IPG20N06S4-15A_15 [INFINEON]
Dual N-channel Normal Level - Enhancement mode;
| 型号： | IPG20N06S4-15A_15 |
| 厂家： | 
Infineon |
| 描述： | Dual N-channel Normal Level - Enhancement mode |
| 文件： | 总9页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPG20N06S4-15A
OptiMOS™-T2 Power-Transistor
Product Summary
VDS
60
15.5
20
V
4)
RDS(on),max
mW
A
ID
Features
• Dual N-channel Normal Level - Enhancement mode
PG-TDSON-8-10
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
Type
Package
Marking
4N0615
IPG20N06S4-15A
PG-TDSON-8-10
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current
one channel active
T C=25 °C, V GS=10 V1)
I D
20
20
80
A
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
one channel active
I D,pulse
-
Avalanche energy, single pulse2, 4)
Avalanche current, single pulse4)
Gate source voltage
E AS
I AS
I D=10A
90
15
mJ
A
-
V GS
-
±20
V
Power dissipation
one channel active
P tot
T C=25 °C
50
W
T j, T stg
Operating and storage temperature
-
-55 ... +175
°C
Rev. 1.0
page 1
2015-09-17
IPG20N06S4-15A
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
3
-
K/W
minimal footprint
100
60
6 cm2 cooling area3)
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D= 1 mA
V GS(th) V DS=V GS, I D=20 µA
Drain-source breakdown voltage
Gate threshold voltage
60
-
-
V
2.0
3.0
4.0
V DS=60 V, V GS=0 V,
T j=25 °C
Zero gate voltage drain current4)
I DSS
-
-
0.01
5
1
µA
V DS=60 V, V GS=0 V,
T j=125 °C2)
100
Gate-source leakage current4)
I GSS
V GS=16 V, V DS=0 V
-
-
-
100 nA
Drain-source on-state resistance4)
R DS(on) V GS=10 V, I D=17 A
12.9
15.5
mW
Rev. 1.0
page 2
2015-09-17
IPG20N06S4-15A
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance4)
Output capacitance4)
Reverse transfer capacitance4)
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
1740
430
19
12
2
2260 pF
560
V GS=0 V, V DS=25 V,
f =1 MHz
38
-
-
-
-
ns
V DD=30 V, V GS=10 V,
I D=20 A, R G=11 W
t d(off)
t f
Turn-off delay time
Fall time
17
9
Gate Charge Characteristics2, 4)
Gate to source charge
Gate to drain charge
Q gs
-
-
-
-
9
12
4.4
29
-
nC
Q gd
2.2
22
5.3
V DD=48 V, I D=20 A,
V GS=0 to 10 V
Q g
Gate charge total
V plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
one channel active
I S
-
-
-
-
-
-
-
20
80
1.3
-
T C=25 °C
Diode pulse current2)
one channel active
I S,pulse
V SD
t rr
V GS=0 V, I F=17 A,
T j=25 °C
Diode forward voltage
0.95
35
35
V
V R=30 V, I F=I S,
di F/dt =100 A/µs
Reverse recovery time2)
Reverse recovery charge2, 4)
ns
nC
Q rr
-
1) Current is limited by bondwire; with an R thJC = 3K/W the chip is able to carry 43A at 25°C.
2) Specified by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4) Per channel
Rev. 1.0
page 3
2015-09-17
IPG20N06S4-15A
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V; one channel active
I D = f(T C); V GS ≥ 6 V; one channel active
60
50
40
30
20
10
0
25
20
15
10
5
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D=f(V DS); T C=25°C; D =0; one channel active
parameter: t p
parameter: D =t p/T
101
100
1 µs
10 µs
0.5
100 µs
100
10
0.1
0.05
10-1
1
1 ms
0.01
single pulse
10-2
0.1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2015-09-17
IPG20N06S4-15A
5 Typ. output characteristics4)
I D = f(V DS); T j = 25 °C
parameter: V GS
6 Typ. drain-source on-state resistance4)
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
80
50
10 V
7 V
6 V
5 V
5.5 V
6.5 V
6.5 V
60
40
20
0
40
30
20
10
6 V
5.5 V
5 V
10 V
0
2
4
6
8
0
20
40
ID [A]
60
80
VDS [V]
7 Typ. transfer characteristics4)
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance4)
R DS(on) = f(T j); I D = 17 A; V GS = 10 V
80
60
40
25
20
15
10
5
20
-55 °C
25 °C
175 °C
0
1
3
5
7
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev. 1.0
page 5
2015-09-17
IPG20N06S4-15A
10 Typ. Capacitances4)
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
C = f(V DS); V GS = 0 V; f = 1 MHz
104
103
102
101
4
3.5
3
Ciss
200µA
20µA
Coss
2.5
2
1.5
1
Crss
0
5
10
15
20
25
30
-60
-20
20
60
100
140
180
VDS [V]
Tj [°C]
11 Typical forward diode characteristicis4)
12 Avalanche characteristics4)
I A S= f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
102
100
10
100 °C
25 °C
150 °C
101
25 °C
175 °C
1
100
0.1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2015-09-17
IPG20N06S4-15A
13 Avalanche energy4)
14 Drain-source breakdown voltage
E AS = f(T j), I D = 10A
V BR(DSS) = f(T j); I D = 1 mA
65
100
80
60
40
20
0
63
61
59
57
55
-60
-20
20
60
100
140
180
25
50
75
100
125
150
175
Tj [°C]
Tj [°C]
15 Typ. gate charge4)
16 Gate charge waveforms
V GS = f(Q gate); I D = 20 A pulsed
parameter: V DD
12
10
8
V GS
Q g
12 V
48 V
6
V gs(th)
4
2
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
0
5
10
15
20
25
Qgate [nC]
Rev. 1.0
page 7
2015-09-17
IPG20N06S4-15A
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2015-09-17
IPG20N06S4-15A
Revision History
Version
Date
Changes
Revision 1.0
17.09.2015
Data Sheet revision 1.0
Rev. 1.0
page 9
2015-09-17
相关型号：
IPG20N06S415AATMA1
Power Field-Effect Transistor, 20A I(D), 60V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
IPG20N06S4L11ATMA1
Power Field-Effect Transistor, 20A I(D), 60V, 0.0112ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
IPG20N06S4L26AATMA1
Power Field-Effect Transistor, 20A I(D), 60V, 0.026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
IPG20N06S4L26ATMA1
Power Field-Effect Transistor, 20A I(D), 60V, 0.026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
IPG20N10S4-36A
Power Field-Effect Transistor, 20A I(D), 100V, 0.036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-10, 8 PIN
INFINEON
IPG20N10S436AATMA1
Power Field-Effect Transistor, 20A I(D), 100V, 0.036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-10, 8 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明