IR21044PBF [INFINEON]
Half Bridge Based MOSFET Driver, 0.27A, CMOS, PDIP14, PLASTIC, DIP-14;
| 型号： | IR21044PBF |
| 厂家： | 
Infineon |
| 描述： | Half Bridge Based MOSFET Driver, 0.27A, CMOS, PDIP14, PLASTIC, DIP-14 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总15页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD60046-L
IR2104/IR21044
HIGH AND LOW SIDE DRIVER
Features
Product Summary
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
5V Schmitt-triggered input logic
Cross-conduction prevention logic
Internally set deadtime
High side output in phase with input
Shut down input turns off both channels
Matched propagation delay for both channels
•
V
600V max.
130 mA / 270 mA
10 - 20V
OFFSET
I +/-
O
•
•
V
OUT
•
•
•
•
•
•
t
(typ.)
680 & 150 ns
520 ns
on/off
Deadtime (typ.)
Packages
Description
The IR2104/IR21044 are high voltage, high speed
power MOSFET and IGBT drivers with dependent high
and low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output. The
output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configura-
tion which operates from 10 to 600 volts.
8 Lead SOIC
IR2104S
14 Lead SOIC
IR21044S
8 Lead PDIP
IR2104
14 Lead PDIP
IR21044
Typical Connection
up to 600V
VCC
VCC
IN
VB
HO
VS
IN
TO
LOAD
SD
SD
COM
LO
IR2104/IR21044
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
Definition
High side floating absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Min.
Max.
Units
V
B
-0.3
625
V
S
V
- 25
V
B
+ 0.3
+ 0.3
25
B
V
HO
V
S
- 0.3
V
B
V
V
CC
-0.3
-0.3
-0.3
—
V
LO
V
+ 0.3
+ 0.3
CC
V
IN
Logic input voltage (IN &
)
V
CC
SD
dV /dt
s
Allowable offset supply voltage transient
50
V/ns
P
Package power dissipation @ T ≤ +25°C
(8 lead PDIP)
(8 lead SOIC)
(14 lead PDIP)
(14 lead SOIC)
(8 lead PDIP)
(8 lead SOIC)
(14 lead PDIP)
(14 lead SOIC)
—
1.0
0.625
1.6
D
A
—
W
—
—
1.0
Rth
Thermal resistance, junction to ambient
—
125
200
75
JA
—
°C/W
°C
—
—
120
150
150
300
T
Junction temperature
—
J
T
Storage temperature
-55
—
S
L
T
Lead temperature (soldering, 10 seconds)
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V offset rating is tested with all supplies biased at 15V differential.
S
Symbol
Definition
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Min.
Max.
Units
V
B
V
S
+ 10
V + 20
S
V
S
Note 1
600
V
HO
V
S
V
B
V
V
CC
10
0
20
V
LO
V
CC
V
IN
Logic input voltage (IN & SD)
0
V
CC
°C
T
Ambient temperature
-40
125
A
Note 1: Logic operational for V of -5 to +600V. Logic state held for V of -5V to -V
BS
.
S
S
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2
IR2104/IR21044
Dynamic Electrical Characteristics
V
(V , V ) = 15V, C = 1000 pF and T = 25°C unless otherwise specified.
BIAS CC BS L A
Symbol
Definition
Min. Typ. Max. Units Test Conditions
t
Turn-on propagation delay
Turn-off propagation delay
Shutdown propagation delay
Turn-on rise time
—
680
150
160
100
50
820
220
220
170
90
V = 0V
S
on
off
t
—
V
S
= 600V
t
—
sd
t
—
ns
r
t
f
Turn-off fall time
—
DT
Deadtime, LS turn-off to HS turn-on &
HS turn-on to LS turn-off
400
520
650
MT
Delay matching, HS & LS turn-on/off
—
—
60
Static Electrical Characteristics
V
(V , V ) = 15V and T = 25°C unless otherwise specified. The V , V and I parameters are referenced to
BIAS CC BS A IN TH IN
COM. The V and I parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
O
O
Symbol
Definition
Min. Typ. Max. Units Test Conditions
V
Logic “1” (HO) & Logic “0” (LO) input voltage
Logic “0” (HO) & Logic “1” (LO) input voltage
SD input positive going threshold
3
—
—
—
—
—
—
—
30
150
3
—
0.8
—
V
V
V
V
= 10V to 20V
= 10V to 20V
= 10V to 20V
= 10V to 20V
IH
CC
CC
CC
CC
V
—
3
IL
SD,TH+
V
V
V
SD input negative going threshold
—
—
—
—
—
—
—
—
8
0.8
100
100
50
SD,TH-
V
OH
High level output voltage, V
- V
I
O
I
O
= 0A
= 0A
BIAS
O
mV
V
Low level output voltage, V
O
OL
LK
I
Offset supply leakage current
Quiescent V supply current
V = V = 600V
B S
I
55
V
= 0V or 5V
= 0V or 5V
QBS
BS
IN
IN
µA
I
Quiescent V supply current
CC
270
10
V
QCC
I
Logic “1” input bias current
Logic “0” input bias current
V
= 5V
= 0V
IN+
IN
IN
I
IN-
—
8.9
1
V
V
V
CC
supply undervoltage positive going
9.8
CCUV+
threshold
supply undervoltage negative going
V
V
V
CC
7.4
130
270
8.2
210
360
9
CCUV-
threshold
I
Output high short circuit pulsed current
—
—
V
O
= 0V
O+
PW ≤ 10 µs
= 15V
mA
I
O-
Output low short circuit pulsed current
V
O
PW ≤ 10 µs
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3
IR2104/IR21044
Functional Block Diagram
VB
Q
HV
LEVEL
SHIFT
R
S
HO
PULSE
FILTER
DEAD
TIME
IN
PULSE
GEN
VS
UV
DETECT
VCC
SD
LO
DEAD
TIME
COM
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4
IR2104/IR21044
Lead Definitions
Symbol Description
IN
Logic input for high and low side gate driver outputs (HO and LO), in phase with HO
Logic input for shutdown
High side floating supply
High side gate drive output
High side floating supply return
Low side and logic fixed supply
Low side gate drive output
Low side return
SD
V
B
HO
V
V
S
CC
LO
COM
Lead Assignments
V
V
1
2
3
4
V
CC
B
8
7
1
2
3
4
V
CC
B
8
7
HO
HO
IN
IN
V
S
V
S
SD
6
5
SD
6
5
LO
LO
COM
COM
8 Lead PDIP
8 Lead SOIC
IR2104
IR2104S
14
13
12
11
10
9
14
13
12
11
10
9
1
1
2
3
4
5
6
7
2
3
4
5
6
7
V
CC
V
CC
V
V
IN
B
IN
B
HO
HO
SD
COM
LO
SD
V
S
V
S
COM
LO
8
8
14 Lead PDIP
14 Lead SOIC
IR21044
IR21044S
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5
IR2104/IR21044
8 Lead PDIP
01-3003 01
8 Lead SOIC
01-0021 08
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6
IR2104/IR21044
14 Lead PDIP
01-3002 03
14 Lead SOIC (narrow body)
01-3063 00
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7
IR2104/IR21044
IN
IN(LO)
50%
50%
t
SD
IN(HO)
t
t
t
f
on
off
r
90%
90%
HO
LO
LO
HO
10%
10%
Figure 1. Input/Output Timing Diagram
Figure 2. Switching Time Waveform Definitions
50%
50%
SD
IN
50%
90%
t
sd
HO
LO
90%
10%
HO
LO
DT
90%
DT
Figure 3. Shutdown Waveform Definitions
10%
Figure 4. Deadtime Waveform Definitions
IN(LO)
50%
50%
IN(HO)
LO
HO
10%
MT
MT
90%
LO
HO
Figure 5. Delay Matching Waveform Definitions
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IR2104/IR21044
1400
1200
1000
800
600
400
200
0
1400
1200
1000
800
600
400
200
0
Max.
Typ.
Max.
Typ.
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
Temperature (°C)
VBIAS Supply Voltage (V)
Figure 6A. Turn-On Time vs Temperature
Figure 6B. Turn-On Time vs Voltage
500
400
300
500
400
300
200
100
0
Max.
Typ.
Max .
Ty p.
200
100
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (°C)
VBIAS Supply Voltage (V)
Figure 7A. Turn-Off Time vs Temperature
Figure 7B. Turn-Off Time vs Voltage
500
400
300
500
400
300
200
100
0
Max.
Typ.
Max.
200
100
Ty p.
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (°C)
VBIAS Supply Voltage (V)
Figure 8A. Shutdown Time vs Temperature
Figure 8B. Shutdown Time vs Voltage
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IR2104/IR21044
500
400
300
200
500
400
300
200
100
0
Max.
Ty p.
Max
.
100
0
Ty p.
-25
10
12
14
16
18
20
-50
0
25
50
75
100
125
Temperature (°C)
VBIAS Supply Voltage (V)
Figure 9A. Turn-On Rise Time
vs Temperature
Figure 9B. Turn-On Rise Time vs Voltage
200
200
150
100
50
150
100
50
Max .
Ty p.
Max
.
Typ.
0
0
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
VBIAS Supply Voltage (V)
Temperature (°C)
Figure 10B. Turn-Off Fall Time vs Voltage
Figure 10A. Turn-Off Fall Time
vs Temperature
1400
1200
1000
800
600
400
200
0
1400
1200
1000
800
600
400
200
0
Max .
Max .
Ty p.
Min.
Typ.
Min.
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (°C)
VBIAS Supply Voltage (V)
Figure 11A. Deadtime vs Temperature
Figure 11B. Deadtime vs Voltage
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IR2104/IR21044
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
Min.
Min.
2
1
0
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
Vcc Supply Voltage (V)
Temperature (°C)
Figure 12A. Logic "1" (HO) & Logic “0” (LO)
& Inactive SD Input Voltage
vs Temperature
Figure 12B. Logic "1" (HO) & Logic “0” (LO)
& Inactive SD Input Voltage
vs Voltage
4
3.2
2.4
1.6
4
3.2
2.4
1.6
.
Max
Max .
0.8
0.8
0
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Vcc Supply Voltage (V)
Temperature (°C)
Figure 13B. Logic "0" (HO) & Logic “1” (LO)
& Active SD Input Voltage
vs Voltage
Figure 13A. Logic "0" (HO) & Logic “1” (LO)
& Active SD Input Voltage
vs Temperature
1
0.8
0.6
0.4
1
0.8
0.6
0.4
Max .
0.2
Max.
0.2
0
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Vcc Supply Voltage (V)
Temperature (°C)
Figure 14B. High Level Output vs Voltage
Figure 14A. High Level Output
vs Temperature
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IR2104/IR21044
1
0.8
0.6
0.4
1
0 .8
0 .6
0 .4
0 .2
0
0.2
Max .
Max .
0
1 0
1 2
1 4
1 6
1 8
2 0
-50
-25
0
25
50
75
100
125
125
125
Vcc Supply Voltage (V)
Temperature (°C)
Figure 15B. Low level Output vs Voltage
Figure 15A. Low Level Output
vs Temperature
500
400
300
200
100
0
500
400
300
200
100
Max.
Max.
0
-50
-25
0
25
50
75
100
0
100
200
300
400
500
600
VB Boost Voltage (V)
Temperature (°C)
Figure 16B. Offset Supply Current
vs Voltage
Figure 16A. Offset Supply Current
vs Temperature
150
120
90
150
120
90
60
30
0
60
Max .
Ty p.
Max.
Typ.
30
0
-50
-25
0
25
50
75
100
10
12
14
16
18
20
Temperature (°C)
VBS Floating Supply Voltage (V)
Figure 17A. VBS Supply Current
vs Temperature
Figure 17B. VBS Supply Current
vs Voltage
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IR2104/IR21044
700
600
500
400
300
200
100
0
700
600
500
400
300
200
100
0
Max .
Typ.
Max.
Ty p.
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (°C)
Vcc Supply Voltage (V)
Figure 18A. Vcc Supply Current
vs Temperature
Figure 18B. Vcc Supply Current vs Voltage
30
25
20
15
10
5
30
25
20
15
10
5
Max.
Ty p.
Max .
Ty p.
0
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (°C)
Vcc Supply Voltage (V)
Figure 19A. Logic"1" Input Current
vs Temperature
Figure 19B. Logic"1" Input Current
vs Voltage
5
4
3
2
1
0
5
4
3
2
1
0
Max.
Max.
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
VCC Supply Voltage (V)
Temperature (°C)
Figure 20A. Logic "0" Input Current
vs Temperature
Figure 20B. Logic "0" Input Current
vs Voltage
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IR2104/IR21044
11
11
10
9
Max .
10
Max.
Typ.
Ty p.
9
Min.
8
8
7
6
7
Min.
6
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Temperature (°C)
Temperature (°C)
Figure 21A. Vcc Undervoltage Threshold(+)
vs Temperature
Figure 21B. Vcc Undervoltage Threshold(-)
vs Temperature
500
400
500
400
300
Typ.
300
200
200
Typ.
100 Min.
0
100
Min.
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (°C)
VBIAS Supply Voltage (V)
Figure 22B. Output Source Current
vs Voltage
Figure 22A. Output Source Current
vs Temperature
700
600
500
400
700
600
500
400
300
200
100
0
Ty p.
Min.
Typ.
Min.
300
200
100
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
VBIAS Supply Voltage (V)
Temperature (°C)
Figure 23A. Output Sink Current
vs Temperature
Figure 23B. Output Sink Current vs Voltage
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IR2104/IR21044
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom
Tel: ++ 44 (0) 20 8645 8000
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086
IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon
Hong Kong Tel: (852) 2803-7380
Data and specifications subject to change without notice. 10/18/2000
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15
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