IPS022G [INFINEON]
DUAL FULLY PROTECTED POWER MOSFET SWITCH; DUAL充分保护功率MOSFET开关
| 型号： | IPS022G |
| 厂家： | 
Infineon |
| 描述： | DUAL FULLY PROTECTED POWER MOSFET SWITCH |
| 文件： | 总10页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No.PD60203
IPS022G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection
Product Summary
R
V
150mΩ (max)
ds(on)
50V
5A
clamp
I
shutdown
Description
T T
1.5µs
on/ off
The IPS022G are fully protected dual low side SMART
POWER MOSFETs respectively. They feature over-
current, over-temperature, ESD protection and drain
to source active clamp.These devices combine a
Package
®
HEXFET POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning
OFF the power MOSFET when the temperature ex-
ceeds 165oC or when the drain current reaches 5A.
These devices restart once the input is cycled. The
avalanche capability is significantly enhanced by
the active clamp and covers most inductive load
demagnetizations.
8-Lead SOIC
IPS022G
(Dual)
Typical Connection
Load
R in series
(if needed)
D
S
IN
control
Logic signal
(Refer to lead assignment for correct pin configuration)
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1
IPS022G
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (T
print with 70 µm copper thickness.
= 25oC unless otherwise specified). PCB mounting uses the standard foot-
Ambient
Symbol Parameter
Min.
—
Max.
47
Units
V
Test Conditions
V
Maximum drain to source voltage
ds
V
Maximum input voltage
-0.3
-10
7
in
I
I
Maximum IN current
+10
mA
in, max
sd cont.
(1)
Diode max. continuous current
∑
(
lsd mosfets, rth=125oC/W)
(1)
—
—
1.4
10
A
I
Diode max. pulsed current
(for ea. mosfet)
(1)
sd pulsed
P
d
Maximum power dissipation
Pd mosfets, rth=125oC/W)
—
—
1
4
W
∑
(
ESD1
ESD2
Electrostatic discharge voltage (Human Body)
Electrostatic discharge voltage (Machine Model)
Max. storage temperature
C=100pF, R=1500Ω,
kV
—
0.5
150
+150
C=200pF, R=0Ω, L=10µH
T
T
-55
-40
stor.
oC
max. Max. junction temperature
j
Thermal Characteristics
Symbol Parameter
Min. Typ. Max. Units Test Conditions
R
Thermal resistance with standard footprint
(2 mosfets on)
th1
—
—
—
—
—
—
(2 mos on)
100
127
60
oC/W
R
Thermal resistance
th2
with standard footprint
(1 mos on)
(1 mosfet on)
Thermal resistance with 1" square footprint
(2 mosfets on)
R
th3
(2 mos on)
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
2
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IPS022G
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min. Max. Units
V
V
V
Continuous drain to source voltage
High level input voltage
Low level input voltage
35
6
—
4
ds (max)
IH
V
0
0.5
IL
I
Continuous drain current
ds
o
o
o
(
TAmbient = 85 C, IN = 5V, rth = 100 C/W, Tj = 85 C)
Recommended resistor in series with IN pin
—
0.5
1
5
1
1
A
R
k
in
Ω
µ
S
T
Max recommended rise time for IN signal (see fig. 2)
Max. frequency in short circuit condition (Vcc = 14V)
—
0
r-in (max)
(2)
F -I
r sc
kHz
Static Electrical Characteristics
Standard footprint 70 µm copper thickness. (T = 25oC unless otherwise specified.)
j
Symbol Parameter
Min. Typ. Max. Units Test Conditions
ON state resistance
T
T
= 25oC
= 150oC
100
—
0
130
220
0.01
0.1
150
280
25
R
ds(on)
j
j
mΩ
µA
V
V
= 5V, I = 1A
ds
in
T
T
= 25oC
= 25oC
I
I
Drain to source leakage current
Drain to source leakage current
Drain to source clamp voltage 1
= 14V,
dss 1
cc
cc
j
j
0
50
V
I
= 40V,
dss 2
V clamp 1
56
= 20mA (see Fig.3 & 4)
48
50
54
56
8
1.5
90
130
d
I =I
d
(see Fig.3 & 4)
V clamp 2 Drain to source clamp voltage 2
shutdown
= 1 mA
60
9.5
2
V
I
in
I
d
V
V
clamp IN to source clamp voltage
IN threshold voltage
7
1
in
th
= 50mA, V = 14V
ds
,
25
50
I
I
ON state IN positive current
OFF state IN positive current
200
250
V
V
= 5V
in -on
in
µA
= 5V
in, -off
in
over-current triggered
Switching Electrical Characteristics
V
= 14V, Resistive Load = 10Ω, Rinput = 50Ω, 100µs pulse, Tj = 25oC, (unless otherwise specified).
cc
Symbol Parameter
Min. Typ. Max. Units Test Conditions
T
T
T
Turn-on delay time
Rise time
0.5
0.9
6
0.15
0.4
2
1
2
on
r
rf
See figure 2
Time to 130% final R
Turn-off delay time
Fall time
12
3.5
2.5
—
ds(on)
µs
T
2
1.3
3.3
0.8
0.5
—
off
See figure 2
T
f
in
Q
Total gate charge
nC
V
in
= 5V
(2) Operations at higher switching frequencies is possible. See Appl. notes.
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3
IPS022G
Protection Characteristics
Symbol Parameter
Min. Typ. Max. Units Test Conditions
T
Over temperature threshold
Over current threshold
IN protection reset threshold
Time to reset protection
—
165
5.5
2.3
10
—
oC
A
See fig. 1
sd
I
4
7
See fig. 1
sd
V
1.5
2
3
V
µs
µJ
reset
T
reset
V
V
= 0V, Tj = 25oC
in
40
—
EOI_OT Short circuit energy (see application note)
400
= 14V
—
cc
Functional Block Diagram
All values are typical
DRAIN
47 V
Ω
200 k
Ω
1000
IN
S
Q
Q
8.1 V
R
I sense
T > 165°c
I > Isd
µ
80 A
SOURCE
Lead Assignments
D1 D1 D2 D2
1
S1 In1 S2 In2
8 Lead SOIC
(Dual)
IPS022G
Part Number
4
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IPS022G
5 V
0 V
Vin
1900 %%
t > T reset
t < T reset
Tr-in
Ids
I shutdown
Isd
90 %
10 %
Td on
Td off
tr
tf
T
T shutdown
Tsd
(165 °c)
Vds
Figure 2 - IN rise time & switching time definitions
Figure 1 - Timing diagram
T clamp
Vin
L
V load
Rem : V load is negative
during demagnetization
+
14 V
-
R
D
S
Ids
Vin
Vds clamp
IN
Vds
5 v
0 v
( Vcc )
Vds
(
see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
Figure 4 - Active clamp test circuit
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5
IPS022G
All curves are typical values with standard footprints. Operating in the shaded area is not recommended.
300
250
200
150
100
50
200%
180%
160%
140%
120%
100%
80%
Tj = 150oC
Tj = 25oC
60%
40%
20%
0%
0
-50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
Figure 5 - Rds ON (mΩ) Vs Input Voltage (V)
Figure 6 - Normalized Rds(on) (%) Vs Tj (oC)
10
4
3
2
1
0
ton delay
rise time
130% rdson
toff delay
fall time
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
Figure 7 - Turn-ON Delay Time, Rise Time & Time
Figure 8 - Turn-OFF Delay Time & Fall Time (us)
Vs Input Voltage (V)
to 130% final Rds
(us) Vs Input Voltage (V)
(on)
6
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IPS022G
1 0 0
1 0
1
1 0 0
1 0
1
delay on
rise time
130% rdson
delay off
fall time
0 .1
0 .1
10
100
1000
10000
1 0
1 0 0
1 0 0 0
1 0 0 0 0
Figure 9 - Turn-ON Delay Time, Rise Time & Time to
Figure 10 - Turn-OFF Delay Time & Fall Time (us)
Vs IN Resistor (Ω)
130% final Rds(on) (us) Vs IN Resistor (Ω)
8
6
4
6
5
4
3
2
1
0
2
Isd 25°C
Ilim 25°C
0
0
1
2
3
4
5
6
7
8
-50 -25
0
25 50 75 100 125 150
Figure 11 - Current Iim. & I shutdown (A)
Vs Vin (V)
Figure 12 - I shutdown (A) Vs Temperature (oC)
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7
IPS022G
100
10
1
5
4
3
2
1
0
Std. footprint 127°C/W
1 mosfet on
Std. footprint 100°C/W
T=25°C Std. footprint
T=100°C Std footprint
2 mosfets on
Current path capability should
be above this curve
Load characteristic should
be below this curve
-50
0
50
100
150
200
Figure 13 - Max.Cont. Ids (A)
Vs Amb. Temperature (oC)
Figure 14 - Ids (A) Vs Protection Resp. Time (s)
1 0 0
single pulse
10
100 Hz rth=100°C/W dT=25°C
1kHz rth=100°C/W dT=25°C
1 0
1
1
Single pulse
0 .1
0 .0 1
rth 1 mosfet active
rth 2 mosfets active
Vbat = 14 V
Tjini = T sd for single pulse
all curves for 1 mosfet active
0.1
0 .0 1
0 .1
1
1 0
1 0 0
Figure 15 - Iclamp (A) Vs Inductive Load (mH)
Figure 16 - Transient Thermal Imped. (oC/W)
Vs Time (s)
8
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IPS022G
16
14
12
10
8
200
180
160
140
120
100
80
Treset
rise time
fall time
6
60
4
Iin,on
Iin,off
40
2
20
0
0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
Figure 18 - Rise Time, Fall Time and Treset (µs)
Figure 17 - Input Current (uA) Vs
Junction Temperature (oC)
Vs Tj (oC)
120%
115%
110%
105%
100%
95%
90%
Vds clamp @ Isd
85%
Vin clamp @ 10mA
80%
-50 -25
0
25 50 75 100 125 150
Figure 19 -Vin clamp and Vds clamp2 (%) Vs
Tj (oC)
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IPS022G
Case Outline
INCHES
MIL L IME T E R S
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
FOOTPRINT
8X 0.72 [.028]
5
A
A1 .0040
b
c
.013
.0075
.189
.0098
.1968
.1574
8
1
7
2
6
3
5
6
D
E
e
H
E
.1497
0.25 [.010]
A
.050 BASIC
1.27 BASIC
6.46 [.255]
4
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
3X 1.27 [.050]
e
6X
8X 1.78 [.070]
K x 45°
e1
A
C
y
0.10 [.004]
8X c
8X L
A1
B
8X b
7
0.25 [.010]
C A
NOTES:
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF ORMS T O JE DE C OU T L INE MS -012AA.
DIMENSION IS T HE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
01-6027
01-0021 11 (MS-012AA)
8-Lead SOIC
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 10/16/2002
10
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相关型号：
IPS031N03LGHF
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INFINEON
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