IPP60R125CP_07 [INFINEON]
CoolMOSTM Power Transistor; CoolMOSTM功率晶体管
| 型号： | IPP60R125CP_07 |
| 厂家： | 
Infineon |
| 描述： | CoolMOSTM Power Transistor |
| 文件： | 总10页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPP60R125CP
CoolMOSTM Power Transistor
Features
Product Summary
DS @ Tj,max
R DS(on),max
Q g,typ
V
650
0.125
53
V
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
Ω
nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO220
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching topologies, for Server and Telecom
Type
Package
Ordering Code
Marking
IPP60R125CP
PG-TO220
SP000088488
6R125P
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
25
16
Continuous drain current
A
Pulsed drain current2)
82
I D,pulse
E AS
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
Avalanche energy, single pulse
Avalanche energy, repetitive t AR
708
1.2
mJ
2),3)
2),3)
E AR
I AR
11
A
Avalanche current, repetitive t AR
MOSFET dv /dt ruggedness
Gate source voltage
V
DS=0...480 V
50
dv /dt
V GS
V/ns
V
±20
±30
208
-55 ... 150
60
static
AC (f >1 Hz)
T C=25 °C
P tot
Power dissipation
W
T j, T stg
Operating and storage temperature
Mounting torque
°C
M3 and M3.5 screws
page 1
Ncm
Rev. 2.2
2007-08-28
IPP60R125CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
16
Parameter
Symbol Conditions
Unit
I S
Continuous diode forward current
Diode pulse current2)
A
T C=25 °C
I S,pulse
82
Reverse diode dv /dt 4)
dv /dt
15
V/ns
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
0.6
62
K/W
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
1.6 mm (0.063 in.)
from case for 10 s
T sold
-
-
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=250 µA
DS=V GS, I D=1.1 mA
Drain-source breakdown voltage
Gate threshold voltage
600
2.5
-
-
V
3
3.5
V
DS=600 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
2
-
µA
T j=25 °C
V
DS=600 V, V GS=0 V,
-
-
-
20
-
T j=150 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=16 A,
Gate-source leakage current
100 nA
R DS(on)
Drain-source on-state resistance
0.11
0.125
Ω
T j=25 °C
V
GS=10 V, I D=16 A,
-
-
0.30
2.1
-
T j=150 °C
R G
Gate resistance
f =1 MHz, open drain
-
Ω
Rev. 2.2
page 2
2007-08-28
IPP60R125CP
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
-
-
2500
120
-
-
pF
ns
V
GS=0 V, V DS=100 V,
f =1 MHz
C oss
Output capacitance
Effective output capacitance, energy
C o(er)
-
-
110
300
-
-
related5)
V
GS=0 V, V DS=0 V
Effective output capacitance, time
to 480 V
C o(tr)
related6)
t d(on)
t r
t d(off)
t f
Turn-on delay time
-
-
-
-
15
5
-
-
-
-
V
V
DD=400 V,
GS=10 V, I D=16 A,
Rise time
Turn-off delay time
Fall time
50
5
R G=3.3 Ω
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
12
18
53
5.0
-
-
nC
Q gd
V
V
DD=400 V, I D=16 A,
GS=0 to 10 V
Q g
70
-
V plateau
Gate plateau voltage
V
V
Reverse Diode
V
GS=0 V, I F=16 A,
V SD
Diode forward voltage
-
0.9
1.2
T j=25 °C
t rr
Reverse recovery time
-
-
-
430
9
-
-
-
ns
µC
A
V R=400 V, I F=I S,
di F/dt =100 A/µs
Q rr
I rrm
Reverse recovery charge
Peak reverse recovery current
42
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4)
I
SD
=ID, di/dt<=200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5) C o(er) is a fixed capacitance that gives the same stored energy asC oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time asC oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.2
page 3
2007-08-28
IPP60R125CP
1 Power dissipation
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
P
tot=f(T C)
102
250
limited by on-state
resistance
1 µs
10 µs
200
150
100
50
100 µs
1 ms
10 ms
101
DC
100
10-1
0
0
100
101
102
103
40
80
120
160
T
C [°C]
V DS [V]
3 Max. transient thermal impedance
thJC=f(t P)
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
Z
parameter: D=t p/T
parameter: V GS
100
120
105
90
75
60
45
30
15
0
8 V
10 V
20 V
0.5
0.2
7 V
10-1
0.1
6 V
0.05
0.02
5.5 V
0.01
5 V
4.5 V
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
0
5
10
DS [V]
15
20
t
p [s]
V
Rev. 2.2
page 4
2007-08-28
IPP60R125CP
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
6 Typ. drain-source on-state resistance
DS(on)=f(I D); T j=150 °C
R
parameter: V GS
50
40
30
20
10
0
0.5
6 V
7 V
6.5 V
5 V
5.5 V
8 V
6 V
7 V
10 V
20 V
0.4
0.3
0.2
0.1
20 V
5.5 V
5 V
4.5 V
0
0
0
5
10
DS [V]
15
20
10
20
30
40
50
I
D [A]
V
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
R
DS(on)=f(T j); I D=16 A; V GS=10 V
0.4
120
80
40
0
C °25
0.3
0.2
C °150
98 %
typ
0.1
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
T j [°C]
V GS [V]
Rev. 2.2
page 5
2007-08-28
IPP60R125CP
9 Typ. gate charge
GS=f(Q gate); I D=16 A pulsed
10 Forward characteristics of reverse diode
I F=f(V SD
V
)
parameter: V DD
parameter: T j
102
10
9
8
7
6
5
4
3
2
1
0
25 °C, 98%
150 °C, 98%
120 V
25 °C
400 V
150 °C
101
100
10-1
0
0.5
1
1.5
2
0
10
20
30
gate [nC]
40
50
60
Q
V
SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E
AS=f(T j); I D=11 A; V DD=50 V
V
BR(DSS)=f(T j); I D=0.25 mA
800
700
600
400
200
0
660
620
580
540
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
Rev. 2.2
page 6
2007-08-28
IPP60R125CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
105
20
104
16
12
8
Ciss
103
102
Coss
101
4
Crss
100
0
0
0
100
200
300
DS [V]
400
500
100
200
300
400
500
600
V
DS [V]
V
Rev. 2.2
page 7
2007-08-28
IPP60R125CP
Definition of diode switching characteristics
Rev. 2.2
page 8
2007-08-28
IPP60R125CP
PG-TO220-3-1/TO-220-3-21: Outlines
Dimensions in mm/inches:
Rev. 2.2
page 9
2007-08-28
IPP60R125CP
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 2.2
page 10
2007-08-28
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