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IPP60R040S7 [INFINEON]

600V CoolMOS™ S7 超结 MOSFET (IPP60R040S7) 针对低导通损耗进行优化，采用 TO-220 封装，可提供最优的 RDS(on) x 价格，适用于低频开关应用，如有源桥式整流器、浪涌继电器、 PLC、 高压 DC 线路、 功率 固态继电器 和固态断路器。600V CoolMOS™ S7 超结 MOSFET 可实现更高的能效，降低 BOM 费用。;
IPP60R040S7
型号： IPP60R040S7
厂家： Infineon    Infineon
描述：

600V CoolMOS™ S7 超结 MOSFET (IPP60R040S7) 针对低导通损耗进行优化，采用 TO-220 封装，可提供最优的 RDS(on) x 价格，适用于低频开关应用，如有源桥式整流器、浪涌继电器、 PLC、 高压 DC 线路、 功率 固态继电器 和固态断路器。600V CoolMOS™ S7 超结 MOSFET 可实现更高的能效，降低 BOM 费用。

开关 高压 继电器 固态继电器 断路器
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IPP60R040S7  
MOSFET  
PG-TOꢀ220  
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice  
tab  
IPP60R040S7ꢀenablesꢀtheꢀbestꢀpriceꢀperformanceꢀforꢀlowꢀfrequency  
switchingꢀapplications.ꢀCoolMOS™ꢀS7ꢀboastsꢀtheꢀlowestꢀRdsonꢀvaluesꢀfor  
aꢀHVꢀSJꢀMOSFET,ꢀwithꢀdistinctiveꢀincreaseꢀofꢀenergyꢀefficiency.  
CoolMOS™ꢀS7ꢀisꢀoptimizedꢀforꢀ“staticꢀswitching”ꢀandꢀhighꢀcurrent  
applications.ꢀItꢀisꢀanꢀidealꢀfitꢀforꢀsolidꢀstateꢀrelayꢀandꢀcircuitꢀbreakerꢀdesigns  
asꢀwellꢀasꢀforꢀlineꢀrectificationꢀinꢀSMPSꢀandꢀinverterꢀtopologies.  
Features  
•ꢀCoolMOS™ꢀS7ꢀtechnologyꢀenablesꢀ40mΩꢀRDS(on)ꢀinꢀtheꢀsmallestꢀfootprint  
•ꢀOptimizedꢀpriceꢀperformanceꢀinꢀlowꢀfrequencyꢀswitchingꢀapplications  
•ꢀHighꢀpulseꢀcurrentꢀcapability  
Drain  
•ꢀTO220ꢀpackageꢀwithꢀtotalꢀPb-freeꢀdieꢀattach  
Pin 2, Tab  
*1  
Benefits  
Gate  
Pin 1  
•ꢀMinimizedꢀconductionꢀlossesꢀ(eliminateꢀ/ꢀreduceꢀheatꢀsink)  
•ꢀIncreasedꢀsystemꢀperformance  
•ꢀMoreꢀcompactꢀandꢀeasierꢀdesign  
Source  
Pin 3  
*1: Internal body diode  
•ꢀLowerꢀBOMꢀor/andꢀTCOꢀoverꢀprolongedꢀlifeꢀtime  
Comparedꢀtoꢀelectromechanicalꢀdevices:  
•ꢀFasterꢀswitchingꢀtimes  
•ꢀMoreꢀreliabilityꢀandꢀlongerꢀsystemꢀlifeꢀtime  
•ꢀShockꢀ&ꢀVibrationꢀresistance  
•ꢀNoꢀcontactꢀarcing,ꢀbouncingꢀorꢀdegradationꢀoverꢀlifeꢀtime  
Potentialꢀapplications  
•ꢀSolidꢀstateꢀrelaysꢀandꢀcircuitꢀbreakers  
•ꢀLineꢀrectificationꢀinꢀhighꢀpower/performanceꢀapplicationsꢀe.g.ꢀComputing,  
Telecom,ꢀUPSꢀandꢀSolar  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
RDS(on),max  
Qg,typ  
Value  
Unit  
mΩ  
nC  
V
40  
83  
VSD  
0.82  
207  
Pulsed ISD, IDS  
A
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPP60R040S7  
PG-TO220-3  
60R040S7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2021-08-20  
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice  
IPP60R040S7  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2021-08-20  
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice  
IPP60R040S7  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
TC=140°C  
Current is limited by Tj max = 150°C;  
Lower case temp does increase  
Drain current rating  
ID  
-
-
13  
A
current capability  
Pulsed drain current1)  
ID,pulse  
EAS  
IAS  
-
-
-
-
-
-
-
-
-
-
-
207  
159  
2.8  
20  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche current, single pulse  
MOSFET dv/dt ruggedness2)  
Gate source voltage (static)  
Gate source voltage (dynamic)  
Power dissipation  
-
mJ  
A
ID=2.8A; VDD=50V; see table 10  
-
-
dv/dt  
VGS  
VGS  
Ptot  
Tstg  
Tj  
-
V/ns VDS=ꢀ0Vꢀtoꢀ300V  
-20  
-30  
-
20  
V
static  
30  
V
AC (f>1 Hz)  
245  
150  
150  
60  
W
°C  
°C  
TC=25°C  
Storage temperature  
-55  
-55  
-
-
-
Operating junction temperature  
Mounting torque  
-
Ncm M3 and M3.5 screws  
TC=140°C  
Current is limited by Tj max = 150°C;  
Lower case temp does increase  
Diode forward current rating  
IS  
-
-
13  
A
current capability  
Diode pulse current1)  
Reverse diode dv/dt3)  
IS,pulse  
-
-
-
-
207  
5
A
TC=25°C  
VDS=0ꢀtoꢀ300V,ꢀISD<=13A,ꢀTj=25°Cꢀꢀꢀ  
dv/dt  
V/ns  
see table 8  
VDS=0ꢀtoꢀ300V,ꢀISD<=13A,ꢀTj=25°Cꢀꢀꢀ  
Maximum diode commutation speed  
Insulation withstand voltage  
dif/dt  
-
-
-
-
820  
n.a.  
A/µs  
see table 8  
VISO  
V
Vrms,ꢀTC=25°C,ꢀt=1min  
1) Pulse width tp limited by Tj,max  
2) The dv/dt has to be limited by appropriate gate resistor  
3) Identical low side and high side switch  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2021-08-20  
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice  
IPP60R040S7  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
0.51  
62  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W leaded  
Thermal resistance, junction - ambient  
for SMD version  
RthJA  
-
-
-
-
-
°C/W n.a.  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
260  
°C  
1.6mm (0.063 in.) from case for 10s  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2021-08-20  
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice  
IPP60R040S7  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
For applications with applied blocking voltage >70% of the specified blocking voltage, it is required that the customer  
evaluates the impact of cosmic radiation effect in early design phase and contacts the Infineon sales office for the  
necessary technical support by Infineon  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
600  
3.5  
Typ.  
-
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
V
V
VGS=0V,ꢀID=1mA  
4.0  
4.5  
VDS=VGS,ꢀID=0.79mA  
-
-
-
20  
2
-
VDS=600V,ꢀVGS=0V,ꢀTj=25°C  
VDS=600V,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
0.036 0.040  
0.085  
VGS=12V,ꢀID=13A,ꢀTj=25°C  
VGS=12V,ꢀID=13A,ꢀTj=150°C  
RDS(on)  
RG  
-
-
0.8  
-
Ω
f=1MHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
3127  
50  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=300V,ꢀf=250kHz  
VGS=0V,ꢀVDS=300V,ꢀf=250kHz  
Coss  
Effective output capacitance, energy  
related1)  
Co(er)  
-
168  
-
pF  
VGS=0V,ꢀVDS=0ꢀtoꢀ300V  
Effective output capacitance, time  
related2)  
Co(tr)  
Qoss  
td(on)  
-
-
-
1475  
443  
25  
-
-
-
pF  
nC  
ns  
ID=constant,ꢀVGS=0V,ꢀVDS=0ꢀtoꢀ300V  
VGS=0V,ꢀVDS=0ꢀtoꢀ300V  
Output charge  
VDD=300V,ꢀVGS=13V,ꢀID=13A,  
RG=8Ω;ꢀseeꢀtableꢀ9  
Turn-on delay time  
VDD=300V,ꢀVGS=13V,ꢀID=13A,  
RG=8Ω;ꢀseeꢀtableꢀ9  
Rise time  
tr  
-
-
-
10  
138  
9
-
-
-
ns  
ns  
ns  
VDD=300V,ꢀVGS=13V,ꢀID=13A,  
RG=8Ω;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
VDD=300V,ꢀVGS=13V,ꢀID=13A,  
RG=8Ω;ꢀseeꢀtableꢀ9  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
17  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=300V,ꢀID=13A,ꢀVGS=0ꢀtoꢀ12V  
VDD=300V,ꢀID=13A,ꢀVGS=0ꢀtoꢀ12V  
VDD=300V,ꢀID=13A,ꢀVGS=0ꢀtoꢀ12V  
VDD=300V,ꢀID=13A,ꢀVGS=0ꢀtoꢀ12V  
Qgd  
28  
Qg  
83  
Gate plateau voltage  
Vplateau  
5.4  
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V  
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V  
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2021-08-20  
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice  
IPP60R040S7  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
0.82  
-
V
VGS=0V,ꢀIF=13A,ꢀTj=25°C  
VR=300V,ꢀIF=13A,ꢀdiF/dt=100A/µs;  
see table 8  
-
-
-
360  
5.5  
32  
-
-
-
ns  
VR=300V,ꢀIF=13A,ꢀdiF/dt=100A/µs;  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=300V,ꢀIF=13A,ꢀdiF/dt=100A/µs;  
see table 8  
Peak reverse recovery current  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2021-08-20  
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice  
IPP60R040S7  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
250  
103  
1 µs  
102  
101  
200  
150  
100  
50  
10 µs  
100 µs  
100  
1 ms  
10-1  
10-2  
10-3  
10 ms  
DC  
0
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
100  
102  
101  
1 µs  
10 µs  
0.5  
100 µs  
0.2  
100  
10-1  
0.1  
1 ms  
10-1  
10-2  
10-3  
0.05  
10 ms  
0.02  
0.01  
DC  
single pulse  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2021-08-20  
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice  
IPP60R040S7  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
350  
200  
20 V  
20 V  
300  
12 V  
160  
120  
80  
40  
0
12 V  
10 V  
250  
10 V  
8 V  
200  
8 V  
150  
100  
50  
0
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
0.110  
2.5  
8 V  
0.101  
2.0  
1.5  
1.0  
0.5  
10 V  
0.092  
0.083  
0.074  
0.065  
12 V  
20 V  
0
50  
100  
150  
200  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=13ꢀA;ꢀVGS=12ꢀV  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2021-08-20  
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice  
IPP60R040S7  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
350  
12  
300  
25 °C  
10  
8
120 V  
300 V  
250  
200  
6
150 °C  
150  
4
100  
50  
0
2
0
0
2
4
6
8
10  
12  
0
15  
30  
45  
60  
75  
90  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=13ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
103  
103  
102  
102  
25 °C  
101  
101  
125 °C  
125 °C  
25 °C  
100  
100  
10-1  
10-1  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VSDꢀ[V]  
VSDꢀ[V]  
IF=f(VSD);ꢀVGS=0ꢀV;ꢀparameter:ꢀTj  
IF=f(VSD);ꢀVGS=12ꢀV;ꢀparameter:ꢀTj  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2021-08-20  
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice  
IPP60R040S7  
Diagramꢀ13:ꢀAvalancheꢀenergy  
Diagramꢀ14:ꢀDrain-sourceꢀbreakdownꢀvoltage  
160  
680  
660  
640  
620  
600  
580  
560  
540  
120  
80  
40  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tjꢀ[°C]  
Tjꢀ[°C]  
EAS=f(Tj);ꢀID=2.8ꢀA;ꢀVDD=50ꢀV  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Diagramꢀ15:ꢀTyp.ꢀcapacitances  
Diagramꢀ17:ꢀTyp.ꢀQossꢀoutputꢀcharge  
105  
450  
400  
350  
300  
250  
200  
150  
100  
50  
104  
Ciss  
103  
102  
Coss  
101  
Crss  
100  
0
0
50  
100  
150  
200  
250  
300  
0
50  
100  
150  
200  
250  
300  
VDSꢀ[V]  
VDSꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz  
Qoss=f(VDS);ꢀVGS=0ꢀV  
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2021-08-20  
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice  
IPP60R040S7  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
Rg1  
VDS  
Rg 2  
IF  
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2021-08-20  
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice  
IPP60R040S7  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
j
m
m
c
j
m
m
MILLIMETERS  
DIM  
INCHES  
MIN  
4.30  
1.17  
2.15  
0.65  
0.95  
0.95  
0.65  
0.33  
14.81  
8.51  
12.19  
9.70  
6.50  
MAX  
4.57  
1.40  
2.72  
0.86  
1.40  
1.15  
1.15  
0.60  
15.95  
9.45  
13.10  
10.36  
8.60  
MIN  
MAX  
DOCUMENT NO.  
Z8B00003318  
A
A1  
A2  
b
0.169  
0.046  
0.085  
0.026  
0.037  
0.037  
0.026  
0.013  
0.583  
0.335  
0.480  
0.382  
0.256  
0.180  
0.055  
0.107  
0.034  
0.055  
0.045  
0.045  
0.024  
0.628  
0.372  
0.516  
0.408  
0.339  
0
SCALE  
b1  
b2  
b3  
c
2.5  
0
2.5  
5mm  
D
D1  
D2  
E
EUROPEAN PROJECTION  
E1  
e
2.54  
5.08  
3
0.100  
0.200  
3
e1  
N
ISSUE DATE  
H1  
L
5.90  
13.00  
-
6.90  
14.00  
4.80  
3.89  
3.00  
0.232  
0.512  
-
0.272  
0.551  
0.189  
0.153  
0.118  
30-07-2009  
REVISION  
L1  
¡3  
Q
06  
3.60  
2.60  
0.142  
0.102  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO220-3,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
12  
Rev.ꢀ2.1,ꢀꢀ2021-08-20  
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice  
IPP60R040S7  
7ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSꢀS7ꢀWebpage:ꢀwww.infineon.com  
• IFXꢀCoolMOSꢀS7ꢀapplicationꢀnote:ꢀwww.infineon.com  
• IFXꢀCoolMOSꢀS7ꢀsimulationꢀmodel:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
13  
Rev.ꢀ2.1,ꢀꢀ2021-08-20  
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice  
IPP60R040S7  
RevisionꢀHistory  
IPP60R040S7  
Revision:ꢀ2021-08-20,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
Release of final version  
2021-08-10  
2021-08-20  
Change of wording regarding breakdown voltage / cosmic ray  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
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AllꢀRightsꢀReserved.  
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(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
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failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
14  
Rev.ꢀ2.1,ꢀꢀ2021-08-20  

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