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IPLK70R1K4P7 [INFINEON]

CoolMOS™ P7超结 (SJ) MOSFET 系列旨在解决低功耗开关电源市场的典型挑战，具备卓越的性能和易用性，更小的外形尺寸和更高的价格竞争力。ThinPAK 5x6 封装的特点是占用空间非常小，仅为 5x6 mm²，低剖面高度仅为 1 mm。再加上其标杆的低寄生效应，正是这些特点造就了其更小的外形尺寸，同时还有助于提高功率密度。此组合使ThinPAK 封装中的 CoolMOS™P7成为了其目标应用的完美选择。700V CoolMOS™ P7 系列针对反激式拓扑结构进行了优化。;
IPLK70R1K4P7
型号： IPLK70R1K4P7
厂家： Infineon    Infineon
描述：

CoolMOS™ P7超结 (SJ) MOSFET 系列旨在解决低功耗开关电源市场的典型挑战，具备卓越的性能和易用性，更小的外形尺寸和更高的价格竞争力。ThinPAK 5x6 封装的特点是占用空间非常小，仅为 5x6 mm²，低剖面高度仅为 1 mm。再加上其标杆的低寄生效应，正是这些特点造就了其更小的外形尺寸，同时还有助于提高功率密度。此组合使ThinPAK 封装中的 CoolMOS™P7成为了其目标应用的完美选择。700V CoolMOS™ P7 系列针对反激式拓扑结构进行了优化。

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IPLK70R1K4P7  
MOSFET  
ThinPAKꢀ5x6  
8
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
7
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.  
6
5
TheꢀlatestꢀCoolMOS™ꢀP7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtargetꢀcost  
sensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,  
lighting,ꢀTV,ꢀetc.  
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction  
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof  
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency  
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing  
towardsꢀveryꢀslimꢀdesigns.  
1
2
3
4
*1: Internal body diode  
*2: Internal ESD diode  
Drain  
Pin 5,6,7,8  
Features  
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss  
•ꢀExcellentꢀthermalꢀbehavior  
*1  
Gate  
Pin 4  
*2  
•ꢀIntegratedꢀESDꢀprotectionꢀdiode  
•ꢀLowꢀswitchingꢀlossesꢀ(Eoss  
•ꢀFullyꢀqualifiedꢀacc.ꢀJEDECꢀforꢀIndustrialꢀApplications  
)
Kelvin  
Source  
Pin 3  
Source  
Pin 1,2  
Benefits  
•ꢀCostꢀcompetitiveꢀtechnology  
•ꢀLowerꢀtemperature  
•ꢀHighꢀESDꢀruggedness  
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies  
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors  
Potentialꢀapplications  
RecommendedꢀforꢀFlybackꢀtopologiesꢀinꢀChargersꢀandꢀAdapters  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj=25°C  
RDS(on),max  
Value  
700  
1.4  
4.7  
8.2  
0.6  
3
Unit  
V
Ω
Qg,typ  
nC  
A
ID,pulse  
Eoss @ 400V  
V(GS)th,typ  
µJ  
V
ESD class (HBM)  
1C  
Typeꢀ/ꢀOrderingꢀCode  
Package  
ThinPAK 5x6 SMD  
Marking  
RelatedꢀLinks  
see Appendix A  
IPLK70R1K4P7  
70R1K4P7  
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2018-09-26  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPLK70R1K4P7  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2018-09-26  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPLK70R1K4P7  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
3.9  
2.4  
TC = 20°C  
A
Continuous drain current1)  
Pulsed drain current2)  
ID  
TC = 100°C  
ID,pulse  
IAS  
-
-
-
-
8.2  
-
A
A
TC=25°C  
Application (Flyback) relevant  
avalanche current, single pulse3)  
measured with standard leakage  
inductance of transformer of 5µH  
2.4  
-
MOSFET dv/dt ruggedness  
Gate source voltage  
dv/dt  
VGS  
100  
V/ns VDSꢀ=0...400V  
-16  
-30  
-
-
16  
30  
static;  
V
AC (f>1 Hz)  
Power dissipation  
Ptot  
-
-
-
-
-
-
-
-
22.7  
150  
5.7  
8.2  
1
W
°C  
A
TC=25°C  
-
Operating and storage temperature  
Continuous diode forward current  
Diode pulse current2)  
Reverse diode dv/dt4)  
Maximum diode commutation speed4) dif/dt  
Tj,ꢀTstg  
IS  
-55  
-
-
-
-
-
TC=25°C  
TC = 25°C  
IS,pulse  
A
dv/dt  
V/ns VDSꢀ=0...400V,ꢀISD<=IS,ꢀTj=25°C  
A/µs VDSꢀ=0...400V,ꢀISD<=IS,ꢀTj=25°C  
50  
Insulation withstand voltage VISO  
n.a.  
V
Vrms, TC=25°C, t=1min  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
5.5  
Thermal resistance, junction  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
80  
°C/W Device on PCB, minimal footprint  
Device on 40mm*40mm*1.5 epoxy  
PCB FR4 with 6cm2 (one layer 70µm  
°C/W thickness) copper area for drain  
connection and cooling. PCB is  
vertical without airflow.  
Thermal resistance, junction - ambient  
for SMD version  
RthJA  
-
-
35  
-
62  
Soldering temperature, wave- & reflow  
soldering allowed  
Tsold  
260  
°C  
reflow MSL1  
1) Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5  
2) Pulse width tp limited by Tj,max  
3) Proven during verification test. Avalanche value is assuming only the energy from a Flyback transformer leakage inductance is  
transferred to the MOSFET. For less common avalanche situations it is recommended to contact Infineon for more information.  
For explanation please read AN - CoolMOSTM 700V P7.  
4)ꢀVDClink=400V;ꢀVDS,peak<V(BR)DSS;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2018-09-26  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPLK70R1K4P7  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
700  
Typ.  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
-
V
V
VGS=0V,ꢀID=1mA  
2.50  
3
3.50  
VDS=VGS,ꢀID=0.04mA  
-
-
-
10  
1
-
VDS=700V,ꢀVGS=0V,ꢀTj=25°C  
VDS=700V,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
IDSS  
µA  
µA  
Gate-source leakage current incl. Zener  
diode  
IGSS  
RDS(on)  
RG  
-
-
1
VGS=20V,ꢀVDS=0V  
-
-
1.15  
2.62  
1.40  
-
VGS=10V,ꢀID=0.7A,ꢀTj=25°C  
VGS=10V,ꢀID=0.7A,ꢀTj=150°C  
Drain-source on-state resistance  
Gate resistance  
Ω
Ω
-
1.6  
-
f=1ꢀMHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
158  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
Coss  
3
Effective output capacitance, energy  
related1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
9
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance, time  
related2)  
113  
12  
4.9  
63  
61  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=13V,ꢀID=0.5A,  
RG=10.2Ω  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=0.5A,  
RG=10.2Ω  
VDD=400V,ꢀVGS=13V,ꢀID=0.5A,  
RG=10.2Ω  
Turn-off delay time  
Fall time  
td(off)  
tf  
VDD=400V,ꢀVGS=13V,ꢀID=0.5A,  
RG=10.2Ω  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
0.7  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=0.5A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=0.5A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=0.5A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=0.5A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
1.7  
Qg  
4.7  
Gate plateau voltage  
Vplateau  
4.3  
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2018-09-26  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPLK70R1K4P7  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
0.9  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
VSD  
trr  
-
-
-
-
-
-
-
-
V
VGS=0V,ꢀIF=0.9A,ꢀTj=25°C  
Reverse recovery time  
275  
0.4  
ns  
µC  
A
VR=400V,ꢀIF=0.5A,ꢀdiF/dt=50A/µs  
VR=400V,ꢀIF=0.5A,ꢀdiF/dt=50A/µs  
VR=400V,ꢀIF=0.5A,ꢀdiF/dt=50A/µs  
Reverse recovery charge  
Peak reverse recovery current  
Qrr  
Irrm  
6
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2018-09-26  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPLK70R1K4P7  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
30  
102  
25  
20  
15  
10  
5
10 µs  
101  
100 µs  
1 µs  
1 ms  
10 ms  
100  
DC  
10-1  
10-2  
10-3  
0
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
101  
10 µs  
101  
100  
0.5  
0.2  
1 µs  
100 µs  
1 ms  
10 ms  
DC  
0.1  
100  
0.05  
10-1  
10-2  
10-3  
0.02  
0.01  
single pulse  
10-1  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2018-09-26  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPLK70R1K4P7  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
10  
7
20 V  
10 V  
8 V  
20 V  
10 V  
8 V  
9
6
5
4
3
2
1
0
7 V  
8
7
7 V  
6 V  
6
5
4
3
2
1
0
6 V  
5.5 V  
5.5 V  
5 V  
5 V  
4.5 V  
4.5 V  
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
6.0  
4.0  
5.5 V  
6 V  
6.5 V 7 V  
5 V  
10 V  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
3.5  
3.0  
2.5  
98%  
2.0  
1.5  
typ  
1.0  
0.5  
0.0  
0
5
10  
15  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=0.7ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2018-09-26  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPLK70R1K4P7  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
10  
10  
9
9
8
7
6
8
25 °C  
7
6
120 V  
400 V  
5
5
150 °C  
4
3
2
1
0
4
3
2
1
0
0
2
4
6
8
10  
12  
0
2
4
6
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=0.5ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
102  
840  
25 °C  
125 °C  
820  
800  
780  
760  
740  
720  
700  
680  
660  
640  
620  
600  
101  
100  
10-1  
0.0  
0.5  
1.0  
1.5  
2.0  
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2018-09-26  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPLK70R1K4P7  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
104  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
103  
Ciss  
102  
101  
Coss  
Crss  
100  
10-1  
0
100  
200  
300  
400  
500  
0
100  
200  
300  
400  
500  
600  
700  
VDSꢀ[V]  
VDSꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz  
Eoss=f(VDS)  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2018-09-26  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPLK70R1K4P7  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
Rg1  
VDS  
Rg 2  
IF  
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2018-09-26  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPLK70R1K4P7  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
DOCUMENT NO.  
Z8B00181453  
MILLIMETERS  
DIM  
INCHES  
MIN  
0.90  
MAX  
1.10  
0.54  
MIN  
MAX  
0.043  
0.021  
0.009  
0.014  
0
A
b
0.035  
SCALE  
b1  
c
0.001  
0.006  
0.203  
0.195  
2.5  
0.15  
5.15  
4.95  
0.35  
0
2.5  
D
D1  
D2  
E
5.35  
4.40  
6.35  
6.10  
0.211  
0.173  
0.250  
0.240  
5mm  
5.95  
5.70  
0.234  
0.224  
EUROPEAN PROJECTION  
E1  
E2  
e
1.27  
8
0.050  
8
N
K1  
L
0.45  
0.45  
ꢀꢁꢂƒ  
0.018  
0.018  
ꢀꢁꢂƒ  
ISSUE DATE  
13-05-2016  
M
Ĭ
ꢃꢄƒ  
ꢃꢄƒ  
REVISION  
aaa  
eee  
0.25  
0.08  
0.010  
0.003  
01  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀThinPAKꢀ5x6ꢀSMD,ꢀdimensionsꢀinꢀmm/inchesꢀ-ꢀIndustrialꢀGrade  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2018-09-26  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPLK70R1K4P7  
7ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSªꢀP7ꢀWebpage:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
12  
Rev.ꢀ2.0,ꢀꢀ2018-09-26  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPLK70R1K4P7  
RevisionꢀHistory  
IPLK70R1K4P7  
Revision:ꢀ2018-09-26,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2018-09-26  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2018ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
13  
Rev.ꢀ2.0,ꢀꢀ2018-09-26  

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