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IPL60R180P6 [INFINEON]

英飞凌 CoolMOS™ P6 超结 MOSFET 系列旨在实现更高的系统效率，同时易于在 CoolMOS™ P6 中设计，填补了专注于提供最佳性能的技术与更专注于易用性的技术之间的空白。;
IPL60R180P6
型号： IPL60R180P6
厂家： Infineon    Infineon
描述：

英飞凌 CoolMOS™ P6 超结 MOSFET 系列旨在实现更高的系统效率，同时易于在 CoolMOS™ P6 中设计，填补了专注于提供最佳性能的技术与更专注于易用性的技术之间的空白。
文件： 总14页 (文件大小：1488K)
中文：  中文翻译
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IPL60R180P6  
MOSFET  
ThinPAKꢀ8x8  
600VꢀCoolMOSªꢀP6ꢀPowerꢀTransistor  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀP6ꢀseriesꢀcombinesꢀthe  
experienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.  
TheꢀofferedꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFET  
whileꢀnotꢀsacrificingꢀeaseꢀofꢀuse.ꢀExtremelyꢀlowꢀswitchingꢀandꢀconduction  
lossesꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompact,  
lighterꢀandꢀcooler.  
Features  
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggedness  
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss  
•ꢀVeryꢀhighꢀcommutationꢀruggedness  
Drain  
Pin 5  
•ꢀEasyꢀtoꢀuse/drive  
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound  
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20  
andꢀJESD22)  
Gate  
Pin 1  
Driver  
Source  
Pin 2  
Power  
Source  
Pin 3,4  
Potentialꢀapplications  
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages  
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTV,ꢀLighting,ꢀServer,ꢀTelecom  
andꢀUPS.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Value  
650  
180  
44  
Unit  
V
mΩ  
nC  
A
Qg,typ  
ID,pulse  
62  
Eoss @ 400V  
Body diode diF/dt  
5.7  
µJ  
500  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPL60R180P6  
PG-VSON-4  
6R180P6  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2017-08-30  
600VꢀCoolMOSªꢀP6ꢀPowerꢀTransistor  
IPL60R180P6  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2017-08-30  
600VꢀCoolMOSªꢀP6ꢀPowerꢀTransistor  
IPL60R180P6  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
22.4  
14.1  
TC=25°C  
A
Continuous drain current1)  
ID  
TC=100°C  
Pulsed drain current2)  
ID,pulse  
EAS  
EAR  
IAR  
-
-
-
-
-
-
-
-
-
-
-
-
-
62  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, repetitive  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
Power dissipation  
-
497  
0.75  
3.9  
100  
20  
mJ  
mJ  
A
ID=3.9A; VDD=50V; see table 10  
-
ID=3.9A; VDD=50V; see table 10  
-
-
dv/dt  
VGS  
VGS  
Ptot  
-
V/ns VDS=0...400V  
-20  
-30  
-
V
static;  
30  
V
AC (f>1 Hz)  
TC=25°C  
-
176  
150  
150  
19.4  
62  
W
°C  
°C  
A
Storage temperature  
Tstg  
Tj  
-40  
-40  
-
Operating junction temperature  
Continuous diode forward current  
Diode pulse current2)  
-
IS  
TC=25°C  
TC=25°C  
IS,pulse  
-
A
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ  
see table 8  
Reverse diode dv/dt3)  
dv/dt  
diF/dt  
-
-
-
-
15  
V/ns  
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ  
see table 8  
Maximum diode commutation speed  
500  
A/µs  
1) Limited by Tj max. Maximum duty cycle D=0.75  
2) Pulse width tp limited by Tj,max  
3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2017-08-30  
600VꢀCoolMOSªꢀP6ꢀPowerꢀTransistor  
IPL60R180P6  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
0.71  
62  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W device on PCB, minimal footprint  
Device on 40mm*40mm*1.5mm  
epoxy PCB FR4 with 6cm² (one  
Thermal resistance, junction - ambient  
for SMD version  
layer, 70µm thickness) copper area  
for drain connection and cooling.  
PCB is vertical without air stream  
cooling.  
RthJA  
-
-
-
-
45  
°C/W  
Soldering temperature, wave & reflow  
soldering allowed  
Tsold  
260  
°C  
reflow MSL2a  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2017-08-30  
600VꢀCoolMOSªꢀP6ꢀPowerꢀTransistor  
IPL60R180P6  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
600  
3.5  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
V
V
VGS=0V,ꢀID=1mA  
4.0  
4.5  
VDS=VGS,ꢀID=0.75mA  
-
-
-
10  
1
-
VDS=600,ꢀVGS=0V,ꢀTj=25°C  
VDS=600,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
0.162 0.180  
0.421  
VGS=10V,ꢀID=9A,ꢀTj=25°C  
VGS=10V,ꢀID=9A,ꢀTj=150°C  
RDS(on)  
RG  
-
-
1.6  
-
Ω
f=1MHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
2080  
89  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
Coss  
Effective output capacitance,  
energy related1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
72  
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance,  
time related2)  
313  
12.5  
7.6  
40  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=13V,ꢀID=11.3A,  
RG=1.7Ω;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=11.3A,  
RG=1.7Ω;ꢀseeꢀtableꢀ9  
VDD=400V,ꢀVGS=13V,ꢀID=11.3A,  
RG=1.7Ω;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
VDD=400V,ꢀVGS=13ꢀV,ꢀID=11.3A,  
RG=1.7Ω;ꢀseeꢀtableꢀ9  
5.8  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
13  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=11.3A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=11.3A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=11.3A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=11.3A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
15  
Qg  
44  
Gate plateau voltage  
Vplateau  
6.1  
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2017-08-30  
600VꢀCoolMOSªꢀP6ꢀPowerꢀTransistor  
IPL60R180P6  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
0.9  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
-
V
VGS=0V,ꢀIF=11.3A,ꢀTj=25°C  
VR=400V,ꢀIF=11.3A,ꢀdiF/dt=100A/µs;  
see table 8  
-
-
-
350  
5.3  
28  
-
-
-
ns  
VR=400V,ꢀIF=11.3A,ꢀdiF/dt=100A/µs;  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=400V,ꢀIF=11.3A,ꢀdiF/dt=100A/µs;  
see table 8  
Peak reverse recovery current  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2017-08-30  
600VꢀCoolMOSªꢀP6ꢀPowerꢀTransistor  
IPL60R180P6  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
200  
102  
1 µs  
10 µs  
180  
160  
140  
120  
100  
80  
100 µs  
101  
100  
1 ms  
10 ms  
DC  
10-1  
10-2  
10-3  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
101  
1 µs  
10 µs  
101  
100  
100 µs  
1 ms  
100  
10 ms  
0.5  
DC  
0.2  
10-1  
10-2  
10-3  
0.1  
10-1  
0.05  
0.02  
0.01  
single pulse  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2017-08-30  
600VꢀCoolMOSªꢀP6ꢀPowerꢀTransistor  
IPL60R180P6  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
65  
40  
20 V  
20 V  
10 V  
8 V  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
10 V  
35  
30  
25  
20  
15  
10  
5
8 V  
7 V  
6 V  
7 V  
5.5 V  
6 V  
5 V  
5.5 V  
5 V  
4.5 V  
4.5 V  
10  
0
0
0
5
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
1.50  
0.45  
1.40  
1.30  
1.20  
1.10  
1.00  
0.90  
0.40  
0.35  
0.30  
0.25  
6.5 V  
7 V  
5.5 V  
typ  
6 V  
98%  
0.80  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
0.20  
0.15  
0.10  
0.05  
10 V  
20 V  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=9.0ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2017-08-30  
600VꢀCoolMOSªꢀP6ꢀPowerꢀTransistor  
IPL60R180P6  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
70  
10  
9
8
7
6
5
4
3
2
1
0
60  
25 °C  
480 V  
120 V  
50  
40  
150 °C  
30  
20  
10  
0
0
2
4
6
8
10  
12  
14  
0
10  
20  
30  
40  
50  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=11.3ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀAvalancheꢀenergy  
102  
500  
25 °C  
125 °C  
450  
400  
350  
300  
250  
200  
150  
100  
50  
101  
100  
10-1  
0
0.0  
0.5  
1.0  
1.5  
2.0  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=3.9ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2017-08-30  
600VꢀCoolMOSªꢀP6ꢀPowerꢀTransistor  
IPL60R180P6  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
700  
104  
680  
660  
640  
620  
600  
580  
560  
540  
520  
Ciss  
103  
102  
Coss  
101  
Crss  
100  
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
7
6
5
4
3
2
1
0
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2017-08-30  
600VꢀCoolMOSªꢀP6ꢀPowerꢀTransistor  
IPL60R180P6  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
Rg1  
VDS  
Rg 2  
IF  
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀswitchingꢀtimesꢀ(ss)  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2017-08-30  
600VꢀCoolMOSªꢀP6ꢀPowerꢀTransistor  
IPL60R180P6  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-VSON-4,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
12  
Rev.ꢀ2.1,ꢀꢀ2017-08-30  
600VꢀCoolMOSªꢀP6ꢀPowerꢀTransistor  
IPL60R180P6  
7ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSTMꢀP6ꢀWebpage:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀP6ꢀapplicationꢀnote:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀP6ꢀsimulationꢀmodel:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
13  
Rev.ꢀ2.1,ꢀꢀ2017-08-30  
600VꢀCoolMOSªꢀP6ꢀPowerꢀTransistor  
IPL60R180P6  
RevisionꢀHistory  
IPL60R180P6  
Revision:ꢀ2017-08-30,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
Release of final version  
2014-05-16  
2017-08-30  
Updated MSL; style updated  
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TrademarksꢀupdatedꢀAugustꢀ2015  
OtherꢀTrademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
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Final Data Sheet  
14  
Rev.ꢀ2.1,ꢀꢀ2017-08-30  

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