概述
数据手册IPS65R400CE 概述
650V CoolMOSª CE Power Transistor
IPS65R400CE 数据手册
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PDF下载IPD65R400CE,ꢀIPS65R400CE
MOSFET
DPAK
IPAKꢀSL
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
tab
tab
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀseriesꢀcombinesꢀthe
experienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.
TheꢀresultingꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction
MOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuse.ꢀExtremelyꢀlowꢀswitchingꢀand
conductionꢀlossesꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmore
compact,ꢀlighterꢀandꢀcooler.
2
1
3
Drain
Pin 2, Tab
Gate
Pin 1
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀVeryꢀhighꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀuse/drive
Source
Pin 3
•ꢀJEDECꢀqualfied,ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications
Applications
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTVꢀandꢀindoorꢀLighting
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
ID.
Value
700
400
15.1
39
Unit
V
mΩ
A
Qg.typ
nC
A
ID,pulse
30
Eoss@400V
2.8
µJ
Typeꢀ/ꢀOrderingꢀCode
IPD65R400CE
Package
Marking
RelatedꢀLinks
PG-TO 252
PG-TO 251
65S400CE
see Appendix A
IPS65R400CE
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2016-02-23
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD65R400CE,ꢀIPS65R400CE
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2016-02-23
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD65R400CE,ꢀIPS65R400CE
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
15.1
9.5
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
-
-
-
-
-
-
-
-
30
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
-
215
0.32
1.8
50
mJ
mJ
A
ID=1.8A; VDD=50V; see table 10
EAR
-
ID=1.8A; VDD=50V; see table 10
-
IAR
-
dv/dt
VGS
VGS
-
V/ns VDS=0...480V
-20
-30
20
V
V
static;
30
AC (f>1 Hz)
Power dissipation (Non FullPAK)
TO-252, TO-251
Ptot
-
-
118
W
TC=25°C
Storage temperature
Tstg
Tj
-55
-55
-
-
-
-
-
150
150
10.6
30
°C
°C
A
-
Operating junction temperature
Continuous diode forward current
Diode pulse current2)
-
IS
TC=25°C
TC=25°C
IS,pulse
-
A
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Reverse diode dv/dt3)
dv/dt
dif/dt
-
-
-
-
15
V/ns
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Maximum diode commutation speed
500
A/µs
1) Limited by Tj max. Maximum duty cycle D=0.50
2) Pulse width tp limited by Tj,max
3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2016-02-23
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD65R400CE,ꢀIPS65R400CE
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
1.06
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
Tsold
-
-
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2016-02-23
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD65R400CE,ꢀIPS65R400CE
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
2.5
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
V
V
VGS=0V,ꢀID=1mA
3.0
3.5
VDS=VGS,ꢀID=0.32mA
-
-
-
10
1
-
VDS=650,ꢀVGS=0V,ꢀTj=25°C
VDS=650,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.36
0.94
0.40
-
VGS=10V,ꢀID=3.2435A,ꢀTj=25°C
VGS=10V,ꢀID=3.2435A,ꢀTj=150°C
RDS(on)
RG
-
7.5
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
710
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=100V,ꢀf=1MHz
VGS=0V,ꢀVDS=100V,ꢀf=1MHz
Coss
41
Effective output capacitance,
energy related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
32
140
10
7
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...480V
Effective output capacitance,
time related2)
ID=constant,ꢀVGS=0V,ꢀVDS=0...480V
VDD=400V,ꢀVGS=13V,ꢀID=4.86525A,
RG=4.9Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=4.86525A,
RG=4.9Ω;ꢀseeꢀtableꢀ9
VDD=400V,ꢀVGS=13V,ꢀID=4.86525A,
RG=4.9Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
57
8
VDD=400V,ꢀVGS=13ꢀV,ꢀID=4.86525A,
RG=4.9Ω;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
VDD=480V,ꢀID=4.86525A,ꢀVGS=0ꢀto
10V
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
4
-
nC
VDD=480V,ꢀID=4.86525A,ꢀVGS=0ꢀto
10V
Qgd
-
-
-
20
39
5.5
-
-
-
nC
VDD=480V,ꢀID=4.86525A,ꢀVGS=0ꢀto
10V
Qg
nC
VDD=480V,ꢀID=4.86525A,ꢀVGS=0ꢀto
10V
Gate plateau voltage
Vplateau
V
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ480V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ480V
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2016-02-23
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD65R400CE,ꢀIPS65R400CE
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=4.9A,ꢀTj=25°C
VR=400V,ꢀIF=4.9A,ꢀdiF/dt=100A/µs;
see table 19
-
-
-
280
2.8
17
-
-
-
ns
VR=400V,ꢀIF=4.9A,ꢀdiF/dt=100A/µs;
see table 19
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=4.9A,ꢀdiF/dt=100A/µs;
see table 19
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2016-02-23
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD65R400CE,ꢀIPS65R400CE
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipationꢀ(Non-FullPAK)
Diagramꢀ2:ꢀSafeꢀoperatingꢀareaꢀ(Non-FullPAK)
120
102
110
100
90
80
70
60
50
40
30
20
10
0
101
1 µs
10 µs
100 µs
1 ms
100
10-1
10-2
10-3
DC
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀareaꢀ(Non-FullPAK)
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(Non-FullPAK)
102
101
101
1 µs
10 µs
100
100 µs
0.5
100
10-1
10-2
10-3
1 ms
DC
0.2
0.1
0.05
10-1
0.02
0.01
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2016-02-23
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD65R400CE,ꢀIPS65R400CE
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
32
20
20 V
28
20 V
10 V
10 V
8 V
24
15
10
5
8 V
7 V
20
7 V
6 V
16
12
5.5 V
6 V
8
5 V
5.5 V
4.5 V
4
0
5 V
4.5 V
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
1.6
1.0
1.4
0.8
7 V
6.5 V
1.2
1.0
0.8
0.6
0.4
6 V
5.5 V
5 V
0.6
10 V
98%
typ
0.4
0.2
0
5
10
15
20
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=3.2A;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2016-02-23
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD65R400CE,ꢀIPS65R400CE
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
35
10
9
8
7
6
5
4
3
2
1
0
30
25 °C
120 V
480 V
25
20
15
150 °C
10
5
0
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=4.9ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
250
25 °C
125 °C
200
150
100
50
101
100
10-1
0
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=1.8ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2016-02-23
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD65R400CE,ꢀIPS65R400CE
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
760
104
740
720
700
680
660
640
620
600
580
103
Ciss
102
Coss
101
Crss
100
-75 -50 -25
0
25
50
75 100 125 150 175
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
6
5
4
3
2
1
0
0
100
200
300
400
500
600
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2016-02-23
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD65R400CE,ꢀIPS65R400CE
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
VDS
Rg1
VDS(peak)
VDS
trr
VDS
IF
tF
tS
dIF / dt
Rg 2
IF
t
10%Irrm
Q
F
Q
S
IF
dI / dt
rr
trr =tF +tS
rr
Irrm
Q =QF +Q
S
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2016-02-23
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD65R400CE,ꢀIPS65R400CE
6ꢀꢀꢀꢀꢀPackageꢀOutlines
*) mold flash not included
MILLIMETERS
DIM
INCHES
MIN
2.16
0.00
0.64
0.65
5.00
0.46
0.46
5.97
5.02
6.40
4.70
MAX
2.41
0.15
0.89
1.15
5.50
0.60
0.98
6.22
5.84
6.73
5.60
MIN
MAX
0.095
0.006
0.035
0.045
0.217
0.024
0.039
0.245
0.230
0.265
0.220
A
A1
b
0.085
0.000
0.025
0.026
0.197
0.018
0.018
0.235
0.198
0.252
0.185
b2
b3
c
DOCUMENT NO.
Z8B00003328
0
c2
D
SCALE
D1
E
2.0
0
2.0
E1
e
2.29 (BSC)
0.090 (BSC)
0.180 (BSC)
3
4mm
4.57 (BSC)
3
e1
N
EUROPEAN PROJECTION
H
9.40
1.18
0.90
0.51
10.48
0.370
0.046
0.035
0.020
0.413
L
1.70
1.25
1.00
0.067
0.049
0.039
L3
L4
F1
F2
F3
F4
F5
F6
0.417
0.252
0.087
0.228
0.227
0.047
10.60
6.40
2.20
5.80
5.76
1.20
ISSUE DATE
01-09-2015
REVISION
05
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ252,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2016-02-23
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD65R400CE,ꢀIPS65R400CE
DOCUMENT NO.
Z8B00003329
MILLIMETERS
DIM
INCHES
0
MIN
2.18
0.80
0.64
0.65
4.95
0.46
0.46
5.97
5.04
6.35
4.60
MAX
2.40
1.14
0.89
1.15
5.50
0.59
0.89
6.22
5.55
6.73
5.21
MIN
MAX
0.094
0.045
0.035
0.045
0.217
0.023
0.035
0.245
0.219
0.265
0.205
SCALE
A
A1
b
0.086
0.031
0.025
0.026
0.195
0.018
0.018
0.235
0.198
0.250
0.181
2.0
0
2.0
b2
b4
c
4mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29
4.57
3
0.090
0.180
3
e1
N
ISSUE DATE
21-10-2015
L
3.00
0.80
0.88
3.60
1.25
1.28
0.118
0.031
0.035
0.142
0.049
0.050
REVISION
L1
L2
06
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ251,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2016-02-23
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD65R400CE,ꢀIPS65R400CE
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSTMꢀCEꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀCEꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀCEꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2016-02-23
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD65R400CE,ꢀIPS65R400CE
RevisionꢀHistory
IPD65R400CE, IPS65R400CE
Revision:ꢀ2016-02-23,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2016-02-23
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
WeꢀListenꢀtoꢀYourꢀComments
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©ꢀ2015ꢀInfineonꢀTechnologiesꢀAG
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respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
15
Rev.ꢀ2.0,ꢀꢀ2016-02-23
IPS65R400CE 相关器件
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| IPS65R600E6 | INFINEON | Metal Oxide Semiconductor Field Effect Transistor | 获取价格 |
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| IPS7081PBF | INFINEON | INTELLIGENT POWER HIGH SIDE SWITCH | 获取价格 |
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| IPS7081R | INFINEON | INTELLIGENT POWER HIGH SIDE SWITCH | 获取价格 |
|
| IPS7081RPBF | INFINEON | INTELLIGENT POWER HIGH SIDE SWITCH | 获取价格 |
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| IPS7081RS | INFINEON | INTELLIGENT POWER HIGH SIDE SWITCH | 获取价格 |
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| IPS7081RSPBF | INFINEON | INTELLIGENT POWER HIGH SIDE SWITCH | 获取价格 |
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