IPI80N04S304AKSA1 [INFINEON]
Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, TO-262, 3 PIN;
| 型号： | IPI80N04S304AKSA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, TO-262, 3 PIN 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
OptiMOS®-T Power-Transistor
Product Summary
VDS
40
3.8
80
V
R
DS(on),max (SMD version)
mΩ
A
I D
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
Package
Marking
3N0404
3N0404
3N0404
IPB80N04S3-04
IPI80N04S3-04
IPP80N04S3-04
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25°C, VGS=10V
T C=100 °C,
80
A
80
V
GS=10 V2)
Pulsed drain current2)
I D,pulse
EAS
T C=25 °C
I D=80 A
320
290
Avalanche energy, single pulse
Gate source voltage
mJ
V
VGS
±20
Ptot
T C=25 °C
Power dissipation
136
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... +175
55/175/56
Rev. 1.0
page 1
2007-05-03
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
1.1
62
K/W
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0 V, I D= 1 mA
DS=VGS, I D=90 µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
2.1
3.0
4.0
V
DS=40 V, VGS=0 V,
I DSS
Zero gate voltage drain current
-
-
-
-
1
µA
T j=25 °C
V
DS=40 V, VGS=0 V,
100
T j=125 °C2)
I GSS
V
V
GS=20 V, VDS=0 V
GS=10 V, I D=80 A
Gate-source leakage current
-
-
-
100 nA
RDS(on)
Drain-source on-state resistance
3.5
4.1
mΩ
V
GS=10 V, I D=80 A,
-
3.2
3.8
SMD version
Rev. 1.0
page 2
2007-05-03
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
4000
1100
170
20
5200 pF
1400
V
GS=0 V, VDS=25 V,
f =1 MHz
250
-
-
-
-
ns
12
V
DD=20 V, VGS=10 V,
I D=80 A, R G=3.5 Ω
t d(off)
t f
Turn-off delay time
Fall time
30
10
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
22
15
60
5.6
30
26
80
-
nC
Q gd
V
V
DD=32 V, I D=80 A,
GS=0 to 10 V
Q g
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
80
T C=25 °C
I S,pulse
320
V
GS=0 V, I F=80 A,
VSD
Diode forward voltage
Reverse recovery time2)
Reverse recovery charge2)
-
-
-
0.95
35
1.3
V
T j=25 °C
VR=20 V, I F=I S,
diF/dt =100 A/µs
t rr
-
-
ns
nC
Q rr
35
1) Current is limited by bondwire; with an R thJC = 1.1K/W the chip is able to carry 141A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2007-05-03
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS ≥ 6 V
I D = f(T C); VGS ≥ 6 V
160
140
120
100
80
100
80
60
40
20
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0; SMD
parameter: t p
Z
parameter: D =t p/T
101
1000
1 µs
10 µs
100 µs
100
0.5
100
1 ms
0.1
10-1
0.05
0.01
10
1
10-2
single pulse
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t
p [s]
V
DS [V]
Rev. 1.0
page 4
2007-05-03
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C; SMD
parameter: VGS
6 Typ. drain-source on-state resistance
DS(on) = f(I D); T j = 25 °C; SMD
R
parameter: VGS
360
20
10 V
5.5 V
6 V
18
16
14
12
10
8
320
280
240
200
160
120
80
7 V
6.5 V
6 V
6
6.5 V
5.5 V
5 V
4
7 V
40
10 V
2
0
0
20
40
60
D [A]
80
100
120
0
2
4
6
8
I
V
DS [V]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R
DS(on) = f(T j); I D = 80 A; VGS = 10 V; SMD
360
320
280
240
200
160
120
80
6
-55 °C
25 °C
5
4
3
2
175 °C
40
0
2
3
4
5
6
7
8
-60
-20
20
60
T j [°C]
100
140
180
V
GS [V]
Rev. 1.0
page 5
2007-05-03
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
10 Typ. capacitances
V
C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: I D
4
104
3.5
3
Ciss
900 µA
90 µA
103
Coss
2.5
2
1.5
Crss
102
1
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
V
DS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
A S= f(t AV
IF = f(VSD)
I
)
parameter: T j
parameter: Tj(start)
103
100
25 °C
150 °C
100 °C
102
10
25 °C
175 °C
101
100
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
V
SD [V]
t AV [µs]
Rev. 1.0
page 6
2007-05-03
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
13 Typical avalanche energy
AS = f(T j)
14 Typ. drain-source breakdown voltage
BR(DSS) = f(T j); I D = 1 mA
E
V
parameter: I D
55
50
45
40
35
30
1400
1200
1000
800
20 A
600
40 A
80 A
400
200
0
-60
-20
20
60
100
140
180
25
75
125
175
T j [°C]
T j [°C]
15 Typ. gate charge
GS = f(Q gate); I D = 80 A pulsed
16 Gate charge waveforms
V
parameter: VDD
12
V GS
Q g
8 V
32 V
10
8
6
V gs(th)
4
2
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
0
25
50
75
Q
gate [nC]
Rev. 1.0
page 7
2007-05-03
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.0
page 8
2007-05-03
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
Revision History
Version
Date
Changes
Rev. 1.0
page 9
2007-05-03
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