IPSH6N03LB [INFINEON]
OptiMOS㈢2 Power-Transistor; OptiMOS®2功率三极管
| 型号： | IPSH6N03LB |
| 厂家： | 
Infineon |
| 描述： | OptiMOS㈢2 Power-Transistor |
| 文件： | 总10页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPUH6N03LB
Product Summary
IPSH6N03LB
OptiMOS®2 Power-Transistor
Package
V DS
30
6.3
50
V
Marking
R DS(on),max
I D
mΩ
A
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Type
IPUH6N03LB
IPSH6N03LB
Package
Marking
PG-TO251-3
H6N03LB
PG-TO251-3-11
H6N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
50
50
A
T C=100 °C
T C=25 °C3)
I D,pulse
Pulsed drain current
200
160
E AS
I D=50 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
T
j,max=175 °C
Gate source voltage4)
Power dissipation
V GS
±20
83
V
P tot
T C=25 °C
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1) J-STD20 and JESD22
Rev. 0.3
page 1
2006-05-15
IPUH6N03LB
Values
typ.
IPSH6N03LB
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
1.8
62
40
K/W
R thJA
minimal footprint
6 cm2 cooling area5)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
DS=V GS, I D=40 µA
Drain-source breakdown voltage
Gate threshold voltage
30
-
-
V
1.2
1.6
2
V
DS=30 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
T j=25 °C
V
DS=30 V, V GS=0 V,
100
T j=125 °C
I GSS
V
V
V
GS=20 V, V DS=0 V
GS=4.5 V, I D=30 A
GS=10 V, I D=50 A
Gate-source leakage current
-
-
10
100 nA
R DS(on)
7.4
9.3
mΩ
-
-
5.2
1.2
6.3
-
R G
g fs
Gate resistance
Ω
|V DS|>2|I D|R DS(on)max
I D=50 A
,
Transconductance
39
78
-
S
2) Current is limited by bondwire; with anR thJC=1.8 K/W the chip is able to carry 86 A.
3) See figure 3
4) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V
2
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 0.3
page 2
2006-05-15
IPUH6N03LB
Values
typ.
IPSH6N03LB
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
2100
750
97
2800 pF
1000
V
GS=0 V, V DS=15 V,
C oss
Crss
t d(on)
t r
f =1 MHz
150
7
10
8
ns
6
V
DD=15 V, V GS=10 V,
I D=25 A, R G=2.7 Ω
t d(off)
t f
Turn-off delay time
Fall time
25
37
6.0
4.0
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
6.5
3.3
4.2
7.4
16
8.7
4.5
6.4
11
22
-
nC
Q g(th)
Q gd
V
V
DD=15 V, I D=25 A,
GS=0 to 5 V
Q sw
Q g
Gate charge total
V plateau
Gate plateau voltage
3.1
V
V
V
DS=0.1 V,
Q g(sync)
Q oss
Gate charge total, sync. FET
Output charge
-
-
14
17
19
22
nC
GS=0 to 5 V
V
DD=15 V, V GS=0 V
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
50
A
T C=25 °C
I S,pulse
200
V
GS=0 V, I F=50 A,
V SD
Q rr
Diode forward voltage
-
-
0.93
-
1.2
10
V
T j=25 °C
V R=15 V, I F=I S,
di F/dt =400 A/µs
Reverse recovery charge
nC
6) See figure 16 for gate charge parameter definition
Rev. 0.3
page 3
2006-05-15
IPUH6N03LB
IPSH6N03LB
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
90
80
70
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
1000
10
1 µs
limited by on-state
resistance
0.5
10 µs
1
100
0.2
0.1
100 µs
DC
0.05
0.1
0.02
1 ms
single pulse
0.01
10
10 ms
0.01
1
0.001
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
0
t
p [s]
V
DS [V]
Rev. 0.3
page 4
2006-05-15
IPUH6N03LB
IPSH6N03LB
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R
DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
25
100
4.5 V
10 V
3.8 V
4.1 V
4.1 V
3.5 V
90
80
70
60
50
40
30
20
10
0
3.2 V
20
15
10
5
3 V
3.8 V
3.5 V
3.2 V
4.5 V
10 V
3 V
2.8 V
0
0
20
40
60
80
100
0
1
2
3
V
DS [V]
I
D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100
90
80
70
60
50
40
30
20
120
100
80
60
40
20
0
175 °C
25 °C
10
0
0
1
2
3
4
5
0
20
40
60
80
I
D [A]
V
GS [V]
Rev. 0.3
page 5
2006-05-15
IPUH6N03LB
IPSH6N03LB
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
12
11
10
9
2.5
2
1.5
1
8
400 µA
98 %
7
40 µA
6
typ
5
4
3
2
1
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. Capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
10000
1000
Ciss
25 °C
Coss
1000
100
10
100
10
175°C 98%
175 °C
Crss
25°C 98%
1
0
5
10
15
DS [V]
20
25
30
0.0
0.5
1.0
SD [V]
1.5
2.0
V
V
Rev. 0.3
page 6
2006-05-15
IPUH6N03LB
14 Typ. gate charge
GS=f(Q gate); I D=25 A pulsed
IPSH6N03LB
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
V
I
parameter: Tj(start)
parameter: V DD
100
12
15 V
20 V
10
8
25 °C
5 V
100 °C
150 °C
10
6
4
2
1
1
0
0
10
100
1000
10
20
gate [nC]
30
40
Q
t
AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
38
36
34
32
30
28
26
24
22
20
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 0.3
page 7
2006-05-15
IPUH6N03LB
IPSH6N03LB
PG-TO251-3: Outline
Rev. 0.3
page 8
2006-05-15
IPUH6N03LB
IPSH6N03LB
PG-TO251-3-11: Outline
Rev. 0.3
page 9
2006-05-15
IPUH6N03LB
IPSH6N03LB
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 0.3
page 10
2006-05-15
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