IPTG111N20NM3FD [INFINEON]
OptiMOS™ 功率 MOSFET IPTG111N20NM3FD 采用改良的翼型引脚 TO-Leadless 封装。TOLG 封装尺寸与 TO-Leadless 封装尺寸互相兼容，与 D2PAK 7 引脚相比，TOLG 封装具有出色的电器性能，同时减少了约 60% 的电路板空间。这款 OptiMOS™ 3 - 200 V 的新型封装具有非常低的 RDS(on) ，而且经过优化，可处理大于 300 A 的高电流。;
| 型号： | IPTG111N20NM3FD |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ 功率 MOSFET IPTG111N20NM3FD 采用改良的翼型引脚 TO-Leadless 封装。TOLG 封装尺寸与 TO-Leadless 封装尺寸互相兼容，与 D2PAK 7 引脚相比，TOLG 封装具有出色的电器性能，同时减少了约 60% 的电路板空间。这款 OptiMOS™ 3 - 200 V 的新型封装具有非常低的 RDS(on) ，而且经过优化，可处理大于 300 A 的高电流。 |
| 文件： | 总11页 (文件大小：1352K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPTG111N20NM3FD
MOSFET
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
PG-HSOG-8-1
TAB
Features
TAB
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀFastꢀdiodeꢀ(FD)ꢀwithꢀreducedꢀQrr
•ꢀ175°Cꢀoperatingꢀtemperature
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
•ꢀOptimizedꢀforꢀhardꢀcommutationꢀruggedness
1
8
8
1
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Drain
TAB
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Gate
Pin 1
Parameter
Value
200
11.1
108
162
65
Unit
Source
Pin 2-8
VDS
V
RDS(on),max
ID
mΩ
A
Qoss
nC
nC
QG
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPTG111N20NM3FD
PG-HSOG-8-1
111N20NF
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2021-02-11
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
IPTG111N20NM3FD
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2021-02-11
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
IPTG111N20NM3FD
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
108
76
10.8
VGS=10ꢀV,ꢀTC=25ꢀ°C
Continuous drain current1)
ID
A
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,TA=25°C,RTHJA=40°C/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
432
375
20
A
TA=25ꢀ°C
-
mJ
V
ID=67ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
-
-
-
375
3.8
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRTHJA=40ꢀ°C/W2)
IEC climatic category; DIN IEC 68-1:
55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.4
K/W
K/W
-
-
Thermal resistance, junction - ambient,
6 cm² cooling area
-
-
-
-
40
62
Thermal resistance, junction - ambient,
minimal footprint2)
RthJA
K/W
-
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2021-02-11
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
IPTG111N20NM3FD
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
200
2
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
3
4
VDS=VGS,ꢀID=267ꢀµA
-
-
0.1
10
1
100
VDS=160ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=160ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
IDSS
µA
nA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance1)
IGSS
RDS(on)
RG
-
1
100
11.1
4.2
-
VGS=20ꢀV,ꢀVDS=0ꢀV
-
9.0
2.8
160
mΩ VGS=10ꢀV,ꢀID=96ꢀA
-
Ω
-
Transconductance
gfs
82
S
|VDS|≥2|ID|RDS(on)max,ꢀID=96ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
5300 7000 pF
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz
400
6
520
11
pF
pF
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=48ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
13
11
39
13
-
-
-
-
ns
ns
ns
ns
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=48ꢀA,
RG,ext=1.6ꢀΩ
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=48ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=48ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
25
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=100ꢀV,ꢀID=96ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=96ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=96ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=96ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=96ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=96ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=100ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
16
-
8.2
12.3
-
Qsw
17.4
65
Qg
81
-
Vplateau
Qoss
4.7
162
215
nC
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2021-02-11
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
IPTG111N20NM3FD
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
108
432
1.2
250
-
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.95
125
309
V
VGS=0ꢀV,ꢀIF=96ꢀA,ꢀTj=25ꢀ°C
VR=100ꢀV,ꢀIF=96ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=100ꢀV,ꢀIF=96ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
Qrr
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2021-02-11
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
IPTG111N20NM3FD
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
400
120
350
300
250
200
150
100
50
100
80
60
40
20
0
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
single pulse
0.01
1 µs
0.02
0.05
10 µs
102
101
0.1
0.2
0.5
100
100 µs
1 ms
10 ms
10-1
10-2
10-3
100
DC
10-1
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2021-02-11
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
IPTG111N20NM3FD
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
350
28
10 V
8 V
300
250
200
150
100
50
24
20
7 V
6 V
5 V
4.5 V
16
12
8
6 V
7 V
8 V
5 V
10 V
4.5 V
4
0
0
0
1
2
3
4
5
0
40
80
120
160
200
240
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
350
30
175 °C
25 °C
300
250
200
150
100
50
25
20
15
10
5
175 °C
25 °C
0
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=96ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2021-02-11
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
IPTG111N20NM3FD
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
3.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
2670 µA
267 µA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=96ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
Ciss
25 °C, max
175 °C
175 °C, max
103
102
101
100
Coss
102
101
Crss
100
0
25
50
75
100
125
150
175
200
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2021-02-11
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
IPTG111N20NM3FD
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
40 V
100 V
160 V
8
6
4
2
0
25 °C
101
100 °C
150 °C
100
10-1
100
101
102
103
0
10
20
30
40
50
60
70
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=96ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
226
221
216
211
206
201
196
191
186
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2021-02-11
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
IPTG111N20NM3FD
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-HSOG-8-U01
DATE: 08.02.2021
REVISION: 01
MILLIMETERS
DIMENSIONS
MIN.
MAX.
2.40
0.10
0.80
0.60
10.10
9.56
11.90
8.75
7.01
A
A1
b
2.20
0.00
0.60
0.40
9.70
9.36
11.50
8.45
6.81
c
D
D1
E
E1
E2
e
1.20
8.40
e1
L
0.66
2.90
0.86
3.10
P
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HSOG-8-1,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2021-02-11
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
IPTG111N20NM3FD
RevisionꢀHistory
IPTG111N20NM3FD
Revision:ꢀ2021-02-11,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2021-02-11
Trademarks
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documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2021-02-11
相关型号：
IPTG210N25NM3FD
OptiMOS™ 功率 MOSFET IPTG210N25NM3FD 采用改良的翼型引脚 TO-Leadless 封装。TOLG 封装尺寸与 TO-Leadless 封装尺寸互相兼容，与 D2PAK 7 引脚相比，TOLG 封装具有出色的电器性能，同时减少了约 60% 的电路板空间。这款 OptiMOS™ 3 - 250 V 的新型封装具有非常低的 RDS(on) ，而且经过优化，可处理大于 300 A 的高电流。
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