IPL65R190E6 [INFINEON]
Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4;
| 型号： | IPL65R190E6 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4 开关 脉冲 晶体管 |
| 文件： | 总15页 (文件大小：1643K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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