IPG20N10S4L-35 [INFINEON]

Power Field-Effect Transistor;
IPG20N10S4L-35
元器件型号: IPG20N10S4L-35
生产厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述和应用:

Power Field-Effect Transistor

PDF文件: 总9页 (文件大小:142K)
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型号参数:IPG20N10S4L-35参数

IPG20N10S4L-35A

Power Field-Effect Transistor, 20A I(D), 100V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8-10, 8 PIN

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5 INFINEON

IPG20N10S4L35ATMA1

Power Field-Effect Transistor,

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2 INFINEON

IPI020N06N

New OptiMOS™ 40V and 60V

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34 INFINEON

IPI023NE7N3G

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

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24 INFINEON

IPI024N06N3G

OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.

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27 INFINEON

IPI028N08N3G

OptiMOS®3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

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30 INFINEON

IPI029N06N

New OptiMOS™ 40V and 60V

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34 INFINEON

IPI030N10N3G

OptiMOS3 Power-Transistor

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32 INFINEON

IPI030N10N3GXKSA1

Power Field-Effect Transistor, 100A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

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0 INFINEON

IPI032N06N3G

OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.

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78 INFINEON

IPI032N06N3GAKSA1

OptiMOS™3 Power-Transistor

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26 INFINEON

IPI034NE7N3G

OptiMOSTM3 Power-Transistor Features Optimized technology for synchronous rectification

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45 INFINEON

IPI034NE7N3GXK

Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

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0 INFINEON

IPI037N06L3G

Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

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0 INFINEON

IPI037N06L3GHKSA1

Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

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0 INFINEON