IPP77N06S309AKSA1 [INFINEON]
Power Field-Effect Transistor, 77A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN;
| 型号： | IPP77N06S309AKSA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 77A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN |
| 文件： | 总9页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
OptiMOS®-T2 Power-Transistor
Product Summary
VDS
55
8.8
77
V
R
DS(on),max (SMD version)
mΩ
A
I D
Features
• N-channel - Enhancement mode
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPB77N06S3-09
IPI77N06S3-09
IPP77N06S3-09
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
3N0609
3N0609
3N0609
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
I D
T C=25 °C, VGS=10 V
T C=100 °C,
Continuous drain current
77
55
A
V
GS=10 V2)
Pulsed drain current1)
Avalanche energy, single pulse1)
I D,pulse
EAS
T C=25 °C
I D=38.5 A
160
245
mJ
A
I AS
Avalanche current, single pulse
77
Gate source voltage2)
VGS
±20
V
Ptot
T C=25 °C
Power dissipation
107
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... +175
55/175/56
Rev. 1.1
page 1
2007-11-07
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics1)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
1.4
62
K/W
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0 V, I D= 1 mA
DS=VGS, I D=55 µA
Drain-source breakdown voltage
Gate threshold voltage
55
-
-
V
2.1
3.0
4
V
DS=55 V, VGS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.01
1
1
µA
T j=25 °C
V
DS=55 V, VGS=0 V,
100
T j=125 °C2)
I GSS
V
V
GS=16 V, VDS=0 V
GS=10 V, I D=39 A
Gate-source leakage current
-
-
1
100 nA
R DS(on)
Drain-source on-state resistance
7.7
9.1
mΩ
V
GS=10 V, I D=39 A,
-
7.4
8.8
SMD version
Rev. 1.1
page 2
2007-11-07
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
5335
812
775
29
-
-
-
-
-
-
-
pF
ns
V
GS=0 V, VDS=25 V,
f =1 MHz
V
V
DD=27.5 V,
GS=10 V, I D=77 A,
51
t d(off)
t f
Turn-off delay time
Fall time
29
R G=10 Ω
51
Gate Charge Characteristics1)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
41
17
77
7.1
-
nC
Q gd
-
103
-
V
V
DD=11 V, I D=77 A,
GS=0 to 10 V
Q g
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current1)
Diode pulse current1)
I S
-
-
-
-
77
T C=25 °C
I S,pulse
160
V
GS=0 V, I F=77 A,
VSD
Diode forward voltage
1
1.3
V
T j=25 °C
Reverse recovery time1)
Reverse recovery charge1)
t rr
-
-
40
50
-
-
ns
VR=27.5 V, I F=I S,
diF/dt =100 A/µs
Q rr
nC
1) Defined by design. Not subject to production test.
2) Qualified at -5V and +16V
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2007-11-07
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS ≥ 4 V
I D = f(T C); VGS ≥ 4 V
120
100
80
60
40
20
0
100
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
Z
parameter: D =t p/T
101
1000
100
10
1 µs
100
0.5
10 µs
100 µs
0.1
1 ms
10-1
0.05
0.01
10-2
single pulse
10-3
1
10-7
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t p [s]
V
DS [V]
Rev. 1.1
page 4
2007-11-07
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
DS(on) = f(I D); T j = 25 °C
R
parameter: VGS
25
160
10 V
7 V
140
120
100
80
8 V
20
15
10
7 V
60
6.5 V
6 V
8 V
40
9 V
5.5 V
10 V
20
0
5
0
0
1
2
3
4
5
6
7
20
40
60
80
100
V
DS [V]
I
D [A]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 10 V
parameter: T j
8 Typ. drain-source on-state resistance
R
DS(on) = f(T j); I D = 39 A; VGS = 10 V
200
150
100
50
15
13
11
9
-55 °C
25 °C
7
175 °C
5
0
3
2
3
4
5
6
7
8
-60
-20
20
60
100
140
180
V
GS [V]
T j [°C]
Rev. 1.1
page 5
2007-11-07
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
10 Typ. capacitances
V
C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: I D
105
4
Ciss
3.5
3
Coss
550µA
55µA
2.5
2
Crss
104
1.5
1
0.5
103
0
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
V
DS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
AV = f(t AV
IF = f(VSD)
I
)
parameter: T j
parameter: Tj(start)
103
100
25°C
100°C
150°C
102
10
25 °C
175 °C
101
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
1
10
AV [µs]
100
1000
V
SD [V]
t
Rev. 1.1
page 6
2007-11-07
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
13 Typical avalanche Energy
AS = f(T j)
14 Drain-source breakdown voltage
BR(DSS) = f(T j); I D = 1 mA
E
V
parameter: I D
66
64
62
60
58
56
54
52
50
48
46
600
20 A
500
400
300
200
100
0
40 A
80 A
0
50
100
150
200
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
15 Typ. gate charge
GS = f(Q gate); I D = 80 A pulsed
16 Gate charge waveforms
V
parameter: VDD
12
VGS
11 V
44 V
10
8
Qg
6
4
2
Qgate
Qgd
Qgs
0
0
20
40
60
80
100
120
Q
gate [nC]
Rev. 1.1
page 7
2007-11-07
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.1
page 8
2007-11-07
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
Revision History
Version
Date
Changes
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 1.1
Data Sheet 1.1
Data Sheet 1.1
Data Sheet 1.1
15.12.2006 Removal of ordering code
15.12.2006 Update of Infineon Logo
Implementation of avalanche
15.12.2006 current single pulse
15.12.2006 Removal of ESD class
15.12.2006 Update of Infineon address
Removal of foot note 3, avalanche
15.12.2006 diagrams
15.12.2006 Update of trr and Qrr typ
15.12.2006 Update of disclaimer
Implementation of RoHS and AEC
15.12.2006 logo, update of feature list
07.11.2007 Update of data sheet layout
07.11.2007 Adaptation of Ias
implementation of footnote 2 for
07.11.2007 Eas specification
removal of Vdg specification from
07.11.2007 data sheet
Rev. 1.1
page 9
2007-11-07
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