IPN70R900P7S [INFINEON]
CoolMOS™ P7 超结 (SJ) MOSFET 专为解决低功率 SMPS 市场典型挑战而设计，具有优异性能和易用性，改进外形规格，提高价格竞争力。SOT-223 封装是高成本效益的一对一插入式 DPAK 替代产品，还能够减少部分设计的空间占用。该产品可在典型 DPAK 所占用空间中安放，具有与之相当的热性能。这一组合使采用SOT-223 封装的CoolMOS™ P7 完美适用于目标应用。;
| 型号： | IPN70R900P7S |
| 厂家： | 
Infineon |
| 描述： | CoolMOS™ P7 超结 (SJ) MOSFET 专为解决低功率 SMPS 市场典型挑战而设计，具有优异性能和易用性，改进外形规格，提高价格竞争力。SOT-223 封装是高成本效益的一对一插入式 DPAK 替代产品，还能够减少部分设计的空间占用。该产品可在典型 DPAK 所占用空间中安放，具有与之相当的热性能。这一组合使采用SOT-223 封装的CoolMOS™ P7 完美适用于目标应用。 |
| 文件： | 总13页 (文件大小：1023K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPN70R900P7S
MOSFET
PG-SOT223
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
TheꢀlatestꢀCoolMOS™ꢀP7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtargetꢀcost
sensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,
lighting,ꢀTV,ꢀetc.
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing
towardsꢀveryꢀslimꢀdesigns.
Drain
Pin 2, Tab
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss
•ꢀExcellentꢀthermalꢀbehavior
•ꢀIntegratedꢀESDꢀprotectionꢀdiode
Gate
Pin 1
•ꢀLowꢀswitchingꢀlossesꢀ(Eoss
•ꢀProductꢀvalidationꢀacc.ꢀJEDECꢀStandard
)
Source
Pin 3
Benefits
•ꢀCostꢀcompetitiveꢀtechnology
•ꢀLowerꢀtemperature
•ꢀHighꢀESDꢀruggedness
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors
Potentialꢀapplications
RecommendedꢀforꢀFlybackꢀtopologiesꢀforꢀexampleꢀusedꢀinꢀChargers,
Adapters,ꢀLightingꢀApplications,ꢀetc.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj=25°C
RDS(on),max
Value
700
0.9
Unit
V
Ω
Qg,typ
6.8
nC
A
ID,pulse
12.8
0.9
Eoss @ 400V
V(GS)th,typ
µJ
V
3
ESD class (HBM)
1C
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPN70R900P7S
PG-SOT223
70S900
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.2,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN70R900P7S
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.2,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN70R900P7S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
6
3.5
TC = 20°C
A
Continuous drain current1)
Pulsed drain current2)
ID
TC = 100°C
ID,pulse
IAS
-
-
-
-
-
-
12.8
3.6
A
A
TC=25°C
Application (Flyback) relevant
avalanche current, single pulse3)
measured with standard leakage
inductance of transformer of 5µH
MOSFET dv/dt ruggedness
Gate source voltage
dv/dt
VGS
100
V/ns VDSꢀ=0...400V
-16
-30
-
-
16
30
static;
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
-
-
-
-
-
-
6.5
150
1.9
12.8
1
W
°C
A
TC=25°C
-
Operating and storage temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt4)
Maximum diode commutation speed4) dif/dt
Tj,ꢀTstg
IS
-40
-
-
-
-
-
TC=25°C
TC = 25°C
IS,pulse
A
dv/dt
V/ns VDSꢀ=0...400V,ꢀISD<=IS,ꢀTj=25°C
A/µs VDSꢀ=0...400V,ꢀISD<=IS,ꢀTj=25°C
50
Insulation withstand voltage VISO
n.a.
V
Vrms, TC=25°C, t=1min
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - solder
point
RthJS
-
-
-
19.1
°C/W -
Thermal resistance, junction - ambient
for minimal footprint
RthJA
-
-
-
160
75
°C/W minimal footprint
Device on 40mm*40mm*1.5 epoxy
PCB FR4 with 6cm2 (one layer 70µm
°C/W thick) copper area for drain
connection and cooling. PCB is
vertical without blown air.
Thermal resistance, junction - ambient
soldered on copper area
RthJA
-
-
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
reflow MSL1
1) DPAK / IPAK equivalent. Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7.
4)ꢀVDClink=400V;ꢀVDS,peak<V(BR)DSS;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG
Final Data Sheet
3
Rev.ꢀ2.2,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN70R900P7S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
700
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
2.50
3
3.50
VDS=VGS,ꢀID=0.06mA
-
-
-
10
1
-
VDS=700V,ꢀVGS=0V,ꢀTj=25°C
VDS=700V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
IDSS
µA
µA
Gate-source leakage current incl. Zener
diode
IGSS
RDS(on)
RG
-
-
1
VGS=20V,ꢀVDS=0V
-
-
0.74
1.53
0.90
-
VGS=10V,ꢀID=1.1A,ꢀTj=25°C
VGS=10V,ꢀID=1.1A,ꢀTj=150°C
Drain-source on-state resistance
Gate resistance
Ω
Ω
-
1.6
-
f=1ꢀMHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
211
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
5
Effective output capacitance, energy
related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
13
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related2)
177
12
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=0.9A,
RG=5.3Ω
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=0.9A,
RG=5.3Ω
4.7
58
VDD=400V,ꢀVGS=13V,ꢀID=0.9A,
RG=5.3Ω
Turn-off delay time
Fall time
td(off)
tf
VDD=400V,ꢀVGS=13V,ꢀID=0.9A,
RG=5.3Ω
31
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
Qgd
2.6
Qg
6.8
Gate plateau voltage
Vplateau
4.4
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
4
Rev.ꢀ2.2,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN70R900P7S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
VSD
trr
-
-
-
-
-
-
-
-
V
VGS=0V,ꢀIF=1.4A,ꢀTj=25°C
Reverse recovery time
160
0.5
ns
µC
A
VR=400V,ꢀIF=0.9A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=0.9A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=0.9A,ꢀdiF/dt=50A/µs
Reverse recovery charge
Peak reverse recovery current
Qrr
Irrm
7
Final Data Sheet
5
Rev.ꢀ2.2,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN70R900P7S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
10
102
9
8
7
6
5
4
3
2
1
0
101
100
10 µs
1 µs
100 µs
1 ms
10-1
10-2
10-3
10 ms
DC
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
102
101
100
1 µs
101
10 µs
0.5
100 µs
0.2
0.1
1 ms
10-1
10-2
10-3
100
0.05
0.02
10 ms
0.01
single pulse
DC
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.2,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN70R900P7S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
14
10
20 V
20 V
10 V
10 V
9
8
7
6
5
4
3
2
1
0
8 V
7 V
6 V
12
8 V
7 V
10
6 V
5.5 V
8
6
5.5 V
5 V
4
5 V
4.5 V
2
4.5 V
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
6
2.00
7 V
1.80
1.60
1.40
5
4
3
2
1
0
5.5 V
6.5 V
6 V
5 V
98%
1.20
10 V
1.00
typ
0.80
0.60
0.40
0.20
0.00
0
5
10
15
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=1.1ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
7
Rev.ꢀ2.2,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN70R900P7S
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
14
10
9
8
25 °C
12
10
7
6
5
4
3
2
1
0
120 V
400 V
8
150 °C
6
4
2
0
0
2
4
6
8
10
12
0
2
4
6
8
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=0.9ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
102
840
25 °C
125 °C
820
800
780
760
740
720
700
680
660
640
620
600
101
100
10-1
0.0
0.5
1.0
1.5
2.0
-75 -50 -25
0
25
50
75 100 125 150 175
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
8
Rev.ꢀ2.2,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN70R900P7S
Diagramꢀ14:ꢀTyp.ꢀcapacitances
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
104
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
103
Ciss
102
101
Coss
100
Crss
10-1
0
100
200
300
400
500
0
100
200
300
400
500
600
700
VDSꢀ[V]
VDSꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Eoss=f(VDS)
Final Data Sheet
9
Rev.ꢀ2.2,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN70R900P7S
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
10
Rev.ꢀ2.2,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN70R900P7S
6ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00180553
0
SCALE
MILLIMETERS
DIM
INCHES
MIN
1.52
-
MAX
1.80
0.10
1.70
0.80
3.10
0.32
6.70
7.30
3.70
MIN
0.060
-
MAX
2.5
A
A1
A2
b
0.071
0.004
0.067
0.031
0.122
0.013
0.264
0.287
0.146
0
2.5
1,50
0.059
0.024
0.116
0.009
0.248
0.264
0.130
5mm
0.60
2.95
0.24
6.30
6.70
3.30
b2
c
EUROPEAN PROJECTION
D
E
E1
e
2.3 BASIC
4.6 BASIC
0.091 BASIC
0.181 BASIC
e1
L
ISSUE DATE
24-02-2016
0.75
1.10
0.030
0.043
N
3
3
REVISION
O
ꢀ
ꢁꢀ
ꢀ
ꢁꢀ
01
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-SOT223,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.2,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN70R900P7S
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSªꢀP7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
12
Rev.ꢀ2.2,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN70R900P7S
RevisionꢀHistory
IPN70R900P7S
Revision:ꢀ2018-02-13,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
Release of final version
Changed to MSL level 1
Corrected front page text
2017-06-23
2017-09-15
2018-02-13
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
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OtherꢀTrademarks
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Final Data Sheet
13
Rev.ꢀ2.2,ꢀꢀ2018-02-13
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