IPQC60R010S7 [INFINEON]
The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device.;
| 型号： | IPQC60R010S7 |
| 厂家： | 
Infineon |
| 描述： | The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device. |
| 文件： | 总14页 (文件大小：1370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPQC60R010S7
MOSFET
PG-HDSOP-22
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
22
IPQC60R010S7ꢀenablesꢀtheꢀbestꢀpriceꢀperformanceꢀforꢀlowꢀfrequency
switchingꢀapplications.ꢀCoolMOS™ꢀS7ꢀboastsꢀtheꢀlowestꢀRDS(on)ꢀvaluesꢀfor
aꢀHVꢀSJꢀMOSFET,ꢀwithꢀdistinctiveꢀincreaseꢀofꢀenergyꢀefficiency.
12
TAB
CoolMOS™ꢀS7ꢀisꢀoptimizedꢀforꢀ“staticꢀswitching”ꢀandꢀhighꢀcurrent
applications.ꢀItꢀisꢀanꢀidealꢀfitꢀforꢀsolidꢀstateꢀrelayꢀandꢀcircuitꢀbreakerꢀdesigns
asꢀwellꢀasꢀforꢀlineꢀrectificationꢀinꢀSMPSꢀandꢀinverterꢀtopologies.
1
11
Features
•ꢀCoolMOS™ꢀS7ꢀtechnologyꢀenablesꢀ10mΩꢀRDS(on)ꢀinꢀtheꢀsmallestꢀfootprint
•ꢀOptimizedꢀpriceꢀperformanceꢀinꢀlowꢀfrequencyꢀswitchingꢀapplications
•ꢀHighꢀpulseꢀcurrentꢀcapability
Drain
Pin 12-22, Tab
•ꢀKelvinꢀSourceꢀpinꢀimprovesꢀswitchingꢀperformanceꢀatꢀhighꢀcurrent
•ꢀQDPAKꢀbottomꢀsideꢀcoolingꢀpackageꢀisꢀMSL1ꢀcompliant,ꢀtotalꢀPb-free
andꢀsuitableꢀforꢀstandardꢀPCBꢀassemblingꢀflow,ꢀenablingꢀsimpleꢀsystem
integration
*1
Gate
Pin 1
Driver
Source
Pin 2
Power
Source
Pin 3-11
Benefits
*1: Internal body diode
•ꢀMinimizedꢀconductionꢀlossesꢀ(eliminateꢀ/ꢀreduceꢀheatꢀsink)
•ꢀIncreasedꢀsystemꢀperformance
•ꢀMoreꢀcompactꢀandꢀeasierꢀdesign
•ꢀLowerꢀBOMꢀor/andꢀTCOꢀoverꢀprolongedꢀlifeꢀtime
Comparedꢀtoꢀelectromechanicalꢀdevices:
•ꢀFasterꢀswitchingꢀtimes
•ꢀHigherꢀreliabilityꢀandꢀlongerꢀsystemꢀlifeꢀtime
•ꢀShockꢀ&ꢀvibrationꢀresistance
•ꢀNoꢀcontactꢀarcing,ꢀbouncingꢀorꢀdegradationꢀoverꢀlifeꢀtime
Potentialꢀapplications
•ꢀSolidꢀstateꢀrelaysꢀandꢀcircuitꢀbreakers
•ꢀLineꢀrectificationꢀinꢀhighꢀpower/performanceꢀapplicationsꢀe.g.ꢀComputing,
Telecom,ꢀUPSꢀandꢀSolar
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.
Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.ꢀForꢀparallelingꢀ4pinꢀMOSFET
devicesꢀtheꢀplacementꢀofꢀtheꢀgateꢀresistorꢀisꢀgenerallyꢀrecommendedꢀtoꢀbe
onꢀtheꢀDriverꢀSourceꢀinsteadꢀofꢀtheꢀGate.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
RDS(on),max
Qg,typ
Value
Unit
mΩ
nC
V
10
318
0.82
801
VSD
Pulsed ISD, IDS
A
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPQC60R010S7
PG-HDSOP-22
60R010S7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2022-11-23
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPQC60R010S7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2022-11-23
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPQC60R010S7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
TC=140°C
Current is limited by Tj max = 150°C;
Lower case temp does increase
Drain current rating
ID
-
-
50
A
current capability
Pulsed drain current1)
ID,pulse
EAS
IAS
-
-
-
-
-
-
-
-
-
-
-
801
616
6.3
20
A
TC=25°C
Avalanche energy, single pulse
Avalanche current, single pulse
MOSFET dv/dt ruggedness2)
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
mJ
A
ID=6.3A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
V/ns VDS=ꢀ0Vꢀtoꢀ300V
-20
-30
-
20
V
static
30
V
AC (f>1 Hz)
694
150
150
n.a.
W
°C
°C
TC=25°C
Storage temperature
-55
-55
-
-
-
Operating junction temperature
Mounting torque
-
Ncm -
TC=140°C
Current is limited by Tj max = 150°C;
Lower case temp does increase
current capability
Diode forward current rating
IS
-
-
50
A
Diode pulse current1)
Reverse diode dv/dt3)
IS,pulse
-
-
-
-
801
5
A
TC=25°C
VDS=0ꢀtoꢀ300V,ꢀISD<=50A,ꢀTj=25°Cꢀꢀꢀ
dv/dt
V/ns
see table 8
VDS=0ꢀtoꢀ300V,ꢀISD<=50A,ꢀTj=25°Cꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
dif/dt
-
-
-
-
1000 A/µs
n.a.
see table 8
VISO
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Pulse width tp limited by Tj,max
2) The dv/dt has to be limited by appropriate gate resistor
3) Identical low side and high side switch
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2022-11-23
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPQC60R010S7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.18
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
°C/W layer, 70µm thickness) copper area.
Tap exposed to air. PCB is vertical
without air stream cooling.
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
45
-
55
Soldering temperature, reflow soldering
allowed
Tsold
260
°C
reflow MSL1
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2022-11-23
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPQC60R010S7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
For applications with applied blocking voltage >70% of the specified blocking voltage, it is required that the customer
evaluates the impact of cosmic radiation effect in early design phase and contacts the Infineon sales office for the
necessary technical support by Infineon
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3.5
Typ.
-
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
V
V
VGS=0V,ꢀID=1mA
4.0
4.5
VDS=VGS,ꢀID=3.08mA
-
-
-
80
8
-
VDS=600V,ꢀVGS=0V,ꢀTj=25°C
VDS=600V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.009 0.010
0.022
VGS=12V,ꢀID=50A,ꢀTj=25°C
VGS=12V,ꢀID=50A,ꢀTj=150°C
RDS(on)
RG
-
-
0.45
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
11986 -
pF
pF
VGS=0V,ꢀVDS=300V,ꢀf=250kHz
VGS=0V,ꢀVDS=300V,ꢀf=250kHz
Coss
187
644
-
-
Effective output capacitance, energy
related1)
Co(er)
-
pF
VGS=0V,ꢀVDS=0ꢀtoꢀ300V
Effective output capacitance, time
related2)
Co(tr)
Qoss
td(on)
-
-
-
5716
1714
50
-
-
-
pF
nC
ns
ID=constant,ꢀVGS=0V,ꢀVDS=0ꢀtoꢀ300V
VGS=0V,ꢀVDS=0ꢀtoꢀ300V
Output charge
VDD=300V,ꢀVGS=13V,ꢀID=50A,
RG=3Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
VDD=300V,ꢀVGS=13V,ꢀID=50A,
RG=3Ω;ꢀseeꢀtableꢀ9
Rise time
tr
-
-
-
5
-
-
-
ns
ns
ns
VDD=300V,ꢀVGS=13V,ꢀID=50A,
RG=3Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
180
9
VDD=300V,ꢀVGS=13V,ꢀID=50A,
RG=3Ω;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
65
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=300V,ꢀID=50A,ꢀVGS=0ꢀtoꢀ12V
VDD=300V,ꢀID=50A,ꢀVGS=0ꢀtoꢀ12V
VDD=300V,ꢀID=50A,ꢀVGS=0ꢀtoꢀ12V
VDD=300V,ꢀID=50A,ꢀVGS=0ꢀtoꢀ12V
Qgd
106
Qg
318
Gate plateau voltage
Vplateau
5.4
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2022-11-23
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPQC60R010S7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
0.82
-
V
VGS=0V,ꢀIF=50A,ꢀTj=25°C
VR=300V,ꢀIF=50A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
600
17
-
-
-
ns
VR=300V,ꢀIF=50A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=300V,ꢀIF=50A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
55
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2022-11-23
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPQC60R010S7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
700
103
1 µs
600
500
400
300
200
100
0
102
101
10 µs
100 µs
100
1 ms
10 ms
DC
10-1
10-2
10-3
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
1 µs
102
101
10 µs
10-1
0.5
100 µs
0.2
100
0.1
0.05
1 ms
0.02
10-1
10-2
10-3
10-2
10 ms
0.01
single pulse
DC
10-3
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2022-11-23
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPQC60R010S7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
1200
800
20 V
20 V
12 V
1000
12 V
10 V
600
10 V
800
8 V
8 V
600
400
200
0
400
200
0
0
4
8
12
16
20
0
4
8
12
16
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.030
2.5
8 V
0.027
2.0
1.5
1.0
0.5
10 V
0.024
12 V
0.021
20 V
0.018
0
100
200
300
400
500
600
700
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=50ꢀA;ꢀVGS=12ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2022-11-23
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPQC60R010S7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
1200
12
25 °C
1000
800
10
8
300 V
120 V
150 °C
600
6
400
200
0
4
2
0
0
2
4
6
8
10
12
0
50
100
150
200
250
300
350
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=50ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
103
103
102
102
25 °C
25 °C
125 °C
101
101
125 °C
100
100
10-1
10-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSDꢀ[V]
VSDꢀ[V]
IF=f(VSD);ꢀVGS=0ꢀV;ꢀparameter:ꢀTj
IF=f(VSD);ꢀVGS=12ꢀV;ꢀparameter:ꢀTj
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2022-11-23
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPQC60R010S7
Diagramꢀ13:ꢀAvalancheꢀenergy
Diagramꢀ14:ꢀDrain-sourceꢀbreakdownꢀvoltage
700
680
600
500
400
300
200
100
0
660
640
620
600
580
560
540
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tjꢀ[°C]
Tjꢀ[°C]
EAS=f(Tj);ꢀID=6.3ꢀA;ꢀVDD=50ꢀV
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Diagramꢀ15:ꢀTyp.ꢀcapacitances
Diagramꢀ17:ꢀTyp.ꢀQossꢀoutputꢀcharge
106
1800
1500
1200
900
600
300
0
105
Ciss
104
103
Coss
102
Crss
101
0
50
100
150
200
250
300
0
50
100
150
200
250
300
VDSꢀ[V]
VDSꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Qoss=f(VDS);ꢀVGS=0ꢀV
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2022-11-23
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPQC60R010S7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(ss)
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2022-11-23
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPQC60R010S7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-HDSOP-22-U02
MILLIMETERS
DIMENSIONS
MIN.
2.20
0.00
MAX.
2.35
0.15
A
A1
A2
b
0.5
0.50
0.50
0.70
0.90
b1
c
0.46
0.58
D
15.30
10.23
14.90
11.91
15.50
10.43
15.10
12.11
D1
E
E1
e
1.14
22
N
H
20.81
1.20
21.11
1.40
L
O
5°
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HDSOP-22,ꢀdimensionsꢀinꢀmm
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2022-11-23
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPQC60R010S7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀS7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀS7ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀS7ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2022-11-23
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPQC60R010S7
RevisionꢀHistory
IPQC60R010S7
Revision:ꢀ2022-11-23,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2022-11-23
Trademarks
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
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failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2022-11-23
相关型号：
IPQC60R010S7A
The automotive qualified AEC-Q101, 600 V CoolMOS™ S7A SJ MOSFET family is optimized to offer low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for HV solid state power distribution applications (HV eFuse, Solid State Circuit breaker) and active line rectification. The QDPAK-BSC package provides the intrinsic superior thermal and overload capabilities while enabling customers to utilize standardized SMD cooling and mounting techniques.
INFINEON
IPQC60R017S7
The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device.
INFINEON
IPQC60R017S7A
The automotive qualified AEC-Q101, 600 V CoolMOS™ S7A SJ MOSFET family is optimized to offer low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for HV solid state power distribution applications (HV eFuse, Solid State Circuit breaker) and active line rectification. The QDPAK-BSC package provides the intrinsic superior thermal and overload capabilities while enabling customers to utilize standardized SMD cooling and mounting techniques.
INFINEON
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