IPT017N12NM6 [INFINEON]
This is a normal level 120 V MOSFET in TO-Leadless packaging with 1.7 mOhm on-resistance. IPT017N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.;
| 型号： | IPT017N12NM6 |
| 厂家： | 
Infineon |
| 描述： | This is a normal level 120 V MOSFET in TO-Leadless packaging with 1.7 mOhm on-resistance. IPT017N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family. |
| 文件： | 总11页 (文件大小：957K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPT017N12NM6
MOSFET
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
TOLL
Features
Tab
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)
•ꢀHighꢀavalancheꢀenergyꢀrating
1
2
3
4
5
6
7
8
•ꢀ175°Cꢀoperatingꢀtemperature
•ꢀOptimizedꢀforꢀhighꢀfrequencyꢀswitching
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020
Drain
Tab
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Gate
Pin 1
Source
Pin 2-8
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
120
1.7
Unit
VDS
V
RDS(on),max
mΩ
A
ID
331
266
113
301
Qoss
nC
nC
nC
QG
Qrrꢀ(1000ꢀA/µs)
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
017N12N6
RelatedꢀLinks
IPT017N12NM6
PG-HSOF-8
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2022-12-06
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
IPT017N12NM6
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2022-12-06
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
IPT017N12NM6
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
331
234
212
29
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
Continuous drain current1)
ID
A
VGS=8ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,TA=25ꢀ°C,RTHJA=50ꢀ°C/W2)
Pulsed drain current3)
ID,pulse
IAS
-
-
-
-
-
1324
150
A
A
TA=25ꢀ°C
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
-
TC=25ꢀ°C
EAS
VGS
-
1328 mJ
ID=77ꢀA,ꢀRGS=25ꢀΩ
-20
20
V
-
-
-
-
-
395
3.0
TC=25ꢀ°C
Power dissipation
Ptot
W
°C
TA=25ꢀ°C,ꢀRTHJA=50ꢀ°C/W2)
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.38
°C/W -
°C/W -
Thermal resistance, junction - ambient,
6 cm² cooling area2)
-
-
50
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information.
4) See Diagram 13 for more detailed information.
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2022-12-06
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
IPT017N12NM6
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
120
2.6
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
3.1
3.6
VDS=VGS,ꢀID=275ꢀµA
-
-
0.1
10
1
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
1.46
1.65
1.7
2.06
VGS=10ꢀV,ꢀID=150ꢀA
VGS=8ꢀV,ꢀID=75ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
0.55
125
1.1
1.65
-
Ω
-
Transconductance
250
S
|VDS|≥2|ID|RDS(on)max,ꢀID=150ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
8100 11000 pF
2400 3100 pF
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
40
19
70
-
pF
ns
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=75ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=75ꢀA,
RG,ext=1.6ꢀΩ
17
34
19
-
-
-
ns
ns
ns
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=75ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=75ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
41
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
53
31
38
-
Gate to source charge1)
Gate charge at threshold1)
Gate to drain charge1)
Switching charge
Qgs
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=60ꢀV,ꢀID=75ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=60ꢀV,ꢀID=75ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=60ꢀV,ꢀID=75ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=60ꢀV,ꢀID=75ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=60ꢀV,ꢀID=75ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=60ꢀV,ꢀID=75ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=60ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
25
25
Qsw
40
Gate charge total1)
Qg
113
5.0
141
-
Gate plateau voltage
Output charge1)
Vplateau
Qoss
266
333
nC
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2022-12-06
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
IPT017N12NM6
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
331
1324
1.0
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.87
40
V
VGS=0ꢀV,ꢀIF=150ꢀA,ꢀTj=25ꢀ°C
VR=60ꢀV,ꢀIF=75ꢀA,ꢀdiF/dt=300ꢀA/µs
VR=60ꢀV,ꢀIF=75ꢀA,ꢀdiF/dt=300ꢀA/µs
VR=60ꢀV,ꢀIF=75ꢀA,ꢀdiF/dt=1000ꢀA/µs
VR=60ꢀV,ꢀIF=75ꢀA,ꢀdiF/dt=1000ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
Reverse recovery time1)
Reverse recovery charge1)
80
ns
nC
ns
nC
Qrr
trr
111
35
222
70
Qrr
301
602
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2022-12-06
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
IPT017N12NM6
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
400
350
350
300
250
200
150
100
50
300
250
200
150
100
50
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
104
101
single pulse
0.01
0.02
0.05
0.1
0.2
103
102
101
100
10-1
10-2
1 µs
10 µs
100
0.5
100 µs
10-1
10-2
10-3
1 ms
10 ms
DC
100
101
102
103
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2022-12-06
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
IPT017N12NM6
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
1400
5
10 V
1200
8 V
4
1000
5.5 V
800
6 V
7 V
3
2
1
600
7 V
400
8 V
6 V
10 V
200
5.5 V
5 V
0
0
1
2
3
4
5
0
100
200
300
400
500
600
700
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
1400
4.0
3.5
3.0
2.5
2.0
1.5
1200
1000
800
600
400
200
0
25 °C
175 °C
175 °C
100 °C
25 °C
1.0
0.5
0.0
-55 °C
0
2
4
6
8
10
4
6
8
10
12
14
16
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=150ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2022-12-06
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
IPT017N12NM6
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
4.0
3.5
3.0
2.5
2.0
1.6
1.2
0.8
0.4
2750 µA
275 µA
2.0
1.5
1.0
0.5
-75 -50 -25
0
25 50 75 100 125 150 175 200
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=150ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
105
104
25 °C
25 °C, max
175 °C
175 °C, max
104
103
102
101
Ciss
103
102
101
Coss
Crss
0
20
40
60
80
100
120
0.2
0.6
1.0
1.4
1.8
2.2
2.6
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2022-12-06
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
IPT017N12NM6
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
103
10
24 V
60 V
96 V
9
8
7
6
5
4
3
2
1
0
102
25 °C
100 °C
150 °C
101
100
100
101
102
103
0
20
40
60
80
100
120
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=75ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀMin.ꢀdrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
135
130
125
120
115
110
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2022-12-06
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
IPT017N12NM6
5ꢀꢀꢀꢀꢀPackageꢀOutlines
1) partially covered with Mold Flash
MILLIMETERS
INCHES
DIM
MIN
2.20
0.70
9.70
0.42
0.40
10.28
MAX
2.40
0.90
9.90
0.50
0.60
10.58
MIN
MAX
0.094
0.035
0.390
0.020
0.024
0.416
DOCUMENT NO.
Z8B00169619
A
b
0.087
0.028
0.382
0.017
0.016
0.405
b1
b2
c
0
SCALE
D
2
D2
E
3.30
0.130
9.70
10.10
0.382
0.398
0
2
E1
E4
E5
e
7.50
8.50
0.295
0.335
4mm
9.46
1.20 (BSC)
0.372
0.047 (BSC)
EUROPEAN PROJECTION
H
11.48
6.55
11.88
6.75
0.452
0.258
0.468
0.266
H1
H2
H3
H4
N
7.15
3.59
3.26
8
0.281
0.141
0.128
8
ISSUE DATE
20-02-2014
K1
L
4.18
0.165
1.60
1.00
2.10
1.30
0.063
0.039
0.083
0.051
L1
L2
L4
0.70
0.60
0.028
0.024
REVISION
02
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HSOF-8,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2022-12-06
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
IPT017N12NM6
RevisionꢀHistory
IPT017N12NM6
Revision:ꢀ2022-12-06,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2022-12-06
Trademarks
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(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2022-12-06
相关型号：
IPT019N08N5
Infineon’s OptiMOS™ 5 80V n-channel power MOSFET IPT019N08N5 in TO-Leadless package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. With a 60% space reduction compared to D2PAK 7pin package, TO-Leadless (TOLL) is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required.
INFINEON
IPT01A
MIL Series Connector, Aluminum Alloy, Female; Male, Crimp; Solder Terminal, Receptacle
GLENAIR
IPT01A18-11PCF2
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
GLENAIR
IPT01A18-11PCPH13.5F6
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
GLENAIR
IPT01A18-11PCPH13.5F8
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle
GLENAIR
IPT01A18-11PCPH16F8
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle
GLENAIR
IPT01A18-11PCPHM11F2
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
GLENAIR
IPT01A18-11PCPHM11F7
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
GLENAIR
IPT01A18-11PCPHM18F2
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
GLENAIR
IPT01A18-11PCSRF6
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
GLENAIR
IPT01A18-11PCSRF7
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
GLENAIR
IPT01A18-11PF2
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Solder Terminal, Receptacle, ROHS COMPLIANT
GLENAIR
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