IPP042N03LG [INFINEON]
OptiMOS?3 Power-Transistor; 的OptiMOS ™ 3功率三极管
| 型号： | IPP042N03LG |
| 厂家： | 
Infineon |
| 描述： | OptiMOS?3 Power-Transistor |
| 文件： | 总10页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPP042N03L G
IPB042N03L G
OptiMOS™3 Power-Transistor
Product Summary
Features
V DS
30
4.2
70
V
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
R DS(on),max
I D
mΩ
A
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPP042N03L G
IPB042N03L G
Package
Marking
PG-TO220-3-1
042N03L
PG-TO263-3
042N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
GS=4.5 V,
Continuous drain current
70
A
70
70
V
62
T C=100 °C
Pulsed drain current2)
I D,pulse
I AS
T C=25 °C
400
70
Avalanche current, single pulse3)
Avalanche energy, single pulse
T C=25 °C
E AS
I D=50 A, R GS=25 Ω
60
mJ
I D=70 A, V DS=24 V,
di /dt =200 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
V
T
j,max=175 °C
V GS
Gate source voltage
1) J-STD20 and JESD22
±20
Rev. 2.0
page 1
2010-02-22
IPP042N03L G
IPB042N03L G
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P tot
T C=25 °C
Power dissipation
79
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
1.9
62
40
K/W
R thJA
minimal footprint
6 cm² cooling area4)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
30
1
-
-
-
V
V GS(th)
V DS=V GS, I D=250 µA
2.2
V DS=30 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
V
DS=30 V, V GS=0 V,
100
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
-
-
10
4.8
3.5
1.5
100 nA
Drain-source on-state resistance5)
R DS(on) V GS=4.5 V, I D=30 A
V GS=10 V, I D=30 A
R G
6
4.2
-
mΩ
Gate resistance
Ω
|V DS|>2|I D|R DS(on)max
,
g fs
Transconductance
44
87
-
S
I D=30 A
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5) Measured from drain tab to source pin
Rev. 2.0
page 2
2010-02-22
IPP042N03L G
IPB042N03L G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
2900
1100
60
3900 pF
V GS=0 V, V DS=15 V,
C oss
Crss
t d(on)
t r
1500
-
f =1 MHz
7.4
-
-
-
-
ns
5.6
V DD=15 V, V GS=10 V,
I D=30 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
28
4.4
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
8.8
4.7
4.2
8.3
18
-
-
-
-
-
-
nC
Q g(th)
Q gd
V
V
DD=15 V, I D=30 A,
GS=0 to 4.5 V
Q sw
Q g
Gate charge total
V plateau
Gate plateau voltage
3.0
V
V DD=15 V, I D=30 A,
GS=0 to 10 V
Q g
Gate charge total
-
38
-
V
V DS=0.1 V,
GS=0 to 4.5 V
Q g(sync)
Gate charge total, sync. FET
Output charge
-
-
16
28
-
-
nC
V
Q oss
V DD=15 V, V GS=0 V
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
70
A
T C=25 °C
I S,pulse
400
V GS=0 V, I F=30 A,
T j=25 °C
V SD
Diode forward voltage
-
-
0.85
-
1.1
20
V
V R=15 V, I F=I S,
di F/dt =400 A/µs
Q rr
Reverse recovery charge
nC
6) See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2010-02-22
IPP042N03L G
IPB042N03L G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
100
80
60
40
20
0
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
10 µs
102
100 µs
0.5
1
DC
0.2
0.1
101
1 ms
10 ms
0.05
0.1
0.02
100
0.01
single pulse
10-1
0
0
0
0
0
0
1
0.01
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 2.0
page 4
2010-02-22
IPP042N03L G
IPB042N03L G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
160
16
4.5 V
5 V
3 V
3.2 V
4 V
3.5 V
10 V
120
12
80
40
0
8
3.5 V
4 V
4.5 V
5 V
3.2 V
4
10 V
11.5 V
3 V
2.8 V
0
0
1
2
3
0
20
40
60
80
100
V DS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
120
80
160
120
80
40
0
40
175 °C
25 °C
0
0
1
2
3
4
5
0
20
40
60
80
100
V GS [V]
ID [A]
Rev. 2.0
page 5
2010-02-22
IPP042N03L G
IPB042N03L G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=30 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=250 µA
8
7
6
2.5
2
5
1.5
1
98 %
4
typ
3
2
1
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
10000
1000
25 °C
Ciss
25 °C, 98%
Coss
103
1000
100
175 °C, 98%
175 °C
102
100
10
Crss
101
10
1
0
5
10
15
V DS [V]
20
25
30
0.0
0.5
1.0
1.5
2.0
V SD [V]
Rev. 2.0
page 6
2010-02-22
IPP042N03L G
IPB042N03L G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=30 A pulsed
V
I
parameter: T j(start)
parameter: V DD
100
12
15 V
6 V
25 °C
10
8
24 V
100 °C
150 °C
10
6
4
2
1
10-1
0
0
100
101
t AV [µs]
102
103
10
20
30
40
50
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
34
32
30
28
26
24
22
20
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.0
page 7
2010-02-22
IPP042N03L G
IPB042N03L G
Package Outline
PG-TO220-3-1
Rev. 2.0
page 8
2010-02-22
IPP042N03L G
IPB042N03L G
Package Outline
PG-TO263-3
Rev. 2.0
page 9
2010-02-22
IPP042N03L G
IPB042N03L G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 2.0
page 10
2010-02-22
相关型号：
IPP048N06LG_10
OptiMOS™ Power-Transistor Features For fast switching converters and sync. rectification
INFINEON
IPP048N12N3 G
120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能，适用于各种应用，支持实现卓越性能。120V OptiMOS™ 技术带来全新可能性，帮助实现优化解决方案。
INFINEON
IPP048N12N3GXKSA1
Power Field-Effect Transistor, 100A I(D), 120V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明