IPP80R750P7 [INFINEON]
800V CoolMOS™ P7超结MOSFET系列完全适合低功率SMPS应用，可完全满足性能，易用性和性价比等市场需求。它主要侧重于反激式应用，包括适配器和充电器，LED驱动器，音频SMPS，辅助和工业电源。;
| 型号： | IPP80R750P7 |
| 厂家： | 
Infineon |
| 描述： | 800V CoolMOS™ P7超结MOSFET系列完全适合低功率SMPS应用，可完全满足性能，易用性和性价比等市场需求。它主要侧重于反激式应用，包括适配器和充电器，LED驱动器，音频SMPS，辅助和工业电源。 驱动 驱动器 |
| 文件： | 总13页 (文件大小：945K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPP80R750P7
MOSFET
PG-TOꢀ220
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
tab
Theꢀlatestꢀ800VꢀCoolMOS™ꢀP7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀ800V
superꢀjunctionꢀtechnologiesꢀandꢀcombinesꢀbest-in-classꢀperformanceꢀwith
stateꢀofꢀtheꢀartꢀease-of-use,ꢀresultingꢀfromꢀInfineon’sꢀoverꢀ18ꢀyears
pioneeringꢀsuperꢀjunctionꢀtechnologyꢀinnovation.
Features
•ꢀBest-in-classꢀFOMꢀRDS(on)ꢀ*ꢀEoss;ꢀreducedꢀQg,ꢀCiss,ꢀandꢀCoss
•ꢀBest-in-classꢀDPAKꢀRDS(on)
•ꢀBest-in-classꢀV(GS)thꢀofꢀ3VꢀandꢀsmallestꢀꢀV(GS)thꢀvariationꢀofꢀ±0.5V
•ꢀIntegratedꢀZenerꢀDiodeꢀESDꢀprotection
•ꢀFullyꢀqualifiedꢀacc.ꢀJEDECꢀforꢀIndustrialꢀApplications
•ꢀFullyꢀoptimizedꢀportfolio
Drain
Pin 2, Tab
Benefits
•ꢀBest-in-classꢀperformance
Gate
Pin 1
•ꢀEnablingꢀhigherꢀpowerꢀdensityꢀdesigns,ꢀBOMꢀsavingsꢀandꢀlower
assemblyꢀcosts
•ꢀEasyꢀtoꢀdriveꢀandꢀtoꢀparallel
Source
Pin 3
•ꢀBetterꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures
•ꢀLessꢀproductionꢀissuesꢀandꢀreducedꢀfieldꢀreturns
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀforꢀfineꢀtuningꢀofꢀdesigns
Potentialꢀapplications
RecommendedꢀforꢀhardꢀandꢀsoftꢀswitchingꢀflybackꢀtopologiesꢀforꢀLED
Lighting,ꢀlowꢀpowerꢀChargersꢀandꢀAdapters,ꢀAudio,ꢀAUXꢀpowerꢀand
Industrialꢀpower.ꢀAlsoꢀsuitableꢀforꢀPFCꢀstageꢀinꢀConsumerꢀapplications
andꢀSolar.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj=25°C
RDS(on),max
Qg,typ
Value
800
0.75
17
Unit
V
Ω
nC
A
ID
7
Eoss @ 500V
VGS(th),typ
1.6
3
µJ
V
ESD class (HBM)
2
-
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPP80R750P7
PG-TO 220-3
80R750P7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2018-02-08
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPP80R750P7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2018-02-08
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPP80R750P7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
7
4.6
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
-
-
-
-
-
-
-
-
-
-
17
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
16
mJ
mJ
A
ID=1.1A; VDD=50V
ID=1.1A; VDD=50V
-
EAR
0.14
1.1
100
IAR
dv/dt
V/ns VDS=0ꢀtoꢀ400V
-20
-30
-
-
20
30
static;
V
Gate source voltage
VGS
AC (f>1 Hz)
Power dissipation
Ptot
-
-
-
-
-
-
-
-
51
150
60
5.1
17
1
W
TC=25°C
Operating and storage temperature
Mounting torque
Tj,ꢀTstg
-
-55
°C
-
-
-
-
-
-
Ncm M3 and M3.5 screws
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
IS
A
A
TC=25°C
IS,pulse
dv/dt
TC=25°C
V/ns VDS=0ꢀtoꢀ400V,ꢀISD<=1.4A,ꢀTj=25°C
A/µs VDS=0ꢀtoꢀ400V,ꢀISD<=1.4A,ꢀTj=25°C
Maximum diode commutation speed3) dif/dt
50
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
2.4
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
62
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6 mm (0.063 in.) from case for 10s
1) Limited by Tj max. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3)ꢀVDClink=400V;ꢀVDS,peak<V(BR)DSS;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG;ꢀꢀtcond<2µs
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2018-02-08
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPP80R750P7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
800
2.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
V
V
VGS=0V,ꢀID=1mA
3
3.5
VDS=VGS,ꢀID=0.14mA
-
-
-
10
1
-
VDS=800V,ꢀVGS=0V,ꢀTj=25°C
VDS=800V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
IDSS
µA
Gate-source leakage curent incl. zener
diode
IGSS
RDS(on)
RG
-
-
1
µA
VGS=20V,ꢀVDS=0V
-
-
0.64
1.66
0.75
-
VGS=10V,ꢀID=2.7A,ꢀTj=25°C
VGS=10V,ꢀID=2.7A,ꢀTj=150°C
Drain-source on-state resistance
Gate resistance
Ω
Ω
-
1
-
f=250kHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
460
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=500V,ꢀf=250kHz
VGS=0V,ꢀVDS=500V,ꢀf=250kHz
Coss
9
Effective output capacitance, energy
related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
13
164
8
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0ꢀtoꢀ500V
Effective output capacitance, time
related2)
ID=constant,ꢀVGS=0V,ꢀVDS=0ꢀtoꢀ500V
VDD=400V,ꢀVGS=13V,ꢀID=2.7A,
RG=12Ω
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=2.7A,
RG=12Ω
8
VDD=400V,ꢀVGS=13V,ꢀID=2.7A,
RG=12Ω
Turn-off delay time
Fall time
td(off)
tf
40
20
VDD=400V,ꢀVGS=13V,ꢀID=2.7A,
RG=12Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
2
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=640V,ꢀID=2.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=640V,ꢀID=2.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=640V,ꢀID=2.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=640V,ꢀID=2.7A,ꢀVGS=0ꢀtoꢀ10V
Qgd
7
Qg
17
Gate plateau voltage
Vplateau
4.5
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ500V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ500V
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2018-02-08
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPP80R750P7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
VSD
trr
-
-
-
-
-
-
-
-
V
VGS=0V,ꢀIF=2.7A,ꢀTf=25°C
Reverse recovery time
630
5.2
ns
µC
A
VR=400V,ꢀIF=1.4A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=1.4A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=1.4A,ꢀdiF/dt=50A/µs
Reverse recovery charge
Peak reverse recovery current
Qrr
Irrm
13
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2018-02-08
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPP80R750P7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
60
102
100 µs
1 ms
10 µs
1 µs
50
40
30
20
10
0
101
100
10 ms
DC
10-1
10-2
10-3
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
10 µs
100 µs
101
1 µs
1 ms
10 ms
DC
100
0.5
100
0.2
10-1
10-2
10-3
0.1
0.05
0.02
0.01
single pulse
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2018-02-08
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPP80R750P7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
20
15
10 V
20 V
8 V 7 V
20 V
10 V
8 V
7 V
6 V
6 V
15
10
5
10
5.5 V
5 V
5.5 V
5 V
5
4.5 V
4.5 V
0
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
3.0
2.0
5 V
5.5 V
6.5 V
7 V
6 V
10 V
1.8
1.6
1.4
1.2
1.0
2.5
2.0
1.5
1.0
0.5
98%
0.8
0.6
0.4
0.2
typ
0
5
10
15
20
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=2.7ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2018-02-08
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPP80R750P7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
20
10
18
9
8
7
25 °C
16
14
12
6
120 V
640 V
10
5
4
3
2
1
0
150 °C
8
6
4
2
0
0
2
4
6
8
10
12
0
5
10
15
20
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=2.7ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
18
25 °C
125 °C
16
14
12
10
8
101
100
6
4
2
10-1
0
0.0
0.5
1.0
1.5
2.0
2.5
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=1.1ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2018-02-08
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPP80R750P7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
950
104
900
850
800
750
700
103
Ciss
102
Coss
101
Crss
100
10-1
-75 -50 -25
0
25
50
75 100 125 150 175
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
100
200
300
400
500
600
700
800
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2018-02-08
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPP80R750P7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2018-02-08
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPP80R750P7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
j
m
m
c
j
m
m
MILLIMETERS
DIM
INCHES
MIN
4.30
1.17
2.15
0.65
0.95
0.95
0.65
0.33
14.81
8.51
12.19
9.70
6.50
MAX
4.57
1.40
2.72
0.86
1.40
1.15
1.15
0.60
15.95
9.45
13.10
10.36
8.60
MIN
MAX
DOCUMENT NO.
Z8B00003318
A
A1
A2
b
0.169
0.046
0.085
0.026
0.037
0.037
0.026
0.013
0.583
0.335
0.480
0.382
0.256
0.180
0.055
0.107
0.034
0.055
0.045
0.045
0.024
0.628
0.372
0.516
0.408
0.339
0
SCALE
b1
b2
b3
c
2.5
0
2.5
5mm
D
D1
D2
E
EUROPEAN PROJECTION
E1
e
2.54
5.08
3
0.100
0.200
3
e1
N
ISSUE DATE
H1
L
5.90
13.00
-
6.90
14.00
4.80
3.89
3.00
0.232
0.512
-
0.272
0.551
0.189
0.153
0.118
30-07-2009
REVISION
L1
¡3
Q
06
3.60
2.60
0.142
0.102
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2018-02-08
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPP80R750P7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀWebpage:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2018-02-08
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPP80R750P7
RevisionꢀHistory
IPP80R750P7
Revision:ꢀ2018-02-08,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
Corrected front page text
2017-06-07
2018-02-08
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
WeꢀListenꢀtoꢀYourꢀComments
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failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2018-02-08
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