IR135LM06CS02 [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER;
| 型号： | IR135LM06CS02 |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER 快速恢复二极管 |
| 文件： | 总3页 (文件大小：16K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet I0127J 09/97
IR135LM06CS02CB
FAST RECOVERY DIODE
Junction Size:
Wafer Size:
Rectangular 135 x 100 mils
4"
VRRM Class:
600 V
Passivation Process:
Glassivated MOAT
Reference IR Packaged Part: 8EWF..S Series
Major Ratings and Characteristics
Parameters
Units
1.2V
TestConditions
VFM
VRRM Reverse Breakdown Voltage
Reverse RecoveryTime
Maximum Forward Voltage
TJ =25°C, IF =8A
600V
55ns
TJ = 25°C, IRRM = 100 µA
(1)
t
TJ =25°C, IF=1A, -di/dt=100A/µs
rr
(1)Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al, (20 µm)
Nominal Front Metal Composition, Thickness
Chip Dimensions
135x100mils(seedrawing)
Wafer Diameter
Wafer Thickness
100 mm, with std. < 110 > flat
300 µm, ± 10 µm
Maximum Width of Sawing Line
Reject Ink Dot Size
45 µm
0.25 mm diameter minimum
Seedrawing
Ink Dot Location
Recommended Storage Environment
Storage in original container, in dessicated
nitrogen,withnocontamination
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1
IR135LM06CS02CB
Preliminary Data Sheet I0127J 09/97
Ordering Information Table
Device Code
IR 135
L
M
06
C
S02 CB
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: L = Wire Bondable Fast Recovery Diode
Passivation Process: M = Glassivated MOAT
Voltage code: Code x 100 = VRRM
Metallization: C = Aluminium (Anode) - Silver (Cathode)
t
code: S02 = 55 nsec 6
rr
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in microns (mils)
2
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IR135LM06CS02CB
Preliminary Data Sheet I0127J 09/97
Wafer Layout
TOP VIEW
N° 735 Basic Cells
All dimensions are in millimeters
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3
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