IPU95R450P7 [INFINEON]
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market.;
| 型号： | IPU95R450P7 |
| 厂家： | 
Infineon |
| 描述： | Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. |
| 文件： | 总14页 (文件大小：1418K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPU95R450P7
MOSFET
IPAK
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
Theꢀlatestꢀ950VꢀCoolMOS™ꢀP7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀ950V
superꢀjunctionꢀtechnologiesꢀandꢀcombinesꢀbest-in-classꢀperformanceꢀwith
stateꢀofꢀtheꢀartꢀease-of-use,ꢀresultingꢀfromꢀInfineon’sꢀoverꢀ18ꢀyears
pioneeringꢀsuperꢀjunctionꢀtechnologyꢀinnovation.
tab
Features
•ꢀBest-in-classꢀFOMꢀRDS(on)ꢀ*ꢀEoss;ꢀreducedꢀQg,ꢀCiss,ꢀandꢀCoss
•ꢀBest-in-classꢀIPAKꢀRDS(on)
1
2
3
•ꢀBest-in-classꢀV(GS)thꢀofꢀ3VꢀandꢀsmallestꢀꢀV(GS)thꢀvariationꢀofꢀ±0.5V
•ꢀIntegratedꢀZenerꢀDiodeꢀESDꢀprotection
•ꢀBest-in-classꢀCoolMOS™ꢀqualityꢀandꢀreliability
•ꢀFullyꢀoptimizedꢀportfolio
Drain
Pin 2
Benefits
*1
Gate
Pin 1
•ꢀBest-in-classꢀperformance
*2
•ꢀEnablingꢀhigherꢀpowerꢀdensityꢀdesigns,ꢀBOMꢀsavingsꢀandꢀlower
assemblyꢀcosts
•ꢀEasyꢀtoꢀdriveꢀandꢀtoꢀparallel
Source
Pin 3
*1: Internal body diode
*2: Integrated ESD diode
•ꢀBetterꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures
•ꢀLessꢀproductionꢀissuesꢀandꢀreducedꢀfieldꢀreturns
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀforꢀfineꢀtuningꢀofꢀdesigns
Potentialꢀapplications
RecommendedꢀforꢀflybackꢀtopologiesꢀforꢀLEDꢀLighting,ꢀlowꢀpower
ChargersꢀandꢀAdapters,ꢀSmartꢀMeter,ꢀAUXꢀpowerꢀandꢀIndustrialꢀpower.
AlsoꢀsuitableꢀforꢀPFCꢀstageꢀinꢀConsumerꢀandꢀSolarꢀapplications.
ProductꢀValidation:ꢀFullyꢀqualifiedꢀacc.ꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj=25°C
RDS(on),max
Qg,typ
Value
950
0.45
35
Unit
V
Ω
nC
A
ID
14
Eoss @ 500V
VGS(th),typ
2.9
3
µJ
V
ESD class (HBM)
2
-
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPU95R450P7
PG-TO251-3
95R450P7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2022-01-13
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R450P7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2022-01-13
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R450P7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
14
8.6
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
-
-
-
-
-
-
43
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
29
mJ
mJ
ID=1.8A; VDD=50V; see table 10
ID=1.8A; VDD=50V; see table 10
EAR
0.36
Application (Flyback) relevant
avalanche current, single pulse3)
measured with standard leakage
inductance of transformer of 10µH
IAS
-
7.0
-
A
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
-
-
-
-
-
-
-
-
-
100
20
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
AC (f>1 Hz)
104
150
150
-
W
°C
°C
TC=25°C
Storage temperature
-55
-55
-
-
-
Operating junction temperature
Mounting torque
-
Ncm -
Continuous diode forward current
Diode pulse current2)
IS
-
9.6
43
A
A
TC=25°C
IS,pulse
-
TC=25°C
VDS=0...400V,ꢀISD<=3.6A,ꢀTj=25°Cꢀꢀꢀꢀ
Reverse diode dv/dt4)
dv/dt
-
-
1
V/ns
see table 8
VDS=0...400V,ꢀISD<=3.6A,ꢀTj=25°Cꢀꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
diF/dt
-
-
-
-
50
A/µs
see table 8
VISO
n.a.
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj,max. Maximum Duty Cycle D = 0.5
2) Pulse width tp limited by Tj,max
3) For further explanation please read AN - CoolMOSTM 700V P7 & 950V P7
4) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2022-01-13
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R450P7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
1.2
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
62
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2022-01-13
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R450P7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
950
2.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
3
3.5
VDS=VGS,ꢀID=0.36mA
-
-
-
10
1
-
VDS=950V,ꢀVGS=0V,ꢀTj=25°C
VDS=950V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
IGSS
-
-
1000 nA
VGS=20V,ꢀVDS=0V
-
-
0.38
0.847
0.45
-
VGS=10V,ꢀID=7.2A,ꢀTj=25°C
VGS=10V,ꢀID=7.2A,ꢀTj=150°C
RDS(on)
RG
Ω
-
1
-
Ω
f=250kHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1053
16
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
27
273
10
7
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related2)
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=7.2A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=7.2A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
VDD=400V,ꢀVGS=13V,ꢀID=7.2A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
45
5
VDD=400V,ꢀVGS=13V,ꢀID=7.2A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
5
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=760V,ꢀID=7.2A,ꢀVGS=0ꢀtoꢀ10V
VDD=760V,ꢀID=7.2A,ꢀVGS=0ꢀtoꢀ10V
VDD=760V,ꢀID=7.2A,ꢀVGS=0ꢀtoꢀ10V
VDD=760V,ꢀID=7.2A,ꢀVGS=0ꢀtoꢀ10V
Qgd
11
Qg
35
Gate plateau voltage
Vplateau
4.4
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2022-01-13
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R450P7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=7.2A,ꢀTj=25°C
VR=400V,ꢀIF=3.6A,ꢀdiF/dt=50A/µs;
see table 8
-
-
-
707
6
-
-
-
ns
VR=400V,ꢀIF=3.6A,ꢀdiF/dt=50A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=3.6A,ꢀdiF/dt=50A/µs;
see table 8
Peak reverse recovery current
16
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2022-01-13
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R450P7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
120
102
1 µs
10 µs
100
80
60
40
20
0
101
100
100 µs
1 ms
10-1
10-2
10-3
10-4
10 ms
DC
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
1 µs
101
100
10 µs
100
100 µs
0.5
10-1
10-2
10-3
10-4
1 ms
0.2
0.1
10 ms
DC
10-1
0.05
0.02
0.01
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2022-01-13
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R450P7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
30
20
20 V
10 V
25
20
15
10
5
20 V
8 V
10 V
7 V
15
6 V
8 V
7 V
5.5 V
6 V
5.5 V
5 V
10
5 V
4.5 V
4.5 V
5
0
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
1.400
2.5
20 V
10 V
6 V
5.5 V
4 V
4.5 V
1.200
1.000
0.800
0.600
2.0
1.5
1.0
0.5
0
5
10
15
20
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=7.2ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2022-01-13
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R450P7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
30
12
25 °C
25
10
8
20
760 V
120 V
15
6
4
2
0
150 °C
10
5
0
0
2
4
6
8
10
12
0
5
10
15
20
25
30
35
40
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=7.2ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
30
25
20
15
10
5
101
25 °C
125 °C
100
10-1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=1.8ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2022-01-13
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R450P7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
1100
105
104
1050
1000
950
103
Ciss
102
Coss
101
900
Crss
100
850
10-1
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
12
10
8
6
4
2
0
0
100 200 300 400 500 600 700 800 900 1000
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2022-01-13
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R450P7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2022-01-13
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R450P7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TO251-3-U04
REVISION: 01
DATE: 12.10.2021
MILLIMETERS
DIMENSIONS
MIN.
MAX.
2.41
1.14
0.89
1.15
5.50
0.60
0.89
6.22
5.77
6.73
5.21
A
A1
b
2.16
0.90
0.64
0.65
4.95
0.46
0.46
5.97
5.04
6.35
4.70
b1
b2
c
c1
D
D1
E
E1
e
2.29
4.58
3
e1
N
H
15.74
8.89
0.85
0.88
17.24
9.65
2.29
1.37
L
L1
L2
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO251-3,ꢀdimensionsꢀinꢀmm
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2022-01-13
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R450P7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀP7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀP7ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀP7ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2022-01-13
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R450P7
RevisionꢀHistory
IPU95R450P7
Revision:ꢀ2022-01-13,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
2018-06-01
2022-01-13
Updated Package Outlines
Trademarks
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intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
14
Rev.ꢀ2.1,ꢀꢀ2022-01-13
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