IQE065N10NM5SC [INFINEON]

英飞凌推出了创新型 源极底置 技术系列扩展的新产品, PQFN 3.3x3.3 源极底置 DSC 封装OptiMOSTM 5 100 V: IQE065N10NM5SC。革命性的源极底置技术引入了倒置式硅芯片,该芯片在组件内部上下颠倒。这种调整使得源极电位(而不是漏极电位)可以通过导热垫与 PCB 连接。因此,它具有几点优势,如热能力增强,先进的功率密度,或具有改善板上布局的可能性。;
IQE065N10NM5SC
型号: IQE065N10NM5SC
厂家: Infineon    Infineon
描述:

英飞凌推出了创新型 源极底置 技术系列扩展的新产品, PQFN 3.3x3.3 源极底置 DSC 封装OptiMOSTM 5 100 V: IQE065N10NM5SC。革命性的源极底置技术引入了倒置式硅芯片,该芯片在组件内部上下颠倒。这种调整使得源极电位(而不是漏极电位)可以通过导热垫与 PCB 连接。因此,它具有几点优势,如热能力增强,先进的功率密度,或具有改善板上布局的可能性。

PC
文件: 总13页 (文件大小:1646K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IQE065N10NM5SC  
MOSFET  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV  
PG-WHSON-8  
5
6
Features  
7
8
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsyncronousꢀrectification  
•ꢀN-channel  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀSuperiorꢀthermalꢀresistance  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
1
4
3
2
2
3
4
1
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Drain  
Pin 5-8  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
100  
6.5  
85  
Unit  
*1  
Gate  
Pin 4  
VDS  
V
Source  
Pin 1-3  
RDS(on),max  
ID  
m  
A
*1: Internal body diode  
Qoss  
40  
nC  
nC  
QG(0V...10V)  
34  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IQE065N10NM5SC  
PG-WHSON-8  
F
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2022-05-02  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV  
IQE065N10NM5SC  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2022-05-02  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV  
IQE065N10NM5SC  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
-
-
85  
60  
46  
13  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
Continuous drain current1)  
ID  
A
VGS=6ꢀV,ꢀTC=100ꢀ°C  
VGS=10V,ꢀTA=25°C,RthJA=60°C/W2)  
Pulsed drain current3)  
Avalanche energy, single pulse4)  
ID,pulse  
EAS  
-
-
-
-
340  
147  
20  
A
TA=25ꢀ°C  
-
mJ  
V
ID=20ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-20  
-
-
-
-
-
100  
2.5  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=60ꢀ°C/W2)  
IEC climatic category; DIN IEC 68-1:  
55/175/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
bottom  
RthJC  
RthJC  
RthJA  
-
0.8  
0.7  
-
1.5  
°C/W -  
°C/W -  
°C/W -  
Thermal resistance, junction - case,  
top  
-
-
-
Thermal resistance, junction - ambient,  
6 cm² cooling area2)  
60  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2022-05-02  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV  
IQE065N10NM5SC  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
100  
2.2  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
VDS=VGS,ꢀID=48ꢀµA  
3.0  
3.8  
-
-
0.1  
10  
1.0  
100  
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
5.7  
7.2  
6.5  
11  
VGS=10ꢀV,ꢀID=20ꢀA  
VGS=6ꢀV,ꢀID=10ꢀA  
RDS(on)  
mΩ  
Gate resistance  
RG  
gfs  
-
-
0.7  
55  
-
-
-
Transconductance  
S
|VDS|2|ID|RDS(on)max,ꢀID=20ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance1)  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
2300 3000 pF  
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz  
340  
18  
440  
32  
pF  
pF  
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
8.9  
3.8  
21.1  
7.5  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
10.1  
6.8  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge1)  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=50ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=50ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=50ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=50ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=50ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=50ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV  
Qg(th)  
Qgd  
-
7.4  
11.1  
Qsw  
10.7  
34  
-
Gate charge total1)  
Qg  
43  
-
Gate plateau voltage  
Gate charge total, sync. FET  
Output charge1)  
Vplateau  
Qg(sync)  
Qoss  
4.4  
29  
-
nC  
nC  
40  
53  
VDS=50ꢀV,ꢀVGS=0ꢀV  
1) Defined by design. Not subject to production test.  
2) See Gate charge waveformsfor parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2022-05-02  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV  
IQE065N10NM5SC  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
-
Max.  
74  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
340  
1.1  
72  
A
TC=25ꢀ°C  
Diode forward voltage  
0.83  
36  
40  
V
VGS=0ꢀV,ꢀIF=20ꢀA,ꢀTj=25ꢀ°C  
VR=50ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=50ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=100ꢀA/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
ns  
nC  
Qrr  
80  
1) Defined by design. Not subject to production test.  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2022-05-02  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV  
IQE065N10NM5SC  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
120  
100  
100  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0
25  
50  
75  
100  
125  
150  
175  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
102  
single pulse  
0.01  
1 µs  
0.02  
0.05  
0.1  
0.2  
0.5  
10 µs  
102  
101  
101  
100 µs  
100  
10-1  
10-2  
10-3  
1 ms  
100  
10 ms  
DC  
10-1  
10-2  
10-1  
100  
101  
102  
103  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2022-05-02  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV  
IQE065N10NM5SC  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
350  
20  
8 V  
10 V  
7 V  
300  
16  
4.5 V  
250  
200  
5 V  
12  
6 V  
6 V  
150  
8
4
0
7 V  
8 V  
100  
10 V  
5 V  
50  
4.5 V  
0
0
1
2
3
4
5
0
25  
50  
75  
100  
125  
150  
175  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
350  
20  
300  
250  
200  
150  
100  
50  
16  
12  
8
25 °C  
175 °C  
175 °C  
4
25 °C  
0
0
0
1
2
3
4
5
6
7
0
3
6
9
12  
15  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=20ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2022-05-02  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV  
IQE065N10NM5SC  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.4  
4.0  
3.5  
3.0  
2.5  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
480 µA  
2.0  
1.5  
1.0  
0.5  
0.0  
48 µA  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=20ꢀA,ꢀVGS=10ꢀV  
VGS(th)=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
25 °C, max  
175 °C  
175 °C, max  
Ciss  
103  
102  
101  
100  
Coss  
102  
Crss  
101  
0
20  
40  
60  
80  
100  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2022-05-02  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV  
IQE065N10NM5SC  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
20 V  
50 V  
80 V  
8
6
4
2
0
101  
25 °C  
100 °C  
150 °C  
100  
10-1  
100  
101  
102  
103  
0
5
10  
15  
20  
25  
30  
35  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=20ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
108  
106  
104  
102  
100  
98  
96  
94  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2022-05-02  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV  
IQE065N10NM5SC  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
PACKAGE - GROUP  
NUMBER:  
PG-WHSON-8-U01  
MILLIMETERS  
DIMENSIONS  
MIN.  
---  
MAX.  
0.75  
0.05  
0.40  
0.30  
3.40  
2.51  
2.25  
0.40  
3.40  
1.04  
2.23  
1.55  
A
A1  
b
0
0.20  
0.10  
3.20  
2.31  
1.95  
0.20  
3.20  
0.84  
1.93  
1.35  
c
D
D1  
D2  
D3  
E
E1  
E2  
E3  
e
0.65  
e1  
L
0.975  
0.40  
0.35  
0.77  
0.60  
0.55  
0.97  
L1  
L2  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-WHSON-8,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2022-05-02  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV  
IQE065N10NM5SC  
2.3  
0.975  
0.65  
0.35  
7×  
0.975  
0.65  
6×  
5×  
0.3  
8×  
0.95  
1
0.565  
2×  
4×  
1.2  
2×  
0.372  
0.975  
0.975  
0.08  
1.23  
0.35  
0.975  
Pin1  
2.46  
copper  
solder mask  
All dimensions are in units mm  
stencil apertures  
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀFootprintꢀ(PG-WHSON-8-1),ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2022-05-02  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV  
IQE065N10NM5SC  
3.6  
12  
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀTapeꢀ(PG-WHSON-8-1),ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
12  
Rev.ꢀ2.0,ꢀꢀ2022-05-02  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV  
IQE065N10NM5SC  
RevisionꢀHistory  
IQE065N10NM5SC  
Revision:ꢀ2022-05-02,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2022-05-02  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2022ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
13  
Rev.ꢀ2.0,ꢀꢀ2022-05-02  

相关型号:

iQE24009A120V-001-R

96 - 204W Quarter Brick Converter
TDK

iQE24024A050V-001-R

96 - 204W Quarter Brick Converter
TDK

iQE48010A150V-001-R

DC-DC开关电源
TDK

iQE48010A150V-007-R

96 - 204W Quarter Brick Converter
TDK

iQE48017A120V-000-R

DC-DC开关电源
TDK

iQE48017A120V-001-R

96 - 204W Quarter Brick Converter
TDK

iQE48017A120V-007-R

DC-DC开关电源
TDK

iQE48030A050V-000-R

DC-DC开关电源
TDK

iQE48030A050V-001-R

96 - 204W Quarter Brick Converter
TDK

iQE48040A033V-001-R

96 - 204W Quarter Brick Converter
TDK

iQE4W011A120V-001-R

96 - 204W Quarter Brick Converter
TDK

IQESERIES

96 - 204W Quarter Brick Converter
TDK