IPW60R070P6 [INFINEON]

英飞凌 CoolMOS™ P6 超结 MOSFET 系列旨在实现更高的系统效率,同时易于在 CoolMOS™ P6 中设计,填补了专注于提供最佳性能的技术与更专注于易用性的技术之间的空白。;
IPW60R070P6
型号: IPW60R070P6
厂家: Infineon    Infineon
描述:

英飞凌 CoolMOS™ P6 超结 MOSFET 系列旨在实现更高的系统效率,同时易于在 CoolMOS™ P6 中设计,填补了专注于提供最佳性能的技术与更专注于易用性的技术之间的空白。

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中文:  中文翻译
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MOSFET  
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor  
CoolMOS™ꢀP6  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R070P6  
DataꢀSheet  
Rev.ꢀ2.0  
Final  
PowerꢀManagementꢀ&ꢀMultimarket  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R070P6  
TO-247  
1ꢀꢀꢀꢀꢀDescription  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀP6ꢀseriesꢀcombinesꢀthe  
experienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.  
TheꢀofferedꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFET  
whileꢀnotꢀsacrificingꢀeaseꢀofꢀuse.ꢀExtremelyꢀlowꢀswitchingꢀandꢀconduction  
lossesꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompact,  
lighterꢀandꢀcooler.  
Features  
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggedness  
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss  
•ꢀVeryꢀhighꢀcommutationꢀruggedness  
Drain  
Pin 2  
•ꢀEasyꢀtoꢀuse/drive  
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound  
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20  
andꢀJESD22)  
Gate  
Pin 1  
Source  
Pin 3  
Applications  
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages  
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTV,ꢀLighting,ꢀServer,ꢀTelecom  
andꢀUPS.  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Qg.typ  
Value  
650  
70  
Unit  
V
m  
nC  
A
100  
156  
12.3  
300  
ID,pulse  
Eoss@400V  
Body diode di/dt  
µJ  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPW60R070P6  
PG-TO 247  
6R070P6  
see Appendix A  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R070P6  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R070P6  
2ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
-
-
-
-
53.5  
33.8  
TC=25°C  
A
Continuous drain current 1)  
ID  
TC=100°C  
Pulsed drain current 2)  
ID,pulse  
EAS  
-
-
-
-
-
-
-
-
156  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, repetitive  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
-
1136 mJ  
ID=9.3A; VDD=50V; see table 10  
EAR  
-
1.72  
9.3  
100  
20  
mJ  
A
ID=9.3A; VDD=50V; see table 10  
-
IAR  
-
dv/dt  
VGS  
VGS  
-
V/ns VDS=0...400V  
-20  
-30  
V
V
static;  
30  
AC (f>1 Hz)  
Power dissipation (Non FullPAK)  
TO-247  
Ptot  
-
-
391  
W
TC=25°C  
Storage temperature  
Tstg  
Tj  
-55  
-55  
-
-
150  
150  
°C  
°C  
-
-
Operating junction temperature  
Mounting torque (Non FullPAK)  
TO-247  
-
-
-
60  
Ncm M3 and M3.5 screws  
Continuous diode forward current  
Diode pulse current2)  
IS  
-
-
-
-
46.3  
156  
A
A
TC=25°C  
IS,pulse  
TC=25°C  
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ  
see table 8  
Reverse diode dv/dt 3)  
dv/dt  
dif/dt  
-
-
-
-
15  
V/ns  
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ  
see table 8  
Maximum diode commutation speed  
300  
A/µs  
1) Limited by Tj max. Maximum duty cycle D=0.75  
2) Pulse width tp limited by Tj,max  
ꢀ3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R070P6  
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀ(NonꢀFullPAK)ꢀTO-247  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
0.32  
62  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W leaded  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
-
-
260  
°C  
1.6mm (0.063 in.) from case for 10s  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R070P6  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
600  
3.5  
Typ.  
-
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
V
V
VGS=0V,ꢀID=1mA  
4.0  
4.5  
VDS=VGS,ꢀID=1.72mA  
-
-
-
10  
5
-
VDS=600,ꢀVGS=0V,ꢀTj=25°C  
VDS=600,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
0.063 0.070  
0.164  
VGS=10V,ꢀID=20.6A,ꢀTj=25°C  
VGS=10V,ꢀID=20.6A,ꢀTj=150°C  
RDS(on)  
RG  
-
-
1
-
f=1MHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
4750  
190  
-
-
pF  
pF  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
Coss  
Effective output capacitance,  
energy related 1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
150  
703  
23  
15  
64  
4
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance,  
time related 2)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=13V,ꢀID=25.8A,  
RG=1.7;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=25.8A,  
RG=1.7;ꢀseeꢀtableꢀ9  
VDD=400V,ꢀVGS=13V,ꢀID=25.8A,  
RG=1.7;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
VDD=400V,ꢀVGS=13ꢀV,ꢀID=25.8A,  
RG=1.7;ꢀseeꢀtableꢀ9  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
30  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=25.8A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=25.8A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=25.8A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=25.8A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
35  
Qg  
100  
6.1  
Gate plateau voltage  
Vplateau  
ꢀ1)Co(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
ꢀ2)Co(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R070P6  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
0.9  
-
V
VGS=0V,ꢀIF=25.8A,ꢀTj=25°C  
VR=400V,ꢀIF=25.8A,ꢀdiF/dt=100A/µs;  
see table 8  
-
-
-
520  
12  
-
-
-
ns  
VR=400V,ꢀIF=25.8A,ꢀdiF/dt=100A/µs;  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=400V,ꢀIF=25.8A,ꢀdiF/dt=100A/µs;  
see table 8  
Peak reverse recovery current  
44  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R070P6  
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
400  
103  
1 µs  
350  
300  
250  
200  
150  
100  
50  
102  
10 µs  
100 µs  
101  
1 ms  
10 ms  
100  
DC  
10-1  
10-2  
10-3  
0
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
100  
1 µs  
102  
101  
10 µs  
0.5  
100 µs  
10-1  
0.2  
1 ms  
0.1  
10 ms  
100  
0.05  
0.02  
DC  
10-1  
10-2  
10-3  
10-2  
0.01  
single pulse  
10-3  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R070P6  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
160  
150  
140  
130  
120  
110  
100  
90  
100  
20 V  
20 V  
95  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
10 V  
8 V  
10 V  
8 V  
7 V  
80  
7 V  
70  
6 V  
60  
50  
40  
5.5 V  
30  
6 V  
20  
5 V  
5.5 V  
5 V  
10  
4.5 V  
4.5 V  
0
0
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
0.50  
0.20  
0.45  
0.40  
0.35  
0.15  
7 V  
5.5 V  
0.30  
0.25  
0.20  
0.15  
0.10  
0.10  
6 V  
6.5 V  
typ  
98%  
10 V  
20 V  
0.05  
0.00  
0
10  
20  
30  
40  
50  
60  
70  
80  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=20.6ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R070P6  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
160  
10  
25 °C  
9
8
140  
120  
100  
80  
120 V  
480 V  
7
6
5
4
3
2
1
0
150 °C  
60  
40  
20  
0
0
2
4
6
8
10  
12  
14  
0
10 20 30 40 50 60 70 80 90 100 110  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=25.8ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀAvalancheꢀenergy  
102  
1200  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
101  
125 °C  
25 °C  
100  
10-1  
0.0  
0.5  
1.0  
1.5  
2.0  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=9.3ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R070P6  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
700  
104  
Ciss  
680  
660  
640  
620  
600  
580  
560  
540  
520  
103  
Coss  
102  
101  
Crss  
100  
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
17  
16  
15  
14  
13  
12  
11  
10  
9
8
7
6
5
4
3
2
1
0
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R070P6  
6ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
V,I  
VDS  
Rg1  
VDS(peak)  
VDS  
trr  
VDS  
IF  
tF  
tS  
dIF / dt  
Rg 2  
IF  
t
10%Irrm  
Q
F
Q
S
IF  
dI / dt  
rr  
trr =tF +tS  
rr  
Irrm  
Q =QF +Q  
S
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VD  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
12  
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R070P6  
7ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
13  
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R070P6  
8ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
IFXꢀCoolMOSTMꢀP6ꢀWebpage:ꢀwww.infineon.com  
IFXꢀCoolMOSTMꢀP6ꢀapplicationꢀnote:ꢀwww.infineon.com  
IFXꢀCoolMOSTMꢀP6ꢀsimulationꢀmodel:ꢀwww.infineon.com  
IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
14  
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R070P6  
RevisionꢀHistory  
IPW60R070P6  
Revision:ꢀ2014-03-07,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
2.0  
Subjects (major changes since last revision)  
Release of final version  
2014-03-07  
WeꢀListenꢀtoꢀYourꢀComments  
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Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2014ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith  
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication  
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout  
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
15  
Rev.ꢀ2.0,ꢀꢀ2014-03-07  

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