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IPP023N04N G [INFINEON]

OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。;
IPP023N04N G
型号： IPP023N04N G
厂家： Infineon    Infineon
描述：

OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。

开关 电机 服务器 转换器
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中文：  中文翻译
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IPP023N04N G  
IPB023N04N G  
"%&$!"#™3 Power-Transistor  
Product Summary  
Features  
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Marking  
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Maximum ratings, 2 D T Wꢍ ꢊ ꢎ Tꢂ ꢏ E? =6CC @D96BG:C6 CA64:7:65  
Value  
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Parameter  
Symbol Conditions  
Unit  
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ꢇ F2 =2 ? 496 6? 6B8Iꢏ C:? 8=6 AE=C6  
!2 D6 C@EB46 F@=D2 86  
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IPP023N04N G  
IPB023N04N G  
Maximum ratings, 2 D T Wꢍ ꢊ ꢎ Tꢂ ꢏ E? =6CC @D96BG:C6 CA64:7:65  
Value  
Parameter  
Symbol Conditions  
Unit  
P `\`  
T 8ꢍ ꢊ ꢎ Tꢂ  
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ꢎ ꢎ ꢗꢄ ꢕ ꢎ ꢗꢎ ꢉ  
Tꢂ  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Thermal characteristics  
R `U@8  
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Static characteristics  
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ꢁ B2 :? ꢃC@EB46 3 B62 <5@G? F@=D2 86  
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IPP023N04N G  
IPB023N04N G  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Dynamic characteristics  
C V__  
#? AED 42 A2 4:D2 ? 46  
( EDAED 42 A2 4:D2 ? 46  
+ 6F6BC6 DB2 ? C76B 42 A2 4:D2 ? 46  
-EB? ꢃ@? 56=2 I D:>6  
+ :C6 D:>6  
%
%
%
%
%
%
%
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*(((  
//  
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V
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C \__  
8^__  
t Q"\[#  
t ^  
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%
f ꢍ ꢄ & " J  
*/  
%
%
%
%
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.&.  
,(  
V
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I 9ꢍ ꢓ ꢅ ꢇ ꢏ R =ꢍ ꢄ ꢔꢉ "  
t Q"\SS#  
t S  
-EB? ꢃ@77 56=2 I D:>6  
  2 == D:>6  
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!2 D6 ꢂ 92 BT6 ꢂ 92 B2 4D6B:CD:4C.#  
!2 D6 D@ C@EB46 492 B86  
!2 D6 492 B86 2 D D9B6C9@=5  
!2 D6 D@ 5B2 :? 492 B86  
,G:D49:? 8 492 B86  
Q T_  
%
%
%
%
%
%
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**  
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*,  
1(  
,&0  
%
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Q T"`U#  
Q TQ  
%
%
V
V
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=Hꢍ ꢅ D@ ꢄ ꢅ /  
Q _c  
%
)*(  
%
Q T  
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V ]YN`RNa  
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V
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!2 D6 492 B86 D@D2 =ꢏ CI? 4ꢔ   ꢀ -  
( EDAED 492 B86  
%
%
0-  
/+  
%
%
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Q \__  
V
99ꢍ ꢊ ꢅ /ꢏ V =Hꢍ ꢅ /  
Reverse Diode  
I H  
ꢁ :@56 4@? D:? E@EC 7@BG2 B5 4EBB6? D  
ꢁ :@56 AE=C6 4EBB6? D  
%
%
%
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1(  
6
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I H$]aY_R  
,((  
V
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V H9  
ꢁ :@56 7@BG2 B5 F@=D2 86  
%
%
(&1+  
0(  
)&*  
%
K
T Wꢍ ꢊ ꢎ Tꢂ  
V Gꢍ ꢊ ꢅ /ꢏ I <4I Hꢏ  
Qi <'Qt ꢍ ꢋ ꢅ ꢅ ꢇ ꢗW C  
Q ^^  
+ 6F6BC6 B64@F6BI 492 B86  
[8  
.# ,66 7:8EB6 ꢄ ꢉ 7@B 82 D6 492 B86 A2 B2 >6D6B 567:? :D:@?  
+ 6Fꢔ ꢄ ꢔꢊ  
A2 86 ꢓ  
ꢊ ꢅ ꢅ ꢌ ꢃꢄ ꢊ ꢃꢄ ꢄ  
IPP023N04N G  
IPB023N04N G  
1 Power dissipation  
2 Drain current  
P
`\`4S"T 8#  
I 94S"T 8ꢑꢈ V =H"ꢄ ꢅ /  
200  
100  
80  
60  
40  
20  
0
150  
100  
50  
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
T C [°C]  
T C [°C]  
3 Safe operating area  
I 94S"V 9Hꢑꢈ T 8ꢍ ꢊ ꢎ Tꢂ ꢈ D 4(  
A2 B2 >6D6Bꢘ t ]  
4 Max. transient thermal impedance  
`U@84S"t ]#  
Z
A2 B2 >6D6Bꢘ D 4t ]'T  
103  
100  
=:>:D65 3 I @? ꢃCD2 D6  
ꢄ W C  
^R_V_`N[PR  
(&-  
ꢄ ꢅ W C  
(&*  
ꢄ ꢅ ꢅ W C  
102  
10-1  
(&)  
98  
(&(-  
ꢄ >C  
(&(*  
(&()  
ꢄ ꢅ >C  
101  
10-2  
C:? 8=6 AE=C6  
100  
10-1  
10-3  
10-6  
100  
101  
102  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
V DS [V]  
t p [s]  
+ 6Fꢔ ꢄ ꢔꢊ  
A2 86 ꢋ  
ꢊ ꢅ ꢅ ꢌ ꢃꢄ ꢊ ꢃꢄ ꢄ  
IPP023N04N G  
IPB023N04N G  
5 Typ. output characteristics  
I 94S"V 9Hꢑꢈ T Wꢍ ꢊ ꢎ Tꢂ  
6 Typ. drain-source on resistance  
9H"\[#4S"I 9ꢑꢈ T Wꢍ ꢊ ꢎ Tꢂ  
R
A2 B2 >6D6Bꢘ V =H  
A2 B2 >6D6Bꢘ V =H  
400  
4
ꢄ ꢅ /  
ꢕ /  
ꢎ ꢔꢎ /  
ꢉ ꢔꢎ /  
ꢉ /  
300  
200  
100  
0
3
2
1
0
ꢉ ꢔꢎ /  
ꢕ /  
ꢉ /  
ꢄ ꢅ /  
ꢎ ꢔꢎ /  
ꢎ /  
0
1
2
3
0
40  
80  
120  
160  
200  
V DS [V]  
I D [A]  
7 Typ. transfer characteristics  
I 94S"V =Hꢑꢈ KV 9Hg5*gI 9gR 9H"\[#ZNd  
A2 B2 >6D6Bꢘ T W  
8 Typ. forward transconductance  
g S_4S"I 9ꢑꢈ T Wꢍ ꢊ ꢎ Tꢂ  
400  
300  
200  
100  
0
250  
200  
150  
100  
50  
ꢄ ꢕ ꢎ Tꢂ  
ꢊ ꢎ Tꢂ  
0
0
1
2
3
4
5
6
7
0
40  
80  
120  
160  
200  
V GS [V]  
I D [A]  
+ 6Fꢔ ꢄ ꢔꢊ  
A2 86 ꢎ  
ꢊ ꢅ ꢅ ꢌ ꢃꢄ ꢊ ꢃꢄ ꢄ  
IPP023N04N G  
IPB023N04N G  
9 Drain-source on-state resistance  
10 Typ. gate threshold voltage  
R
9H"\[#4S"T Wꢑꢈ I 9ꢍ ꢌ ꢅ ꢇ ꢈ V =Hꢍ ꢄ ꢅ /  
V
=H"`U#4S"T Wꢑꢈ V =H4V 9Hꢈ I 9ꢍ ꢊ ꢎ ꢅ #6  
5
4
4
3
2
1
0
3
ꢌ ꢖ ꢆ  
2
1
0
`e]  
-60  
-20  
20  
60  
T j [°C]  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
T j [°C]  
11 Typ. capacitances  
12 Forward characteristics of reverse diode  
I <4S"V H9  
C 4S"V 9Hꢑꢈ V =Hꢍ ꢅ /ꢈ f ꢍ ꢄ & " J  
#
A2 B2 >6D6Bꢘ T W  
104  
103  
8V__  
8\__  
ꢄ ꢕ ꢎ Tꢂ ꢏ ꢌ ꢖ ꢆ  
103  
102  
101  
102  
ꢊ ꢎ Tꢂ  
ꢄ ꢕ ꢎ Tꢂ  
ꢊ ꢎ Tꢂ ꢏ ꢌ ꢖ ꢆ  
101  
8^__  
100  
0
0
10  
20  
V DS [V]  
30  
40  
0.5  
1
1.5  
2
V SD [V]  
+ 6Fꢔ ꢄ ꢔꢊ  
A2 86 ꢉ  
ꢊ ꢅ ꢅ ꢌ ꢃꢄ ꢊ ꢃꢄ ꢄ  
IPP023N04N G  
IPB023N04N G  
13 Avalanche characteristics  
6H4S"t 6Kꢑꢈ R =Hꢍ ꢊ ꢎ "  
14 Typ. gate charge  
=H4S"Q TN`Rꢑꢈ I 9ꢍ ꢓ ꢅ ꢇ AE=C65  
V
I
A2 B2 >6D6Bꢘ T W"_`N^`#  
A2 B2 >6D6Bꢘ V 99  
100  
12  
ꢊ ꢎ Tꢂ  
ꢄ ꢅ ꢅ Tꢂ  
ꢊ ꢅ /  
ꢄ ꢎ ꢅ Tꢂ  
10  
8
ꢖ /  
ꢓ ꢊ /  
10  
6
4
2
1
10-1  
0
0
100  
101  
t AV [µs]  
102  
103  
20  
40  
60  
80  
100  
Q gate [nC]  
15 Drain-source breakdown voltage  
16 Gate charge waveforms  
V
7G"9HH#4S"T Wꢑꢈ I 9ꢍ ꢄ >ꢇ  
45  
V =H  
Q g  
40  
35  
30  
25  
20  
V T _"`U#  
Q T"`U#  
Q _c  
Q TQ  
Q gate  
Q T_  
-60  
-20  
20  
60  
100  
140  
180  
T j [°C]  
+ 6Fꢔ ꢄ ꢔꢊ  
A2 86 ꢕ  
ꢊ ꢅ ꢅ ꢌ ꢃꢄ ꢊ ꢃꢄ ꢄ  
IPP023N04N G  
IPB023N04N G  
Package Outline  
PG-TO263-3  
+ 6Fꢔ ꢄ ꢔꢊ  
A2 86 ꢖ  
ꢊ ꢅ ꢅ ꢌ ꢃꢄ ꢊ ꢃꢄ ꢄ  
IPP023N04N G  
IPB023N04N G  
Package Outline  
PG-TO220-3  
+ 6Fꢔ ꢄ ꢔꢊ  
A2 86 ꢌ  
ꢊ ꢅ ꢅ ꢌ ꢃꢄ ꢊ ꢃꢄ ꢄ  
IPP023N04N G  
IPB023N04N G  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© 2008 Infineon Technologies AG  
All Rights Reserved.  
+ 6Fꢔ ꢄ ꢔꢊ  
A2 86 ꢄ ꢅ  
ꢊ ꢅ ꢅ ꢌ ꢃꢄ ꢊ ꢃꢄ ꢄ  

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INFINEON

IPP023NE7N3GXKSA1

 Power Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON

IPP024N06N3G

 OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.
INFINEON

IPP024N06N3GXKSA1

 Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON

IPP026N10NF2S

 Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON

IPP027N08N5

 OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.
INFINEON
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