀPower-Transistor
IPF010N04NF2S
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2022-10-11
StrongIRFETTM2ꢀPower-Transistor
IPF010N04NF2S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
-
-
-
-
-
-
289
223
46
Continuous drain current1)
ID
A
VGS=10ꢀV,ꢀTA=25ꢀ°C,
RTHJA=40ꢀ°C/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
1156
637
20
A
TA=25ꢀ°C
-
mJ
V
ID=100ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
-
-
-
250
3.8
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRTHJA=40ꢀ°C/W2)
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.6
°C/W -
°C/W -
Thermal resistance, junction - ambient,
6 cm² cooling area2)
-
-
-
-
40
62
Thermal resistance, junction - ambient,
minimal footprint
RthJA
°C/W -
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2022-10-11
StrongIRFETTM2ꢀPower-Transistor
IPF010N04NF2S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
40
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
2.1
2.8
3.4
VDS=VGS,ꢀID=189ꢀµA
-
-
0.1
10
1
100
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
0.87
0.98
1.0
1.47
VGS=10ꢀV,ꢀID=100ꢀA
VGS=6ꢀV,ꢀID=50ꢀA
RDS(on)
mΩ
Gate resistance
Transconductance1)
RG
gfs
-
2.5
-
-
-
Ω
-
220
S
|VDS|≥2|ID|RDS(on)max,ꢀID=100ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
11300 -
pF
pF
pF
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
Output capacitance
4130
210
-
-
Reverse transfer capacitance
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
23
50
67
31
-
-
-
-
ns
ns
ns
ns
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
47
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=20ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
32
-
30
-
Qsw
45
-
Gate charge total1)
Qg
159
4.2
239
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Vplateau
Qg(sync)
Qoss
-
-
-
142
176
nC
nC
VDS=20ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2022-10-11
StrongIRFETTM2ꢀPower-Transistor
IPF010N04NF2S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
204
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
1156
A
TC=25ꢀ°C
Diode forward voltage
0.83
44
1
-
V
VGS=0ꢀV,ꢀIF=100ꢀA,ꢀTj=25ꢀ°C
VR=20ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=500ꢀA/µs
VR=20ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=500ꢀA/µs
Reverse recovery time
Reverse recovery charge
ns
nC
Qrr
228
-
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2022-10-11
StrongIRFETTM2ꢀPower-Transistor
IPF010N04NF2S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
300
300
250
200
150
100
50
250
200
150
100
50
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
104
101
single pulse
0.01
0.02
0.05
0.1
0.2
103
102
101
100
10-1
10-2
1 µs
10 µs
100 µs
100
0.5
1 ms
10-1
10-2
10-3
10 ms
DC
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2022-10-11
StrongIRFETTM2ꢀPower-Transistor
IPF010N04NF2S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
1200
2.2
7 V
6 V
5.5 V
2.0
1000
800
600
400
200
0
4.5 V
10 V
1.8
1.6
1.4
5 V
5 V
1.2
1.0
0.8
5.5 V
6 V
4.5 V
7 V
10 V
500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
600
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
1200
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1000
800
600
400
175 °C
200
25 °C
175 °C
25 °C
12
0
1
2
3
4
5
6
3
6
9
15
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=100ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2022-10-11
StrongIRFETTM2ꢀPower-Transistor
IPF010N04NF2S
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
1.8
3.5
1.6
1.4
1.2
1.0
0.8
0.6
3.0
2.5
2.0
1.5
1.0
1890 µA
189 µA
-75 -50 -25
0
25 50 75 100 125 150 175 200
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=100ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀTyp.ꢀforwardꢀcharacteristicsꢀofꢀreverseꢀdiode
105
104
25 °C
175 °C
103
102
101
100
104
103
102
Ciss
Coss
Crss
0
10
20
30
40
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2022-10-11
StrongIRFETTM2ꢀPower-Transistor
IPF010N04NF2S
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
103
10
8 V
20 V
32 V
9
8
7
6
5
4
3
2
1
0
102
25 °C
100 °C
150 °C
101
100
100
101
102
103
0
20
40
60
80
100 120 140 160 180
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=100ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
45
44
43
42
41
40
39
38
37
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2022-10-11
StrongIRFETTM2ꢀPower-Transistor
IPF010N04NF2S
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TO263-7-U02
MILLIMETERS
DIMENSIONS
MIN.
4.30
0.00
0.65
0.45
1.25
9.00
6.86
9.68
7.70
MAX.
4.70
0.25
0.85
0.60
1.40
9.40
7.42
10.08
8.30
A
A1
b
c
c1
D
D1
E
E1
e
1.27
7
N
H
14.61
1.78
0.00
0.00
15.88
2.79
1.60
1.78
L
L1
L2
THETA
3
Q
0° - 8°
0.90
1.10
2.78
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-7,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2022-10-11
StrongIRFETTM2ꢀPower-Transistor
IPF010N04NF2S
RevisionꢀHistory
IPF010N04NF2S
Revision:ꢀ2022-10-11,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2022-10-11
Trademarks
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2022-10-11
相关型号：
IPF010N06NF2S
Infineon's StrongIRFET™ 2 power MOSFET 60 V features lowest RDS(on) of 1.05 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON
IPF012N06NF2S
Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.2 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON
IPF013N04NF2S
Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 1.35 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON
IPF014N08NF2S
Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.4 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON
IPF015N10N5
The IPF015N10N5 is Infineon’s OptiMOS™ 5 power MOSFET 1.5 mOhm, 100 V in the industry standard D²PAK 7-pin package. OptiMOS™ 5 power MOSFET in D²PAK 7-pin targets light electric vehicles and battery management systems.
INFINEON
IPF016N10NF2S
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 1.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON
IPF017N08NF2S
Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.7 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON
IPF024N10NF2S
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 2.4 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON
IPF039N08NF2S
Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 3.9 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON
IPF042N10NF2S
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 4.2 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON
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