IR155DM16CPBF [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 1600V V(RRM), Silicon, DIE;
| 型号： | IR155DM16CPBF |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1600V V(RRM), Silicon, DIE 二极管 |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet I0146J 02/02
IR155DM16CCB SERIES
STANDARD RECOVERY DIODES
Junction Size:
Wafer Size:
Square 155 mils
4"
VRRM Class:
1600 V
Passivation Process:
Glassivated MOAT
Reference IR Packaged Part: 15ETS Series
Major Ratings and Characteristics
Parameters
Units
TestConditions
VFM
MaximumForwardVoltage
1100 mV
TJ = Amb., IF = 15 A
VRRM ReverseBreakdownVoltageRange
1600 V (*)
TJ = Amb., IRRM = 50 µA
(**)
(*) Wafer and die Probe test clamped at 1200V to limit arcing. 1600V BV testable only in encapsulated packages
(**) Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
ChipDimensions
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al, (20 µm)
155 x 155 mils (see drawing)
100 mm, with std. < 110 > flat
330 µm, ± 10 µm
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
110 µm
Reject Ink Dot Size
0.25 mm diameter minimum
Seedrawing
InkDotLocation
RecommendedStorageEnvironment
Storageinoriginalcontainer, indessicated
nitrogen,withnocontamination
1
IR155DM16CCB Series
Preliminary Data Sheet I0146J 02/02
Ordering Information Table
Device Code
IR 155
D
M
16
C
CB
3
4
5
7
1
2
6
1
2
3
4
5
6
7
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: D = Wire Bondable Standard Recovery Diode
Passivation Process: M = Glassivated MOAT
Voltage code: Code x 100 = VRRM
Metallization: C = Aluminium (Anode) - Silver (Cathode)
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in microns (mils)
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