IR110BG12DCB [INFINEON]
Silicon Controlled Rectifier, 1200V V(RRM), 1 Element, 4 INCH, WAFER;
| 型号： | IR110BG12DCB |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 1200V V(RRM), 1 Element, 4 INCH, WAFER 栅 栅极 |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0101J 12/01
IR110BG12DCB
PHASE CONTROL THYRISTORS
Junction Size:
Square 110 mils
Wafer Size:
4"
VRRM Class:
1200 V
Passivation Process:
Reference IR Packaged Part:
Glassivated MESA
16TTS Series
Major Ratings and Characteristics
Parameters
Units
1.4V
Test Conditions
VTM
MaximumOn-stateVoltage
TJ = 25°C, IT = 10 A
VRRM ReverseBreakdownVoltage
1200V
60 mA
2 V
TJ = 25°C, IRRM = 100 µA
(1)
IGT
VGT
IH
Max. Required DC Gate Current to Trigger
Max. Required DC Gate Voltage to Trigger
HoldingCurrentRange
TJ =25°C,anodesupply=6V,resistiveload
TJ =25°C,anodesupply=6V,resistiveload
5 to 100 mA Anodesupply=6V, resistiveload
IL
Maximum Latching Current
200 mA
Anodesupply=6V, resistiveload
(1) Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al, (20µm)
Nominal Front Metal Composition, Thickness
ChipDimensions
110 x 110 mils (see drawing)
100 mm, with std. <110> flat
350 µm ± 10 µm
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
130 µm
Reject Ink Dot Size
0.25 mm diameter minimum
Seedrawing
InkDotLocation
RecommendedStorageEnvironment
Storageinoriginalcontainer, indessicated
nitrogen,withnocontamination
www.irf.com
1
IR110BG12DCB
Bulletin I0101J 12/01
Ordering Information Table
Device Code
IR 110
B
G
12
D
CB
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: B = Wire Bondable SCR
Passivation Process: G = Glassivated MESA
Voltage code: Code x 100 = VRRM
Metallization: D = Silver (Anode) - Aluminium (Cathode)
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in millimeters
2
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