IPWS65R022CFD7A [INFINEON]

采用 TO-247-3 封装的 22 MΩ IPWS65R022CFD7A 为车规 650 V CoolMOS™ 超结功率 MOSFET CFD7A 系列产品。与上代产品相比，CoolMOS™ CFD7A 的可靠性更强，功率密度更高，为设计带来了更大的灵活性;


型号：	IPWS65R022CFD7A
厂家：	Infineon
描述：	采用 TO-247-3 封装的 22 MΩ IPWS65R022CFD7A 为车规 650 V CoolMOS™ 超结功率 MOSFET CFD7A 系列产品。与上代产品相比，CoolMOS™ CFD7A 的可靠性更强，功率密度更高，为设计带来了更大的灵活性
文件：	总14页 (文件大小：1567K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPWS65R022CFD7A

MOSFET

PG-TOꢀ247-3

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

650VꢀCoolMOS™ꢀCFD7AꢀisꢀInfineon'sꢀlatestꢀgenerationꢀofꢀmarketꢀleading

automotiveꢀqualifiedꢀhighꢀvoltageꢀCoolMOS™ꢀMOSFETs.ꢀInꢀadditionꢀtoꢀthe

well-knownꢀattributesꢀofꢀhighꢀqualityꢀandꢀreliabilityꢀrequiredꢀbyꢀthe

automotiveꢀindustry,ꢀtheꢀnewꢀCoolMOS™ꢀCFD7Aꢀseriesꢀprovidesꢀforꢀan

integratedꢀfastꢀbodyꢀdiodeꢀandꢀcanꢀbeꢀusedꢀforꢀPFCꢀandꢀresonant

switchingꢀtopologiesꢀlikeꢀtheꢀZVSꢀphase-shiftꢀfull-bridgeꢀandꢀLLC.

Tab

Features

•ꢀLatestꢀ650Vꢀautomotiveꢀqualifiedꢀtechnologyꢀwithꢀintegratedꢀfastꢀbody

diodeꢀonꢀtheꢀmarketꢀfeaturingꢀultraꢀlowꢀQ_rr

•ꢀLowestꢀFOMꢀR_DS(on)*Q_gꢀandꢀR_DS(on)*E_oss

•ꢀ100%ꢀavalancheꢀtested

Drain

•ꢀBest-in-classꢀR_DS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages

Pin 2, Tab

Benefits

Gate

Pin 1

•ꢀOptimizedꢀforꢀhigherꢀbatteryꢀvoltagesꢀupꢀtoꢀ475ꢀVꢀthanksꢀtoꢀfurther

improvedꢀrobustness

•ꢀLowerꢀswitchingꢀlossesꢀenablingꢀhigherꢀswitchingꢀfrequencies

•ꢀHighꢀqualityꢀandꢀreliability

Source

Pin 3

*1: Internal body diode

•ꢀIncreasedꢀefficiencyꢀinꢀlightꢀloadꢀandꢀfullꢀloadꢀconditions

Potentialꢀapplications

SuitableꢀforꢀPFCꢀandꢀDC-DCꢀstagesꢀfor:

•ꢀUnidirectionalꢀandꢀbidirectionalꢀDC-DCꢀconverters,

•ꢀOn-BoardꢀbatteryꢀChargers

Productꢀvalidation

QualifiedꢀaccordingꢀtoꢀAECꢀQ101

Pleaseꢀnote:ꢀForꢀproductionꢀpartꢀapprovalꢀprocessꢀ(PPAP)ꢀreleaseꢀwe

proposeꢀtoꢀshareꢀapplicationꢀrelatedꢀinformationꢀduringꢀanꢀearlyꢀdesign

phaseꢀtoꢀavoidꢀdelaysꢀinꢀPPAPꢀrelease.ꢀPleaseꢀcontactꢀInfineonꢀsales

office.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

Unit

V_DS

650

R_DS(on),max

Q_g,typ

mΩ

234

I_D,pulse

495

E_oss@ 400V

Body diode di_F/dt

29.5

1300

µJ

A/µs

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPWS65R022CFD7A

PG-TO247-3

65A022F7

see Appendix A

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-18

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPWS65R022CFD7A

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-18

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPWS65R022CFD7A

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

T_C=25°C

Continuous drain current¹⁾

I_D

T_C=100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

I_AS

495

582

8.3

120

T_C=25°C

Avalanche energy, single pulse

Avalanche current, single pulse

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation

I_D=8.3A; V_DD=50V; see table 10

dv/dt

V_GS

V_GS,pulse

P_tot

V/ns V_DS=0...400V

-20

-30

static;

f_repetition<=100kHz, t_pulse<= 2ns

446

150

°C

T_C=25°C

Storage temperature

T_stg

T_j

-55

-40

Operating junction temperature

Mounting torque

Ncm M3 and M3.5 screws

Continuous diode forward current

Diode pulse current²⁾

I_S

T_C=25°C

I_S,pulse

495

V_DS=0...400V,ꢀI_SD<=58.2A,ꢀT_j=25°Cꢀꢀ

Reverse diode dv/dt³⁾

dv/dt

di_F/dt

V/ns

see table 8

V_DS=0...400V,ꢀI_SD<=58.2A,ꢀT_j=25°Cꢀꢀ

Maximum diode commutation speed

1300 A/µs

see table 8

¹⁾Limited by T_{j max}

²⁾Pulse width t_plimited by T_j,max

³⁾Identical low side and high side switch with identical R_G

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-18

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPWS65R022CFD7A

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Thermal resistance, junction - case

R_thJC

T_sold

0.28

°C/W -

Soldering temperature, wavesoldering

only allowed at leads

260

°C

1.6mm (0.063 in.) from case for 10s

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-18

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPWS65R022CFD7A

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

For applications with applied blocking voltage > 475 V, it is required that the customer evaluates the impact of

cosmic radiation effect in early design phase and contacts the Infineon sales office for the necessary technical

support by Infineon.

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

650

3.5

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage¹⁾

V_(BR)DSS

V_(GS)th

V_GS=0V,ꢀI_D=1mA

4.5

V_DS=V_GS,ꢀI_D=2.91mA

V_DS=650V,ꢀV_GS=0V,ꢀT_j=25°C

V_DS=650V,ꢀV_GS=0V,ꢀT_j=150°C

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

I_DSS

µA

Ω

210

I_GSS

0.1

V_GS=20V,ꢀV_DS=0V

0.018 0.022

0.04

V_GS=10V,ꢀI_D=58.2A,ꢀT_j=25°C

V_GS=10V,ꢀI_D=58.2A,ꢀT_j=150°C

R_DS(on)

R_G

2.7

Ω

f=250kHz,ꢀopenꢀdrain

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

External parasitic elements (PCB layout) influence switching behavior significantly.

Stray inductances and coupling capacitances must be minimized.

For layout recommendations please use provided application notes or contact Infineon sales office.

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

Input capacitance

Output capacitance

C_iss

11659 -

V_GS=0V,ꢀV_DS=400V,ꢀf=250kHz

C_oss

151

369

Effective output capacitance, energy

related²⁾

C_o(er)

C_o(tr)

t_d(on)

t_r

V_GS=0V,ꢀV_DS=0...400V

Effective output capacitance, time

related³⁾

3899

I_D=constant,ꢀV_GS=0V,ꢀV_DS=0...400V

V_DD=400V,ꢀV_GS=13V,ꢀI_D=58.2A,

R_G=1.8Ω;ꢀseeꢀtableꢀ9

Turn-on delay time

Rise time

V_DD=400V,ꢀV_GS=13V,ꢀI_D=58.2A,

R_G=1.8Ω;ꢀseeꢀtableꢀ9

V_DD=400V,ꢀV_GS=13V,ꢀI_D=58.2A,

R_G=1.8Ω;ꢀseeꢀtableꢀ9

Turn-off delay time

Fall time

t_d(off)

t_f

198

V_DD=400V,ꢀV_GS=13V,ꢀI_D=58.2A,

R_G=1.8Ω;ꢀseeꢀtableꢀ9

¹⁾We do not recommend using the CoolMOS mentioned in this datasheet to operate in “linear mode”. For assessment of

potential “linear mode”, please contact Infineon sales office.

²⁾ꢀC_o(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

³⁾ꢀC_o(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-18

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPWS65R022CFD7A

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

V_DD=400V,ꢀI_D=58.2A,ꢀV_GS=0ꢀtoꢀ10V

Q_gd

Q_g

234

5.7

Gate plateau voltage

V_plateau

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics

Values

Typ.

1.1

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Diode forward voltage

Reverse recovery time

V_SD

t_rr

V_GS=0V,ꢀI_F=58.2A,ꢀT_j=25°C

V_R=400V,ꢀI_F=58.2A,ꢀdi_F/dt=100A/µs;

see table 8

260

V_R=400V,ꢀI_F=58.2A,ꢀdi_F/dt=100A/µs;

see table 8

Reverse recovery charge

Q_rr

I_rrm

µC

V_R=400V,ꢀI_F=58.2A,ꢀdi_F/dt=100A/µs;

see table 8

Peak reverse recovery current

14.2

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-18

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPWS65R022CFD7A

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams

Diagramꢀ1:ꢀPowerꢀdissipation

Diagramꢀ2:ꢀSafeꢀoperatingꢀarea

500

10³

10²

10¹

10⁰

10^-1

10^-2

1 µs

10 µs

400

300

200

100

100 µs

1 ms

100

125

150

10⁰

10¹

10²

10³

T_Cꢀ[°C]

V_DSꢀ[V]

P_tot=f(T_C)

I_D=f(V_DS);ꢀT_C=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance

10³

10⁰

1 µs

10²

10¹

10 µs

0.5

10^-1

100 µs

0.2

0.1

0.05

1 ms

10⁰

0.02

10^-2

0.01

10^-1

single pulse

10^-2

10^-3

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

V_DSꢀ[V]

t_pꢀ[s]

I_D=f(V_DS);ꢀT_C=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Z_thJCꢀ=f(t_P);ꢀparameter:ꢀD=t_p/T

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-18

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPWS65R022CFD7A

Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics

Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics

800

500

400

300

200

100

20 V

700

600

500

400

300

200

100

20 V

10 V

8 V

7 V

6 V

5.5 V

5 V

5.5 V

5 V

4.5 V

V_DSꢀ[V]

I_D=f(V_DS);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

I_D=f(V_DS);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance

Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance

0.060

2.5

0.055

0.050

2.0

1.5

1.0

0.5

6.5 V

10 V

5.5 V

7 V

6 V

0.045

0.040

0.035

0.030

20 V

100

200

300

400

500

-50

-25

100

125

150

I_Dꢀ[A]

T_jꢀ[°C]

R_DS(on)=f(I_D);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

R_DS(on)=f(T_j);ꢀI_D=58.2ꢀA;ꢀV_GS=10ꢀV

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-18

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPWS65R022CFD7A

Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics

Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge

800

700

600

500

400

300

200

100

25 °C

400 V

120 V

150 °C

100

150

200

250

300

V_GSꢀ[V]

Q_gateꢀ[nC]

I_D=f(V_GS);ꢀV_DS=20V;ꢀparameter:ꢀT_j

V_GS=f(Q_gate);ꢀI_D=58.2ꢀAꢀpulsed;ꢀparameter:ꢀV_DD

Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode

Diagramꢀ12:ꢀAvalancheꢀenergy

10³

600

500

400

300

200

100

10²

25 °C

10¹

125 °C

10⁰

10^-1

0.0

0.3

0.6

0.9

1.2

1.5

100

125

150

V_SDꢀ[V]

T_jꢀ[°C]

I_F=f(V_SD);ꢀparameter:ꢀT_j

E_AS=f(T_j);ꢀI_D=8.3ꢀA;ꢀV_DD=50ꢀV

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-18

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPWS65R022CFD7A

Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage

Diagramꢀ14:ꢀTyp.ꢀcapacitances

730

10⁶

10⁵

10⁴

10³

10²

10¹

10⁰

700

670

640

610

580

Ciss

Coss

Crss

-50

-25

100

125

150

100

200

300

400

500

T_jꢀ[°C]

V_DSꢀ[V]

V_BR(DSS)=f(T_j);ꢀI_D=1ꢀmA

C=f(V_DS);ꢀV_GS=0ꢀV;ꢀf=250ꢀkHz

Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy

100

200

300

400

500

V_DSꢀ[V]

E_oss=f(V_DS

)

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-18

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPWS65R022CFD7A

5ꢀꢀꢀꢀꢀTestꢀCircuits

Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics

Test circuit for diode characteristics

Diode recovery waveform

R_g1

V_DS

R_g2

I_F

R_g1 = R_g2

Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes

Switching times test circuit for inductive load

Switching times waveform

V_DS

90%

10%

V_DS

V_GS

t_d(off)

t_f

t_d(on)

t_on

t_r

t_off

Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload

Unclamped inductive load test circuit

Unclamped inductive waveform

V_(BR)DS

I_D

V_DS

I_D

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-18

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPWS65R022CFD7A

6ꢀꢀꢀꢀꢀPackageꢀOutlines

PG-TO247-3-31

Z8B00198400 Rev. 01

Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO247-3,ꢀdimensionsꢀinꢀmm

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-18

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPWS65R022CFD7A

7ꢀꢀꢀꢀꢀAppendixꢀA

Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks

• IFXꢀCoolMOSꢀCFD7AꢀWebpage:ꢀwww.infineon.com

• IFXꢀCoolMOSꢀCFD7Aꢀapplicationꢀnote:ꢀwww.infineon.com

• IFXꢀCoolMOSꢀCFD7Aꢀsimulationꢀmodel:ꢀwww.infineon.com

• IFXꢀDesignꢀtools:ꢀwww.infineon.com

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-18

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPWS65R022CFD7A

RevisionꢀHistory

IPWS65R022CFD7A

Revision:ꢀ2021-11-18,ꢀRev.ꢀ2.1

Previous Revision

Revision Date

Subjects (major changes since last revision)

Release of final version

2.0

2.1

2021-05-21

2021-11-18

Change of wording regarding breakdown voltage / cosmic ray

Trademarks

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Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-18

IPWS65R022CFD7A [INFINEON]

相关型号：

IPWS65R035CFD7A

IPWS65R050CFD7A

IPX0AH

IPX0AM

IPX0AS

IPX0AW

IPX0BH

IPX0BM

IPX0BS

IPX0BW

IPX0CH

IPX0CM