IPZ60R017C7 [INFINEON]

600V CoolMOS™ C7 超级结（SJ）MOSFET 系列比 CoolMOS™ CP 系列可减少大约 50% 的关断损耗（E oss），在 PFC、TTF 及其他硬开关拓扑结构中可提供卓越的性能。另外，IPL60R185C7也是高功率密度充电器的不二之选！;


型号：	IPZ60R017C7
厂家：	Infineon
描述：	600V CoolMOS™ C7 超级结（SJ）MOSFET 系列比 CoolMOS™ CP 系列可减少大约 50% 的关断损耗（E oss），在 PFC、TTF 及其他硬开关拓扑结构中可提供卓越的性能。另外，IPL60R185C7也是高功率密度充电器的不二之选！开关功率因数校正
文件：	总14页 (文件大小：1133K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPZ60R017C7

MOSFET

PG-TOꢀ247-4

600VꢀCoolMOSªꢀC7ꢀPowerꢀTransistor

CoolMOS™ꢀC7ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower

MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand

pioneeredꢀbyꢀInfineonꢀTechnologies.

600VꢀCoolMOS™ꢀC7ꢀseriesꢀcombinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJ

MOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.

Theꢀ600VꢀC7ꢀisꢀtheꢀfirstꢀtechnologyꢀeverꢀwithꢀR_DS(on)*Aꢀbelowꢀ1Ohm*mm².

Features

•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀ(PFCꢀandꢀhighꢀperformanceꢀLLC)

•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggednessꢀtoꢀ120V/ns

•ꢀIncreasedꢀefficiencyꢀdueꢀtoꢀbestꢀinꢀclassꢀFOMꢀR_DS(on)*E_ossꢀandꢀR_DS(on)*Q_g

•ꢀBestꢀinꢀclassꢀR_DS(on)ꢀ/package

Drain

Pin 1

•ꢀEasyꢀtoꢀuse/drive

Gate

Pin 4

•ꢀPb-freeꢀplating,ꢀhalogenꢀfreeꢀmoldꢀcompound

•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20

andꢀJESD22)

Driver

Source

Pin 3

Power

Source

Pin 2

•ꢀ4pinꢀkelvinꢀsourceꢀconcept

Benefits

•ꢀIncreasedꢀeconomiesꢀofꢀscaleꢀbyꢀuseꢀinꢀPFCꢀandꢀPWMꢀtopologiesꢀinꢀthe

application

•ꢀHigherꢀdv/dtꢀlimitꢀenablesꢀfasterꢀswitchingꢀleadingꢀtoꢀhigherꢀefficiency

•ꢀEnablingꢀhigherꢀsystemꢀefficiencyꢀbyꢀlowerꢀswitchingꢀlosses

•ꢀIncreasedꢀpowerꢀdensityꢀsolutionsꢀdueꢀtoꢀsmallerꢀpackages

•ꢀSuitableꢀforꢀapplicationsꢀsuchꢀasꢀserver,ꢀtelecomꢀandꢀsolar

•ꢀUpꢀtoꢀ0.5%ꢀbetterꢀfullꢀloadꢀefficiencyꢀ@100kHzꢀcomparedꢀtoꢀconventional

3pinꢀpackage

Applications

PFCꢀstagesꢀandꢀPWMꢀstagesꢀ(TTF,ꢀLLC)ꢀforꢀhighꢀpower/performance

SMPSꢀe.g.ꢀComputing,ꢀServer,ꢀTelecom,ꢀUPSꢀandꢀSolar.

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Q_g.typ

Value

650

Unit

mΩ

240

495

I_D,pulse

I_D,continuous@ T_j<150°C 129

E_oss@400V

µJ

Body diode di/dt

200

A/µs

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPZ60R017C7

PG-TO 247-4

60C7017

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-03-01

600VꢀCoolMOSªꢀC7ꢀPowerꢀTransistor

IPZ60R017C7

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-03-01

600VꢀCoolMOSªꢀC7ꢀPowerꢀTransistor

IPZ60R017C7

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

109

T_C=25°C

Continuous drain current¹⁾

I_D

T_C=100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

E_AR

I_AS

495

582

2.91

12.6

120

T_C=25°C

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, single pulse

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation

I_D=12.6A; V_DD=50V; see table 10

dv/dt

V_GS

P_tot

T_stg

T_j

V/ns V_DS=0...400V

-20

-30

static;

AC (f>1 Hz)

446

150

°C

T_C=25°C

Storage temperature

-55

Operating junction temperature

Mounting torque

Ncm M3 and M3.5 screws

Continuous diode forward current

Diode pulse current²⁾

I_S

109

495

T_C=25°C

I_S,pulse

V_DS=0...400V,ꢀI_SD<=12.6A,ꢀT_j=25°Cꢀꢀ

Reverse diode dv/dt³⁾

dv/dt

V/ns

see table 8

V_DS=0...400V,ꢀI_SD<=12.6A,ꢀT_j=25°Cꢀꢀ

Maximum diode commutation speed

Insulation withstand voltage

di_f/dt

200

n.a.

A/µs

see table 8

V_ISO

V_rms,ꢀT_C=25°C,ꢀt=1min

¹⁾Limited by T_{j max}

²⁾Pulse width t_plimited by T_j,max

³⁾Identical low side and high side switch

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-03-01

600VꢀCoolMOSªꢀC7ꢀPowerꢀTransistor

IPZ60R017C7

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

0.28

Thermal resistance, junction - case

R_thJC

°C/W -

Thermal resistance, junction - ambient R_thJA

°C/W leaded

Thermal resistance, junction - ambient

for SMD version

R_thJA

°C/W n.a.

Soldering temperature, wavesoldering

only allowed at leads

T_sold

260

°C

1.6mm (0.063 in.) from case for 10s

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-03-01

600VꢀCoolMOSªꢀC7ꢀPowerꢀTransistor

IPZ60R017C7

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

600

Max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_(GS)th

V_GS=0V,ꢀI_D=1mA

3.5

V_DS=V_GS,ꢀI_D=2.91mA

V_DS=600,ꢀV_GS=0V,ꢀT_j=25°C

V_DS=600,ꢀV_GS=0V,ꢀT_j=150°C

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

I_DSS

µA

Ω

I_GSS

100

V_GS=20V,ꢀV_DS=0V

0.015 0.017

0.033

V_GS=10V,ꢀI_D=58.2A,ꢀT_j=25°C

V_GS=10V,ꢀI_D=58.2A,ꢀT_j=150°C

R_DS(on)

R_G

0.45

Ω

f=1MHz,ꢀopenꢀdrain

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Input capacitance

Output capacitance

C_iss

9890

200

V_GS=0V,ꢀV_DS=400V,ꢀf=250kHz

C_oss

Effective output capacitance, energy

related¹⁾

C_o(er)

C_o(tr)

t_d(on)

t_r

375

3840

V_GS=0V,ꢀV_DS=0...400V

Effective output capacitance, time

related²⁾

I_D=constant,ꢀV_GS=0V,ꢀV_DS=0...400V

V_DD=400V,ꢀV_GS=13V,ꢀI_D=58.2A,

R_G=1.8Ω;ꢀseeꢀtableꢀ9

Turn-on delay time

Rise time

V_DD=400V,ꢀV_GS=13V,ꢀI_D=58.2A,

R_G=1.8Ω;ꢀseeꢀtableꢀ9

V_DD=400V,ꢀV_GS=13V,ꢀI_D=58.2A,

R_G=1.8Ω;ꢀseeꢀtableꢀ9

Turn-off delay time

Fall time

t_d(off)

t_f

106

V_DD=400V,ꢀV_GS=13V,ꢀI_D=58.2A,

R_G=1.8Ω;ꢀseeꢀtableꢀ9

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

V_DD=400V,ꢀI_D=58.2A,ꢀV_GS=0ꢀtoꢀ10V

Q_gd

Q_g

240

5.0

Gate plateau voltage

V_plateau

¹⁾ꢀC_o(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

²⁾ꢀC_o(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-03-01

600VꢀCoolMOSªꢀC7ꢀPowerꢀTransistor

IPZ60R017C7

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics

Values

Typ.

0.9

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Diode forward voltage

Reverse recovery time

V_SD

t_rr

V_GS=0V,ꢀI_F=58.2A,ꢀT_j=25°C

V_R=400V,ꢀI_F=58.2A,ꢀdi_F/dt=100A/µs;

see table 8

630

V_R=400V,ꢀI_F=58.2A,ꢀdi_F/dt=100A/µs;

see table 8

Reverse recovery charge

Q_rr

I_rrm

µC

V_R=400V,ꢀI_F=58.2A,ꢀdi_F/dt=100A/µs;

see table 8

Peak reverse recovery current

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-03-01

600VꢀCoolMOSªꢀC7ꢀPowerꢀTransistor

IPZ60R017C7

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams

Diagramꢀ1:ꢀPowerꢀdissipation

Diagramꢀ2:ꢀSafeꢀoperatingꢀarea

500

10³

100 µs

10 µs

1 µs

1 ms

450

400

350

300

250

200

150

100

10 ms

10²

10¹

10⁰

10^-1

10^-2

10^-3

100

125

150

10⁰

10¹

10²

10³

T_Cꢀ[°C]

V_DSꢀ[V]

P_tot=f(T_C)

I_D=f(V_DS);ꢀT_C=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance

10³

10⁰

10 µs

1 µs

100 µs

1 ms

10 ms

10²

10¹

0.5

10^-1

0.2

0.1

10⁰

10^-1

10^-2

10^-3

0.05

10^-2

0.02

0.01

single pulse

10^-3

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

V_DSꢀ[V]

t_pꢀ[s]

I_D=f(V_DS);ꢀT_C=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Z_thJCꢀ=f(t_P);ꢀparameter:ꢀD=t_p/T

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-03-01

600VꢀCoolMOSªꢀC7ꢀPowerꢀTransistor

IPZ60R017C7

Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics

Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics

800

450

20 V

10 V

400

350

300

250

200

150

100

20 V

10 V

8 V

700

600

500

400

300

200

100

8 V

7 V

6 V

7 V

5.5 V

6 V

5 V

5.5 V

4.5 V

5 V

4.5 V

V_DSꢀ[V]

I_D=f(V_DS);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

I_D=f(V_DS);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance

Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance

0.07

0.040

6 V

5.5 V

6.5 V

7 V

0.035

0.030

0.06

0.05

0.04

0.03

10 V

20 V

0.025

98%

0.020

typ

0.015

0.010

0.005

50 100 150 200 250 300 350 400 450 500

-50

-25

100

125

150

I_Dꢀ[A]

T_jꢀ[°C]

R_DS(on)=f(I_D);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

R_DS(on)=f(T_j);ꢀI_D=58.2A;ꢀV_GS=10ꢀV

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-03-01

600VꢀCoolMOSªꢀC7ꢀPowerꢀTransistor

IPZ60R017C7

Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics

Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge

800

120 V

700

25 °C

400 V

600

500

400

150 °C

300

200

100

150

200

250

300

V_GSꢀ[V]

Q_gateꢀ[nC]

I_D=f(V_GS);ꢀV_DS=20V;ꢀparameter:ꢀT_j

V_GS=f(Q_gate);ꢀI_D=58.2ꢀAꢀpulsed;ꢀparameter:ꢀV_DD

Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode

Diagramꢀ12:ꢀAvalancheꢀenergy

10³

600

550

500

450

400

350

300

250

200

150

100

10²

125 °C

25 °C

10¹

10⁰

10^-1

0.20

0.40

0.60

0.80

1.00

1.20

1.40

1.60

100

125

150

V_SDꢀ[V]

T_jꢀ[°C]

I_F=f(V_SD);ꢀparameter:ꢀT_j

E_AS=f(T_j);ꢀI_D=12.6ꢀA;ꢀV_DD=50ꢀV

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-03-01

600VꢀCoolMOSªꢀC7ꢀPowerꢀTransistor

IPZ60R017C7

Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage

Diagramꢀ14:ꢀTyp.ꢀcapacitances

700

10⁵

680

660

640

620

600

580

560

540

520

Ciss

10⁴

10³

Coss

10²

10¹

Crss

10⁰

-60

-30

120

150

100

200

300

400

T_jꢀ[°C]

V_DSꢀ[V]

V_BR(DSS)=f(T_j);ꢀI_D=1ꢀmA

C=f(V_DS);ꢀV_GS=0ꢀV;ꢀf=250ꢀkHz

Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy

100

200

300

400

V_DSꢀ[V]

E_oss=f(V_DS

)

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-03-01

600VꢀCoolMOSªꢀC7ꢀPowerꢀTransistor

IPZ60R017C7

5ꢀꢀꢀꢀꢀTestꢀCircuits

Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics

Test circuit for diode characteristics

Diode recovery waveform

V,I

V_DS

R_g1

V_DS(peak)

V_DS

t_rr

V_DS

I_F

t_F

t_S

dI_F/ dt

R_g2

I_F

10%I_rrm

I_F

dI / dt

t_rr=t_F+t_S

I_rrm

Q =Q_F+Q

R_g1 = R_g2

Tableꢀ9ꢀꢀꢀꢀꢀswitchingꢀtimesꢀ(ss)

Switching times test circuit for inductive load

Switching times waveform

V_DS

90%

10%

V_DS

V_GS

t_d(off)

t_f

t_d(on)

t_on

t_r

t_off

Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)

Unclamped inductive load test circuit

Unclamped inductive waveform

V_(BR)DS

I_D

V_DS

I_D

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-03-01

600VꢀCoolMOSªꢀC7ꢀPowerꢀTransistor

IPZ60R017C7

6ꢀꢀꢀꢀꢀPackageꢀOutlines

Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247-4

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-03-01

600VꢀCoolMOSªꢀC7ꢀPowerꢀTransistor

IPZ60R017C7

7ꢀꢀꢀꢀꢀAppendixꢀA

Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks

• IFXꢀCoolMOS^TMꢀC7ꢀWebpage:ꢀwww.infineon.com

• IFXꢀCoolMOS^TMꢀC7ꢀapplicationꢀnote:ꢀwww.infineon.com

• IFXꢀCoolMOS^TMꢀC7ꢀsimulationꢀmodel:ꢀwww.infineon.com

• IFXꢀDesignꢀtools:ꢀwww.infineon.com

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-03-01

600VꢀCoolMOSªꢀC7ꢀPowerꢀTransistor

IPZ60R017C7

RevisionꢀHistory

IPZ60R017C7

Revision:ꢀ2016-03-01,ꢀRev.ꢀ2.0

Previous Revision

Revision Date

2.0

Subjects (major changes since last revision)

Release of final version

2016-03-01

TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG

AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,

EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,

ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,

PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,

SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.

TrademarksꢀupdatedꢀAugustꢀ2015

OtherꢀTrademarks

Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.

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erratum@infineon.com

Publishedꢀby

InfineonꢀTechnologiesꢀAG

81726ꢀMünchen,ꢀGermany

AllꢀRightsꢀReserved.

LegalꢀDisclaimer

Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith

respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication

ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout

limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.

Information

Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon

TechnologiesꢀOfficeꢀ(www.infineon.com).

Warnings

Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,

pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.

TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or

automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa

failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand

aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare

intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis

reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-03-01

IPZ60R017C7 [INFINEON]

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