IR207DM16CCB [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 1600V V(RRM), Silicon, WAFER;
| 型号： | IR207DM16CCB |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1600V V(RRM), Silicon, WAFER 二极管 |
| 文件： | 总3页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0140J 09/00
IR207DM16CCB
STANDARD RECOVERY DIODES
Junction Size:
Rectangular 207 x 157 mils
Wafer Size:
4"
VRRM Class:
1600 V
Passivation Process:
Reference IR Packaged Part:
Glassivated MOAT
20ETS Series
Major Ratings and Characteristics
Parameters
Units
TestConditions
VFM
MaximumForwardVoltage
1.15V
TJ = 25°C, IF = 20 A
VRRM ReverseBreakdownVoltage
1600 V (**)
TJ = 25°C, IRRM = 100 µA
(*)
(*) Nitrogen flow on die edge.
(**)WaferanddieProbetestclampedat1200Vtolimitarcing.1600V BVtestable only in encapsulated packages
Mechanical Characteristics
NominalBackMetalComposition, Thickness
NominalFrontMetalComposition, Thickness
ChipDimensions
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al, (20 µm)
207 x 157 mils (see drawing)
100 mm, with std. < 110 > flat
330 µm, ± 10 µm
WaferDiameter
WaferThickness
MaximumWidthofSawingLine
45 µm
Reject Ink Dot Size
0.25mmdiameterminimum
Seedrawing
InkDotLocation
RecommendedStorageEnvironment
Storageinoriginalcontainer, indessicated
nitrogen,withnocontamination
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IR207DM16CCB
Bulletin I0140J 09/00
Ordering Information Table
Device Code
IR 207
D
M
16
C
CB
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: D = Wire Bondable Standard Recovery Diode
Passivation Process: M = Glassivated MOAT
Voltage code: Code x 100 = VRRM
Metallization: C = Aluminium (Anode) - Silver (Cathode)
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in microns (mils)
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IR207DM16CCB
Bulletin I0140J 09/00
Wafer Layout
TOP VIEW
N° 304 Basic Cells
All dimensions are in millimeters
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