IPI05CN10NG [INFINEON]
OptiMOS㈢2 Power-Transistor; OptiMOS®2功率三极管
| 型号： | IPI05CN10NG |
| 厂家： | 
Infineon |
| 描述： | OptiMOS㈢2 Power-Transistor |
| 文件： | 总11页 (文件大小：527K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
OptiMOS®2 Power-Transistor
Product Summary
Features
V DS
100
5.1
V
• N-channel, normal level
R DS(on),max (TO 263)
I D
mΩ
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
100
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
IPB05CN10N G
IPI05CN10N G
IPP05CN10N G
Type
PG-TO263-3
05CN10N
PG-TO262-3
05CN10N
PG-TO220-3
05CN10N
Package
Marking
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
100
100
400
826
A
T C=100 °C
Pulsed drain current3)
I D,pulse
E AS
T C=25 °C
I D=100 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
I D=100 A, V DS=80 V,
di /dt =100 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
T
j,max=175 °C
Gate source voltage 4)
V GS
±20
V
P tot
T C=25 °C
Power dissipation
300
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
Rev. 1.05
page 1
2006-06-02
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
Thermal resistance,
-
-
-
-
-
-
0.5
62
40
K/W
R thJA
minimal footprint
6 cm2 cooling area5)
junction - ambient
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
100
2
-
-
V
DS=V GS, I D=250 µA
3
4
V
DS=80 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
0.1
1
µA
T j=25 °C
V
DS=80 V, V GS=0 V,
-
-
-
10
1
100
T j=125 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=100 A,
Gate-source leakage current
100 nA
R DS(on)
Drain-source on-state resistance
4.1
5.4
mΩ
TO220, TO262
V
GS=10 V, I D=100 A,
-
-
3.8
1.8
5.1
TO263
R G
g fs
Gate resistance
-
-
Ω
|V DS|>2|I D|R DS(on)max
I D=100 A
,
Transconductance
81
162
S
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 161 A.
3) See figure 3
4)
T =150 °C and duty cycle D=0.01 for Vgs<-5V
jmax
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.05
page 2
2006-06-02
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
9050
1370
75
12000 pF
1820
V
GS=0 V, V DS=50 V,
C oss
C rss
t d(on)
t r
f =1 MHz
112
28
42
63
96
31
ns
42
V
DD=50 V, V GS=10 V,
I D=50 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
64
21
Gate Charge Characteristics6)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
46
32
61
48
73
181
-
nC
V
Q gd
V
V
DD=50 V, I D=100 A,
Q sw
Q g
51
GS=0 to 10 V
Gate charge total
136
5.1
145
V plateau
Q oss
Gate plateau voltage
Output charge
V
DD=50 V, V GS=0 V
193 nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
100
400
A
T C=25 °C
I S,pulse
V
GS=0 V, I F=100 A,
V SD
Diode forward voltage
-
1.0
1.2
V
T j=25 °C
t rr
Reverse recovery time
-
-
110
360
ns
V R=50 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
-
nC
6) See figure 16 for gate charge parameter definition
Rev. 1.05
page 3
2006-06-02
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
400
15
8 V
10 V
7 V
6.5 V
320
240
160
80
12
4.5 V
9
6
3
6 V
5 V
5.5 V
5.5 V
6 V
10 V
5 V
4.5 V
0
0
0
0
1
2
3
4
5
50
100
150
V
DS [V]
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
300
250
200
150
100
200
160
120
80
25 °C
175 °C
40
50
0
0
0
2
4
6
8
0
50
100
150
I
D [A]
V
GS [V]
Rev. 1.05
page 4
2006-06-02
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
350
300
250
200
150
100
50
120
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
103
100
limited by on-state
resistance
1 µs
10 µs
0.5
100 µs
1 ms
10 ms
DC
0.2
102
101
100
10-1
0.1
0.05
0.02
0.01
single pulse
10-2
10-3
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
V
DS [V]
t p [s]
Rev. 1.05
page 5
2006-06-02
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); V GS=V DS
R
DS(on)=f(T j); I D=100 A; V GS=10 V
V
parameter: I D
12
10
8
4
3.5
3
2500 µA
250 µA
2.5
2
98 %
6
typ
1.5
1
4
2
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
105
103
104
175 °C, 98%
25 °C
Ciss
175 °C
102
Coss
25 °C, 98%
103
Crss
101
102
101
100
0
0
20
40
60
80
0.5
1
1.5
2
V
DS [V]
V SD [V]
Rev. 1.05
page 6
2006-06-02
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=100 A pulsed
V
I
parameter: T j(start)
parameter: V DD
1000
12
50 V
10
8
80 V
20 V
100
10
25 °C
100 °C
150 °C
6
4
2
1
1
0
0
10
100
1000
50
100
150
Q
gate [nC]
t
AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
115
V GS
Q g
110
105
100
95
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
90
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.05
page 7
2006-06-02
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
PG-TO220-3: Outline
Rev. 1.05
page 8
2006-06-02
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
Rev. 1.05
page 9
2006-06-02
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
PG-TO-263 (D²-Pak)
Rev. 1.05
page 10
2006-06-02
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 1.05
page 11
2006-06-02
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