IPP65R060CFD7 [INFINEON]
英飞凌 650V CoolMOS™ CFD7 超结 MOSFET IPW65R029CFD7 采用 TO-247 封装,尤为适用于诸如服务器、电信、太阳能和电动汽车充电站等工业应用中的谐振拓扑结构。相较于竞品,该产品可显著提高效率。;![IPP65R060CFD7](http://pdffile.icpdf.com/pdf2/p00366/img/icpdf/IPP65R060CFD_2239786_icpdf.jpg)
型号: | IPP65R060CFD7 |
厂家: | ![]() |
描述: | 英飞凌 650V CoolMOS™ CFD7 超结 MOSFET IPW65R029CFD7 采用 TO-247 封装,尤为适用于诸如服务器、电信、太阳能和电动汽车充电站等工业应用中的谐振拓扑结构。相较于竞品,该产品可显著提高效率。 电站 服务器 电信 |
文件: | 总14页 (文件大小:1042K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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IPP65R060CFD7
MOSFET
PG-TOꢀ220
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
tab
Theꢀlatestꢀ650ꢀVꢀCoolMOS™ꢀCFD7ꢀextendsꢀtheꢀvoltageꢀclassꢀofferingꢀof
theꢀCFD7ꢀfamilyꢀandꢀisꢀaꢀsuccessorꢀtoꢀtheꢀ650ꢀVꢀCoolMOS™ꢀCFD2.
Resultingꢀfromꢀimprovedꢀswitchingꢀperformanceꢀandꢀexcellentꢀthermal
behavior,ꢀ650ꢀVꢀCooMOS™ꢀCFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonant
switchingꢀtopologies,ꢀsuchꢀasꢀLLCꢀandꢀphase-shift-full-bridgeꢀ(ZVS).ꢀAs
partꢀofꢀInfineon’sꢀfastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblends
allꢀadvantagesꢀofꢀaꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhard
commutationꢀrobustness.ꢀTheꢀCoolMOS™ꢀCFD7ꢀtechnologyꢀmeets
highestꢀefficiencyꢀandꢀreliabilityꢀstandardsꢀandꢀfurthermoreꢀsupportsꢀhigh
powerꢀdensityꢀsolutions.
Features
•ꢀUltra-fastꢀbodyꢀdiode
Drain
Pin 2, Tab
•ꢀ650Vꢀbreakꢀdownꢀvoltage
•ꢀBest-in-classꢀRDS(on)
•ꢀReducedꢀswitchingꢀlosses
•ꢀLowꢀRDS(on)ꢀdependencyꢀoverꢀtemperature
Gate
Pin 1
Source
Pin 3
Benefits
•ꢀExcellentꢀhardꢀcommutationꢀruggedness
•ꢀExtraꢀsafetyꢀmarginꢀforꢀdesignsꢀwithꢀincreasedꢀbusꢀvoltage
•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions
•ꢀOutstandingꢀlightꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications
•ꢀImprovedꢀfullꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications
•ꢀPriceꢀcompetitivenessꢀoverꢀpreviousꢀCoolMOS™ꢀfamilies
Potentialꢀapplications
SuitableꢀforꢀSoftꢀSwitchingꢀtopologies
Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,
Telecom,ꢀEVꢀCharging,ꢀSolar
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Value
700
60
Unit
V
mΩ
nC
A
Qg,typ
68
ID,pulse
146
9.5
Eoss @ 400V
Body diode diF/dt
µJ
1300
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPP65R060CFD7
PG-TO220-3
65R060F7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2020-08-12
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R060CFD7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2020-08-12
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R060CFD7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
36
23
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
EAR
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
146
171
0.86
5.1
120
20
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
mJ
mJ
A
ID=5.1A; VDD=50V; see table 10
-
ID=5.1A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
AC (f>1 Hz)
171
150
150
60
W
°C
°C
TC=25°C
Storage temperature
-55
-55
-
-
-
Operating junction temperature
Mounting torque
-
Ncm M3 and M3.5 screws
Continuous diode forward current1)
Diode pulse current2)
IS
-
36
A
A
TC=25°C
TC=25°C
IS,pulse
-
146
VDS=0...400V,ꢀISD<=16.4A,ꢀTj=25°Cꢀꢀ
Reverse diode dv/dt3)
dv/dt
-
-
70
V/ns
see table 8
VDS=0...400V,ꢀISD<=16.4A,ꢀTj=25°Cꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
diF/dt
-
-
-
-
1300 A/µs
n.a.
see table 8
VISO
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj max
.
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2020-08-12
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R060CFD7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.73
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2020-08-12
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R060CFD7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
4
4.5
VDS=VGS,ꢀID=0.86mA
-
-
-
13
1
37
VDS=650V,ꢀVGS=0V,ꢀTj=25°C
VDS=650V,ꢀVGS=0V,ꢀTj=125°C
Zero gate voltage drain current1)
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.052 0.060
0.115
VGS=10V,ꢀID=16.4A,ꢀTj=25°C
VGS=10V,ꢀID=16.4A,ꢀTj=150°C
RDS(on)
RG
-
-
5.8
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
3288
51
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related2)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
119
1231
31
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related3)
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=16.4A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=16.4A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
14
VDD=400V,ꢀVGS=13V,ꢀID=16.4A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
114
4
VDD=400V,ꢀVGS=13V,ꢀID=16.4A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
19
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=16.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=16.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=16.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=16.4A,ꢀVGS=0ꢀtoꢀ10V
Qgd
21
Qg
68
Gate plateau voltage
Vplateau
5.7
1) Maximum specification is defined by calculated six sigma upper confidence bound
2)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
3)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2020-08-12
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R060CFD7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
1.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=16.4A,ꢀTj=25°C
VR=400V,ꢀIF=16.4A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
156
234
1.72
-
ns
VR=400V,ꢀIF=16.4A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
0.86
10.1
µC
A
VR=400V,ꢀIF=16.4A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2020-08-12
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R060CFD7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
200
103
1 µs
102
101
150
100
50
10 µs
100 µs
1 ms
100
10-1
0
10-2
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
102
101
0.5
0.2
1 µs
10 µs
10-1
0.1
100 µs
100
0.05
0.02
0.01
1 ms
10-1
single pulse
10-2
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2020-08-12
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R060CFD7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
300
150
20 V
10 V
250
8 V
20 V
120
90
60
30
0
10 V
7 V
200
8 V
150
100
7 V
6 V
50
5.5 V
5 V
6 V
5.5 V
4.5 V
10
5 V
15
4.5 V
0
0
5
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.155
2.5
5.5 V
7 V
6.5 V
0.145
0.135
0.125
0.115
0.105
0.095
6 V
2.0
1.5
1.0
0.5
10 V
20 V
0
50
100
150
200
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=16.4ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2020-08-12
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R060CFD7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
250
12
10
8
200
150
100
50
25 °C
120 V
400 V
150 °C
6
4
2
0
0
0
2
4
6
8
10
12
0
20
40
60
80
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=16.4ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
200
150
100
50
101
25 °C
125 °C
100
10-1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=5.1ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2020-08-12
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R060CFD7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
730
105
700
670
640
610
580
104
Ciss
103
102
Coss
101
Crss
100
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
15
10
5
0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2020-08-12
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R060CFD7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2020-08-12
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R060CFD7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
j
m
m
c
j
m
m
MILLIMETERS
INCHES
DIM
MIN
4.30
1.17
2.15
0.65
0.95
0.95
0.65
0.33
14.81
8.51
12.19
9.70
6.50
MAX
4.57
MIN
MAX
DOCUMENT NO.
Z8B00003318
A
A1
A2
b
0.169
0.046
0.085
0.026
0.037
0.037
0.026
0.013
0.583
0.335
0.480
0.382
0.256
0.180
0.055
0.107
0.034
0.055
0.045
0.045
0.024
0.628
0.372
0.516
0.408
0.339
1.40
2.72
0.86
1.40
1.15
1.15
0.60
15.95
9.45
13.10
10.36
8.60
0
SCALE
b1
b2
b3
c
2.5
0
2.5
5mm
D
D1
D2
E
EUROPEAN PROJECTION
E1
e
2.54
5.08
3
0.100
0.200
3
e1
N
ISSUE DATE
30-07-2009
H1
L
5.90
13.00
-
6.90
14.00
4.80
3.89
3.00
0.232
0.512
-
0.272
0.551
0.189
0.153
0.118
REVISION
L1
¡3
Q
06
3.60
2.60
0.142
0.102
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO220-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2020-08-12
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R060CFD7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀCFD7ꢀ650VꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7ꢀ650Vꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7ꢀ650Vꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2020-08-12
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R060CFD7
RevisionꢀHistory
IPP65R060CFD7
Revision:ꢀ2020-08-12,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2.1
2020-06-23
2020-08-12
Increased continuous diode forward current rating
Trademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
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Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2020ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
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(“Beschaffenheitsgarantie”)ꢀ.
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.1,ꢀꢀ2020-08-12
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00368/img/page/IPP65R065C7_2250212_files/IPP65R065C7_2250212_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00368/img/page/IPP65R065C7_2250212_files/IPP65R065C7_2250212_2.jpg)
IPP65R065C7
英飞凌的 CoolMOS™ C7 超结 MOSFET 系列是技术的一次突破性进步,在全球范围内实现了低 RDS(on)/封装,并且得益于其低开关损耗,可在全负载范围内提高效率。
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00316/img/page/IPP65R074C6X_1898271_files/IPP65R074C6X_1898271_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00316/img/page/IPP65R074C6X_1898271_files/IPP65R074C6X_1898271_2.jpg)
IPP65R074C6XKSA1
Power Field-Effect Transistor, 650V, 0.074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00367/img/page/IPP65R075CFD_2243347_files/IPP65R075CFD_2243347_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00367/img/page/IPP65R075CFD_2243347_files/IPP65R075CFD_2243347_2.jpg)
IPP65R075CFD7A
TO-220 封装中的 75 mOhm IPP65R075CFD7A 是汽车级认证 650V CoolMOS™ SJ 功率 MOSFET CFD7A 系列中的一款产品。与上一代产品相比,CoolMOS™ CFD7A 具有更高的可靠性和功率密度,同时增强了设计灵活性。
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00315/img/page/IPP65R095C7_1894763_files/IPP65R095C7_1894763_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00315/img/page/IPP65R095C7_1894763_files/IPP65R095C7_1894763_2.jpg)
IPP65R095C7
Power Field-Effect Transistor, 24A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00315/img/page/IPP65R095C7_1894763_files/IPP65R095C7_1894763_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00315/img/page/IPP65R095C7_1894763_files/IPP65R095C7_1894763_2.jpg)
IPP65R095C7XKSA1
Power Field-Effect Transistor, 24A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00315/img/page/IPI65R099C6_1891943_files/IPI65R099C6_1891943_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00315/img/page/IPI65R099C6_1891943_files/IPI65R099C6_1891943_2.jpg)
IPP65R099C6XKSA1
Power Field-Effect Transistor, 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00364/img/page/IPP65R099CFD_2229667_files/IPP65R099CFD_2229667_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00364/img/page/IPP65R099CFD_2229667_files/IPP65R099CFD_2229667_2.jpg)
IPP65R099CFD7A
TO-220 封装中的 99mOhm IPP65R099CFD7A 是汽车级认证 650V CoolMOS™ SJ 功率 MOSFET CFD7A 系列中的一款产品。与上一代产品相比,CoolMOS™ CFD7A 具有更高的可靠性和功率密度,同时增强了设计灵活性。
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00362/img/page/IPP65R110CFD_2216334_files/IPP65R110CFD_2216334_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00362/img/page/IPP65R110CFD_2216334_files/IPP65R110CFD_2216334_2.jpg)
IPP65R110CFD7
英飞凌 650V CoolMOS™ CFD7 超结 MOSFET IPP65R110CFD7 采用 TO-220 封装,尤为适用于诸如服务器、电信、太阳能和电动汽车充电站等工业应用中的谐振拓扑结构。相较于竞品,该产品可显著提高效率。作为 CFD2 超结 MOSFET 系列的后续产品,IPP65R110CFD7 的栅极电荷更低,关断行为得以改善,反向恢复电荷较低,从而可显著提高效率与功率密度,且击穿电压可额外提高 50V。
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00268/img/page/IPB65R110CFD_1610317_files/IPB65R110CFD_1610317_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00268/img/page/IPB65R110CFD_1610317_files/IPB65R110CFD_1610317_2.jpg)
IPP65R110CFDA
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00309/img/page/IPP65R110CFD_1859079_files/IPP65R110CFD_1859079_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00309/img/page/IPP65R110CFD_1859079_files/IPP65R110CFD_1859079_2.jpg)
IPP65R110CFDAAKSA1
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
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