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IPT004N03L [INFINEON]

英飞凌的 To-无导线封装针对大电流应用进行优化，例如，叉车、轻型电动车 (LEV)、POL（负载点）和电信。这种封装是高功率应用的理想解决方案，这种场合需要高效率、出色的电磁干扰性能以及出色的热性能和节省的空间。;
IPT004N03L
型号： IPT004N03L
厂家： Infineon    Infineon
描述：

英飞凌的 To-无导线封装针对大电流应用进行优化，例如，叉车、轻型电动车 (LEV)、POL（负载点）和电信。这种封装是高功率应用的理想解决方案，这种场合需要高效率、出色的电磁干扰性能以及出色的热性能和节省的空间。

电信
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MOSFET  
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor  
OptiMOSTM  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
IPT004N03L  
DataꢀSheet  
Rev.ꢀ2.0  
Final  
PowerꢀManagementꢀ&ꢀMultimarket  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
IPT004N03L  
HSOF  
1ꢀꢀꢀꢀꢀDescription  
Features  
Tab  
•ꢀOptimizedꢀforꢀe-fuseꢀandꢀORingꢀapplication  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=4.5ꢀV  
•ꢀ100%ꢀavalancheꢀtested  
1
2
3
4
5
6
7
8
•ꢀSuperiorꢀthermalꢀresistance  
•ꢀN-channel  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications  
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Drain  
Tab  
Parameter  
Value  
Unit  
VDS  
30  
V
Gate  
Pin 1  
RDS(on),max  
ID  
0.4  
mΩ  
A
300  
141  
252  
Source  
Pin 2-8  
QOSS  
nC  
nC  
QG(0V..10V)  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
004N03L  
RelatedꢀLinks  
IPT004N03L  
PG-HSOF-8-1  
-
1) J-STD20 and JESD22  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2014-10-08  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
IPT004N03L  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2014-10-08  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
IPT004N03L  
2ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
at 25 °C  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Max.  
Min.  
-
-
-
-
-
-
-
-
-
-
300  
300  
300  
300  
72  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
VGS=4.5ꢀV,ꢀTC=25ꢀ°C  
Continuous drain current  
ID  
A
VGS=4.5ꢀV,ꢀTC=100ꢀ°C  
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=40ꢀK/W1)  
Pulsed drain current2)  
Avalanche energy, single pulse3)  
ID,pulse  
EAS  
-
-
-
-
1200  
830  
20  
A
TC=25ꢀ°C  
ID=150ꢀA  
-
-
mJ  
V
Gate source voltage  
VGS  
-20  
-
-
-
-
300  
3.8  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=40ꢀK/W1)  
IEC climatic category; DIN IEC 68-1:  
55/150/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
150  
°C  
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
Device on PCB  
RthJC  
RthJA  
-
0.5  
K/W  
K/W  
-
-
-
-
-
40  
62  
6 cm² cooling area1)  
minimum footprint  
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
2) See figure 3 for more detailed information  
3) See figure 13 for more detailed information  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2014-10-08  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
IPT004N03L  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Max.  
Min.  
30  
Typ.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
-
-
V
V
VGS=0ꢀV,ꢀID=10ꢀmA  
VDS=VGS,ꢀID=250ꢀµA  
0.7  
2.2  
-
-
0.1  
10  
10  
100  
VDS=30ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=30ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
0.44  
0.37  
0.5  
0.4  
VGS=4.5ꢀV,ꢀID=150ꢀA  
VGS=10ꢀV,ꢀID=150ꢀA  
RDS(on)  
mΩ  
Gate resistance  
RG  
gfs  
1.4  
2.7  
5.4  
-
Ω
-
Transconductance  
160  
320  
S
|VDS|>2|ID|RDS(on)max,ꢀID=30ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Ciss  
Coss  
Crss  
-
-
-
18000 24000 pF  
5400 7200 pF  
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz  
Output capacitance  
Reverse transfer capacitance  
590  
30  
-
-
pF  
ns  
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
17  
-
-
-
ns  
ns  
ns  
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
149  
37  
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ  
Values  
Typ.  
40  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
53  
-
Gate to source charge  
Gate charge at threshold  
Gate to drain charge  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
Qg(th)  
Qgd  
29  
28  
36  
-
Qsw  
38  
Gate charge total  
Qg  
122  
2.2  
163  
-
Gate plateau voltage  
Gate charge total  
Vplateau  
Qg  
252  
105  
141  
336  
-
nC  
nC  
nC  
Gate charge total, sync. FET  
Output charge  
Qg(sync)  
Qoss  
188  
VDD=15ꢀV,ꢀVGS=0ꢀV  
1) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2014-10-08  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
IPT004N03L  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Max.  
Min.  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
300  
A
TC=25ꢀ°C  
IS,pulse  
VSD  
Qrr  
-
1200  
A
TC=25ꢀ°C  
Diode forward voltage  
0.83  
100  
1
-
V
VGS=0ꢀV,ꢀIF=150ꢀA,ꢀTj=25ꢀ°C  
VR=15ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=400ꢀA/µs  
Reverse recovery charge  
nC  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2014-10-08  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
IPT004N03L  
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
350  
350  
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
0
0
0
40  
80  
120  
160  
200  
0
40  
80  
120  
160  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
104  
101  
1 µs  
103  
102  
10 µs  
100 µs  
100  
1 ms  
0.5  
10 ms  
10-1  
0.2  
DC  
0.1  
101  
0.05  
0.02  
10-2  
100  
0.01  
single pulse  
10-1  
10-3  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2014-10-08  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
IPT004N03L  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
1200  
10 V  
4.5 V  
0.6  
3.2 V  
4 V  
3.5 V  
5 V  
1000  
800  
600  
400  
200  
0
0.5  
3.2 V  
4 V  
4.5 V  
5 V  
3.5 V  
0.4  
7 V  
8 V  
10 V  
3 V  
0.3  
2.8 V  
0.2  
0.1  
0.0  
0
1
2
3
0
100  
200  
300  
400  
500  
600  
700  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
1200  
800  
700  
600  
500  
400  
300  
200  
100  
0
1000  
800  
600  
400  
175 °C  
25 °C  
200  
0
0
1
2
3
4
5
0
40  
80  
120  
160  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
gfs=f(ID);ꢀTj=25ꢀ°C  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2014-10-08  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
IPT004N03L  
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
1.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0.8  
0.6  
1 mA  
0.4  
typ  
0.2  
0.0  
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj);ꢀID=150ꢀA;ꢀVGS=10ꢀV  
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=1ꢀmA  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
105  
104  
103  
Ciss  
104  
103  
102  
Coss  
102  
25 °C  
175 °C  
101  
Crss  
100  
0
5
10  
15  
20  
25  
0.0  
0.5  
1.0  
1.5  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2014-10-08  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
IPT004N03L  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
103  
12  
10  
8
15 V  
24 V  
6 V  
102  
25 °C  
100 °C  
125 °C  
6
101  
4
2
100  
0
100  
101  
102  
103  
0
50  
100  
150  
200  
250  
300  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)  
VGS=f(Qgate);ꢀID=30ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Gate charge waveforms  
34  
32  
30  
28  
26  
24  
22  
20  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=10ꢀmA  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2014-10-08  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
IPT004N03L  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
1) partially covered with Mold Flash  
MILLIMETERS  
INCHES  
DIM  
MIN  
2.20  
0.70  
9.70  
0.42  
0.40  
MAX  
2.40  
0.90  
9.90  
0.50  
0.60  
10.58  
MIN  
MAX  
0.094  
0.035  
0.390  
0.020  
0.024  
0.416  
DOCUMENT NO.  
Z8B00169619  
A
b
0.087  
0.028  
0.382  
0.017  
0.016  
0.405  
b1  
b2  
c
0
SCALE  
D
10.28  
2
D2  
E
3.30  
0.130  
9.70  
10.10  
0.382  
0.398  
0
2
E1  
E4  
E5  
e
7.50  
8.50  
0.295  
0.335  
4mm  
9.46  
1.20 (BSC)  
0.372  
0.047 (BSC)  
EUROPEAN PROJECTION  
H
11.48  
6.55  
11.88  
6.75  
0.452  
0.258  
0.468  
0.266  
H1  
H2  
H3  
H4  
N
7.15  
3.59  
3.26  
8
0.281  
0.141  
0.128  
8
ISSUE DATE  
20-02-2014  
K1  
L
4.18  
0.165  
1.60  
1.00  
2.10  
1.30  
0.063  
0.039  
0.083  
0.051  
L1  
L2  
L4  
0.70  
0.60  
0.028  
0.024  
REVISION  
02  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HSOF-8-1  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2014-10-08  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
IPT004N03L  
RevisionꢀHistory  
IPT004N03L  
Revision:ꢀ2014-10-08,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
2.0  
Subjects (major changes since last revision)  
Release of final version  
2014-10-08  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2014ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith  
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication  
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout  
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
12  
Rev.ꢀ2.0,ꢀꢀ2014-10-08  

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