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IQE006NE2LM5CGSC [INFINEON]

英飞凌推出了创新型源极底置技术系列扩展的新产品， PQFN 3.3x3.3 源极底置 DSC 封装OptiMOSTM 5 25 V：IQE006NE2LM5CGSC。革命性的源极底置技术引入了倒置式硅芯片，该芯片在组件内部上下颠倒。这种调整使得源极电位（而不是漏极电位）可以通过导热垫与 PCB 连接。因此，它具有几点优势，如热能力增强，先进的功率密度，或具有改善板上布局的可能性。;

IQE006NE2LM5CGSC


型号：	IQE006NE2LM5CGSC
厂家：	Infineon
描述：	英飞凌推出了创新型源极底置技术系列扩展的新产品， PQFN 3.3x3.3 源极底置 DSC 封装OptiMOSTM 5 25 V：IQE006NE2LM5CGSC。革命性的源极底置技术引入了倒置式硅芯片，该芯片在组件内部上下颠倒。这种调整使得源极电位（而不是漏极电位）可以通过导热垫与 PCB 连接。因此，它具有几点优势，如热能力增强，先进的功率密度，或具有改善板上布局的可能性。 PC
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中文：	中文翻译
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IQE008N03LM5

IQE008N03LM5 是英飞凌对创新性源极底置技术的延伸。 OptiMOS™ 5 30V PQFN 3.3x3.3 源极底置具有 30 V 和极低 0.85 mOhm RDS(on)。革命性的源极底置技术使硅片倒置在元件内部。调整后，源极电位（而非漏极电位）即可通过导热垫连接到 PCB。这样就能提供多项优势，如增强热性能、高功率密度和改善布局。此外，更高的效率、更低的主动散热要求及有效的热管理布局有利于实现系统级优势。RDS(on) 新标杆和创新布局能力使源极底置概念在温度管理方面处于领先地位。源极底置产品组合解决了各种应用问题，包括电机驱动、电信、 SMPS 或服务器。目前，有两种不同的产品尺寸采用了这项新技术：源极底置标准栅极和源极底置置中栅极（并行优化）。

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IQE008N03LM5CG

IQE008N03LM5CG 是英飞凌对创新性源极底置技术的延伸。 OptiMOS™ 5 30 V PQFN 3.3x3.3 源极底置具有 30 V 和极低 0.85 mOhm RDS(on)。革命性的源极底置技术使硅片倒置在元件内部。调整后，源极电位（而非漏极电位）即可通过导热垫连接到 PCB。这样就能提供多项优势，如增强热性能、高功率密度和改善布局。此外，更高的效率、更低的主动散热要求及有效的热管理布局有利于实现系统级优势。RDS(on) 新标杆和创新布局能力使源极底置概念在温度管理方面处于领先地位。源极底置产品组合解决了各种应用问题，包括电机驱动、电信、 SMPS 或服务器。目前，有两种不同的产品尺寸采用了这项新技术：源极底置标准栅极和源极底置置中栅极（并行优化）。

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IQE030N06NM5CGSC

英飞凌推出了创新型源极底置技术系列扩展的新产品， PQFN 3.3x3.3 源极底置 DSC 封装OptiMOSTM 5 60 V：IQE030N06NM5CGSC。革命性的源极底置技术引入了倒置式硅芯片，该芯片在组件内部上下颠倒。这种调整使得源极电位（而不是漏极电位）可以通过导热垫与 PCB 连接。因此，它具有几点优势，如热能力增强，先进的功率密度，或具有改善板上布局的可能性。

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IQE050N08NM5CGSC

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