IPW60R041P6 [INFINEON]
英飞凌 CoolMOS™ P6 超结 MOSFET 系列旨在实现更高的系统效率，同时易于在 CoolMOS™ P6 中设计，填补了专注于提供最佳性能的技术与更专注于易用性的技术之间的空白。;
| 型号： | IPW60R041P6 |
| 厂家： | 
Infineon |
| 描述： | 英飞凌 CoolMOS™ P6 超结 MOSFET 系列旨在实现更高的系统效率，同时易于在 CoolMOS™ P6 中设计，填补了专注于提供最佳性能的技术与更专注于易用性的技术之间的空白。 |
| 文件： | 总15页 (文件大小：1932K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
CoolMOS™ꢀP6
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R041P6
DataꢀSheet
Rev.ꢀ2.0
Final
PowerꢀManagementꢀ&ꢀMultimarket
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R041P6
TO-247
1ꢀꢀꢀꢀꢀDescription
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀP6ꢀseriesꢀcombinesꢀthe
experienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.
TheꢀofferedꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFET
whileꢀnotꢀsacrificingꢀeaseꢀofꢀuse.ꢀExtremelyꢀlowꢀswitchingꢀandꢀconduction
lossesꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompact,
lighterꢀandꢀcooler.
Features
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggedness
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀVeryꢀhighꢀcommutationꢀruggedness
Drain
Pin 2
•ꢀEasyꢀtoꢀuse/drive
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20
andꢀJESD22)
Gate
Pin 1
Source
Pin 3
Applications
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTV,ꢀLighting,ꢀServer,ꢀTelecom
andꢀUPS.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Qg.typ
Value
650
41
Unit
V
mΩ
nC
A
170
267
20.5
300
ID,pulse
Eoss@400V
Body diode di/dt
µJ
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPW60R041P6
PG-TO 247
6R041P6
see Appendix A
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R041P6
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R041P6
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-
-
-
-
77.5
49.0
TC=25°C
A
Continuous drain current 1)
ID
TC=100°C
Pulsed drain current 2)
ID,pulse
EAS
-
-
-
-
-
-
-
-
267
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
-
1954 mJ
ID=13.4A; VDD=50V; see table 10
EAR
-
2.96
13.4
100
20
mJ
A
ID=13.4A; VDD=50V; see table 10
-
IAR
-
dv/dt
VGS
VGS
-
V/ns VDS=0...400V
-20
-30
V
V
static;
30
AC (f>1 Hz)
Power dissipation (Non FullPAK)
TO-247
Ptot
-
-
481
W
TC=25°C
Storage temperature
Tstg
Tj
-55
-55
-
-
150
150
°C
°C
-
-
Operating junction temperature
Mounting torque (Non FullPAK)
TO-247
-
-
-
60
Ncm M3 and M3.5 screws
Continuous diode forward current
Diode pulse current2)
IS
-
-
-
-
67.2
267
A
A
TC=25°C
IS,pulse
TC=25°C
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Reverse diode dv/dt 3)
dv/dt
dif/dt
-
-
-
-
15
V/ns
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Maximum diode commutation speed
300
A/µs
1) Limited by Tj max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj,max
ꢀ3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R041P6
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀ(NonꢀFullPAK)ꢀTO-247
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.26
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
Tsold
-
-
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R041P6
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3.5
Typ.
-
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
V
V
VGS=0V,ꢀID=1mA
4.0
4.5
VDS=VGS,ꢀID=2.96mA
-
-
-
10
5
-
VDS=600,ꢀVGS=0V,ꢀTj=25°C
VDS=600,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.037 0.041
0.096
VGS=10V,ꢀID=35.5A,ꢀTj=25°C
VGS=10V,ꢀID=35.5A,ꢀTj=150°C
RDS(on)
RG
-
-
1
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
8180
310
-
-
pF
pF
VGS=0V,ꢀVDS=100V,ꢀf=1MHz
VGS=0V,ꢀVDS=100V,ꢀf=1MHz
Coss
Effective output capacitance,
energy related 1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
260
1200
29
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance,
time related 2)
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=44.4A,
RG=1.7Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=44.4A,
RG=1.7Ω;ꢀseeꢀtableꢀ9
27
VDD=400V,ꢀVGS=13V,ꢀID=44.4A,
RG=1.7Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
90
VDD=400V,ꢀVGS=13ꢀV,ꢀID=44.4A,
RG=1.7Ω;ꢀseeꢀtableꢀ9
5
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
50
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=44.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=44.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=44.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=44.4A,ꢀVGS=0ꢀtoꢀ10V
Qgd
59
Qg
170
6.1
Gate plateau voltage
Vplateau
ꢀ1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
ꢀ2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R041P6
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
0.9
-
V
VGS=0V,ꢀIF=44.4A,ꢀTj=25°C
VR=400V,ꢀIF=44.4A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
630
19
-
-
-
ns
VR=400V,ꢀIF=44.4A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=44.4A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
56
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R041P6
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
500
103
1 µs
450
400
350
300
250
200
150
100
50
10 µs
102
100 µs
1 ms
101
10 ms
100
DC
10-1
10-2
10-3
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
1 µs
102
101
10 µs
100 µs
0.5
10-1
1 ms
0.2
10 ms
0.1
100
DC
0.05
0.02
10-1
10-2
10-3
10-2
0.01
single pulse
10-3
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R041P6
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
280
170
20 V
20 V
160
10 V
10 V
150
240
200
160
120
80
8 V
140
130
120
8 V
7 V
110
100
90
80
70
60
50
40
30
20
10
0
7 V
6 V
5.5 V
6 V
40
5 V
5.5 V
5 V
4.5 V
4.5 V
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.15
0.12
0.11
0.10
0.09
0.08
0.07
0.14
0.13
0.12
0.11
5.5 V
6 V
6.5 V
7 V
0.10
0.09
0.08
0.07
0.06
0.05
0.06
98%
0.05
10 V
typ
20 V
0.04
0.03
0.02
0.01
0.00
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=35.5ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R041P6
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
300
10
9
8
25 °C
250
200
150
100
50
120 V
480 V
7
6
5
4
3
2
1
0
150 °C
0
0
2
4
6
8
10
12
14
0
50
100
150
200
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=44.4ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
2000
1800
1600
1400
1200
1000
800
600
400
200
0
101
125 °C
25 °C
100
10-1
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=13.4ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R041P6
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
700
105
680
660
640
620
600
580
560
540
520
Ciss
104
103
Coss
102
Crss
101
100
-75 -50 -25
0
25
50
75 100 125 150 175
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R041P6
6ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
VDS
Rg1
VDS(peak)
VDS
trr
VDS
IF
tF
tS
dIF / dt
Rg 2
IF
t
10%Irrm
Q
F
Q
S
IF
dI / dt
rr
trr =tF +tS
rr
Irrm
Q =QF +Q
S
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VD
VDS
VDS
VDS
ID
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R041P6
7ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R041P6
8ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSTMꢀP6ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀP6ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀP6ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R041P6
RevisionꢀHistory
IPW60R041P6
Revision:ꢀ2014-03-07,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2014-03-07
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Final Data Sheet
15
Rev.ꢀ2.0,ꢀꢀ2014-03-07
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